Photogating-driven enhanced responsivity in a few-layered ReSe<sub>2</sub> phototransistor

Patil, Prasanna; Wasala, Milinda; Alkhaldi, Rana; Weber, Lincoln; Kovi, Kiran Kumar; Chakrabarti, Bhaswar; Nash, Jawnaye; Rhodes, Daniel; Rosenmann, Daniel; Divan, Ralu; Sumant, Anirudha V.; Balicas, Luis; Pradhan, Nihar; Talapatra, Saikat

doi:10.1039/d1tc01973b

Cited by 12 publications

(12 citation statements)

References 42 publications

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“…It can be seen from Figure that the V t is decreased obviously with the increase in illumination. Also, the maximal photoresponsivities of RB1 and R1 can reach 1.24 × 10 6 and 6.74 × 10 6 A/W, respectively, under the lowest optical power density of 0.47 μW/cm 2 , which far exceeds other similar phototransistors based on the TMDCs. ,− Due to the higher photoresponsivity, the D * values of RB1 and R1 respectively reach 1.9 × 10 13 and 4.8 × 10 13 Jones under the lowest optical power density of 0.47 μW/cm 2 . It can be seen from Table that phototransistors based on the ReS 2 channel in this work acquire the maximal photoresponsivity in most TMDC phototransistors.…”

Section: Resultsmentioning

confidence: 91%

ReS₂ Nanosheet-Based Channels for Two-Dimensional Field Effect Transistors and Phototransistors with High Photoresponsivity

Jia

Dong

et al. 2022

ACS Appl. Nano Mater.

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Compared to traditional bulk materials, two-dimensional transition metal dichalcogenides (2D TMDCs) hold the potential in low power logic, photoelectric, and nonvolatile memory devices due to a tunable band structure, pure heterojunction interface, and photodetection for a wide spectral range. ReS 2 is chosen as the channel material in our work because it possesses excellent photoresponsivity. In addition, a BN dielectric is inserted between SiO 2 and ReS 2 as a gate dielectric. The pure heterojunction interface at BN/ReS 2 enhances the electric characteristics, including negligible hysteresis window and higher mobility. The photoelectric measurement results show that ReS 2 devices with or without the BN dielectric have an outstanding photoresponsivity of up to ∼10 6 A/W and a specific detectivity of up to ∼10 13 Jones as well as a fast photoresponse time of less than 100 ms under an extremely low optical power density of 0.47 μW/cm 2 , which fully proves that ReS 2 has the ability to detect very weak light. Also, the contact resistance and Schottky barrier height are also extracted with variable temperature measurements for the ReS 2 device. The higher contact resistance and unsymmetric output currents illustrate that the mirror force is the main factor leading to the reduction of the Schottky barrier height. Finally, the influences of the ReS 2 channel thickness on mobility and photoresponsivity are also studied by the device-to-device variability. The work in this paper further demonstrates that nanosheet-based ReS 2 can be regarded as an excellent candidate for application into the field of light-sensitive sensors under the condition of the CMOS-compatible process.

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Section: Resultsmentioning

confidence: 91%

ReS₂ Nanosheet-Based Channels for Two-Dimensional Field Effect Transistors and Phototransistors with High Photoresponsivity

Jia

Dong

et al. 2022

ACS Appl. Nano Mater.

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“…The EQE and responsivity (R) spectra of optimal dual-band PM-PPDs were investigated under different forward and reverse bias to further explore the photoresponse performance, as shown in Figure 5a,b. The R of optimal dual-band PM-PPDs can be obtained from following Equation (2): [37,38]…”

Section: Resultsmentioning

confidence: 99%

“…The EQE and responsivity ( R ) spectra of optimal dual‐band PM‐PPDs were investigated under different forward and reverse bias to further explore the photoresponse performance, as shown in Figure a,b. The R of optimal dual‐band PM‐PPDs can be obtained from following Equation (): [ 37,38 ]

\begin{equation}R = \frac{\lambda }{{1240}}EQE\ \left( \lambda \right)\end{equation}

where λ is the wavelength of the incident light. The EQE values of optimal dual‐band PM‐PPDs are improved from 2800% to 13 000% at 350 nm with forward bias increased from +10 to +16 V, accompanied by the R improved from 8.1 to 37.2 A W −1 .…”

Section: Resultsmentioning

confidence: 99%

Highly Sensitive Dual‐Band Switchable between Ultraviolet and Visible Region Photomultiplication Type Polymer Photodetectors

Yang

Wang

Zhao

et al. 2022

Advanced Physics Research

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Dual‐band photomultiplication type polymer photodetectors (PM‐PPDs) are achieved with the structure of ITO/PDIN/poly[N,N′‐bis(4‐butylphenyl)‐N,N′‐bis(phenyl)benzidine] (poly‐TPD):2,2′‐((2Z,2′Z‐(12,13‐bis(2‐ethylhexyl)‐3,9‐diundecyl‐12,13‐dihydro‐[1,2,5]thiadiazolo[3,4‐e]thieno[2′′,3′′:4′,5′]thieno‐[2′,3′:4,5] pyrrolo‐[3,2‐g]thieno[2′,3′:4,5]thieno[3,2‐b]indole‐2,10‐diyl)bis‐(methanylylidene)) bis‐(5,6‐difluoro‐3‐oxo‐2,3‐dihydro‐1H‐indene‐2,1‐diylidene))‐dimalononitrile (Y6) (100:2, wt/wt)/MoO3/poly(3‐hexylthiophene) (P3HT):[6,6]‐phenyl‐C71‐butyric acid methyl ester (PC71BM) (100:2, wt/wt)/Al. Electron traps can be formed with Y6 surrounded by poly‐TPD or with PC71BM surrounded by P3HT. Trapped electrons near ITO/PDIN or Al electrode can assist hole tunneling injectionunder forward or reverse bias, respectively. The dual‐band PM‐PPDs exhibit ultraviolet spectral response under forward bias dependent on trapped electron distribution near ITO/PDIN electrode, while presenting visible spectral response under reverse bias determined by trapped electron distribution near Al electrode. The performance of dual‐band PM‐PPDs can be optimized by decreasing P3HT:PC71BM layer thickness. The optimal dual‐band PM‐PPDs exhibit external quantum efficiency (EQE) of 2800% at 350 nm under +10 V bias with full‐width at half‐maximum of 80 nm, while achieving EQE of 7500% at 430 nm under −10 V bias. The EQE values of optimal dual‐band PM‐PPDs are markedly improved by raising bias, reaching 13 000% at 350 nm under +16 V bias and 27 000% at 430 nm under −16 V bias. This work provides an effective method to prepare dual‐band PM‐PPDs by manipulating the interfacial trapped electron distribution.

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“…[8,295,296] The photogating effect, which can be perceived if the photocurrent varies sublinearly with the incident optical power, has also been reported in few-layer ReX 2 FETs and its origin is related to the presence of trap states. [267,297] In general, bulk traps contribute to the photogating effect in photodetectors. [281,290] Based on a trap-mediated model, the life time of photocarriers and the gain in few layer ReS 2 photodetector have been estimated to have values of 40 ms and 5 × 10 4 , respectively.…”

Section: Recent Advances In Res 2 Based Photodetectorsmentioning

confidence: 99%

“…The gate bias can be used as a parameter to switch the dominant photocarrier generation mechanism between photogating and photoconductive. [67,281,297] The gate control permits the ReS 2 photodetectors to operate at very high speeds (with response time < 20 µs) under high modulation frequencies. [281] The bolometric effect that relies on light-induced heating in a material followed by change in conductance has been exploited to devise a broad spectral ReS 2 photodetector.…”

Section: Recent Advances In Res 2 Based Photodetectorsmentioning

confidence: 99%

2D Rhenium Dichalcogenides: From Fundamental Properties to Recent Advances in Photodetector Technology

Satheesh

Jang

Pandit

et al. 2023

Adv Funct Materials

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PbS, HgCdTe, etc. [4] These materials are currently dominating the industry due to their mature technology readiness level. The high stiffness of these materials in bulk crystal or epitaxial layer form has prompted interest on low-dimensional materials for flexible photodetectors, an emerging prospective toward wearable electronics. [5,6] In order to meet with the speediness at which the present electronics industry is evolving, photodetectors featuring diverse functionalities with excellent figures of merits (high photo gain, ultrafast photoresponse, broad spectral selectivity) and facile integration with existing universal platforms like complementary metal-oxide semiconductor (CMOS) and silicon photonics, are highly desired. [7][8][9] Given the atomically thin nature, strong light-matter coupling, ultrafast carrier dynamics, flexibility, dangling bond free surface, and effective property manipulation by artificial stacking of different layered materials one over the other (called vdW stacking) without the restraints of lattice matching, 2D materials stand out as promising candidates for high performance photodetectors. During the past one decade, several 2D materials have witnessed a remarkable journey in this arena and have been the topic of several review articles. [10][11][12][13][14][15][16][17][18][19] The nearly constant light absorption in the entire electromagnetic spectrum witnessed in graphene due to gapless energy-momentum dispersion has permitted realization of first 2D material based photodetectors operating over a broad spectral range from UV to terahertz limit. [20][21][22][23] Furthermore, the high carrier mobility and associated ultrafast carrier dynamics in graphene enabled extremely fast photodetection, [24] which has been found beneficial to process images faster than existing photodetectors. [25,26] Meanwhile, layered transition metal dichalcogenides (TMDs), represented generically as MX 2 , where M is a transition metal element of groups 4-10 and X is a chalcogen atom (S, Se, Te), have become more popular due to their exotic electronic and optical properties. [27][28][29][30] In contrast to graphene, most sulfides-and selenides-based Group VI and Group VII TMDs (MoS 2 , WS 2 , ReS 2 , MoSe 2 , WSe 2 , ReSe 2 ) have a band gap covering the visible-near infrared spectral range. [31,32] For instance, the most extensively studied Group VI TMDs such as MoS 2 and WS 2 at monolayer thickness limit are direct bandgap

show abstract

Photogating-driven enhanced responsivity in a few-layered ReSe₂ phototransistor

Abstract: A wide variety of two-dimensional (2D) metal dichalcogenide compounds have recently attracted much research interest due to their very high photoresponsivities (R) making them excellent candidates for optoelectronic applications. High...

Cited by 12 publications

References 42 publications

ReS₂ Nanosheet-Based Channels for Two-Dimensional Field Effect Transistors and Phototransistors with High Photoresponsivity

ReS₂ Nanosheet-Based Channels for Two-Dimensional Field Effect Transistors and Phototransistors with High Photoresponsivity

Highly Sensitive Dual‐Band Switchable between Ultraviolet and Visible Region Photomultiplication Type Polymer Photodetectors

2D Rhenium Dichalcogenides: From Fundamental Properties to Recent Advances in Photodetector Technology

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Photogating-driven enhanced responsivity in a few-layered ReSe2 phototransistor

Abstract: A wide variety of two-dimensional (2D) metal dichalcogenide compounds have recently attracted much research interest due to their very high photoresponsivities (R) making them excellent candidates for optoelectronic applications. High...

Cited by 12 publications

References 42 publications

ReS2 Nanosheet-Based Channels for Two-Dimensional Field Effect Transistors and Phototransistors with High Photoresponsivity

ReS2 Nanosheet-Based Channels for Two-Dimensional Field Effect Transistors and Phototransistors with High Photoresponsivity

Highly Sensitive Dual‐Band Switchable between Ultraviolet and Visible Region Photomultiplication Type Polymer Photodetectors

2D Rhenium Dichalcogenides: From Fundamental Properties to Recent Advances in Photodetector Technology

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Resources

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Photogating-driven enhanced responsivity in a few-layered ReSe₂ phototransistor

ReS₂ Nanosheet-Based Channels for Two-Dimensional Field Effect Transistors and Phototransistors with High Photoresponsivity

ReS₂ Nanosheet-Based Channels for Two-Dimensional Field Effect Transistors and Phototransistors with High Photoresponsivity