Articles you may be interested inImproved metal-insulator-transition characteristics of ultrathin VO2 epitaxial films by optimized surface preparation of rutile TiO2 substrates Appl. Phys. Lett.Comprehensive study of the metal-insulator transition in pulsed laser deposited epitaxial VO2 thin films Increased metal-insulator transition temperatures in epitaxial thin films of V 2 O 3 prepared in reduced oxygen environments Appl. Phys. Lett. 98, 152105 (2011); 10.1063/1.3574910 Metal-insulator transition in epitaxial V 1 − x W x O 2 ( 0 ≤ x ≤ 0.33 ) thin films Appl. Phys. Lett. 96, 022102 (2010);Experimental observation of metal-insulator transition in epitaxial films of vanadium dioxide is reported. Hemispherical angle-resolved light scattering technique is applied for statistical analysis of the phase transition processes on mesoscale. It is shown that the thermal hysteresis strongly depends on spatial frequency of surface irregularities. The transformation of scattering indicatrix depends on sample morphology and is principally different for the thin films with higher internal elastic strain and for the thicker films where this strain is suppressed by introduction of misfit dislocations. The evolution of scattering indicatrix, fractal dimension, surface power spectral density, and surface autocorrelation function demonstrates distinctive behavior which elucidates the influence of structural defects and strain on thermal hysteresis, twinning of microcrystallites, and domain formation during the phase transition. V C 2015 AIP Publishing LLC.