1992
DOI: 10.12693/aphyspola.81.405
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Photoinduced Phenomena in Sulphur Crystals and Films

Abstract: The irradiation of sulphur crystals and films with ułtraviolet light induces the change of transmission in the visible part of spectra. It was found that these phenomena exist onły at low temperatures (4.2-50 K). The behaviour of optical transparency as a function of time after switching the rumination off was investigated. These dependences are essentially different for the films and crystals. In order to understand the origin of these phenomena the structural investigation was conducted. Very unusual behavio… Show more

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Cited by 4 publications
(7 citation statements)
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“…All investigated crystals, regardless of х , are high‐resistant materials with p ‐type conductivity according to the sign of thermo‐EMF coefficient. The hole‐originated conductivity for the Tl 1–x In 1–x Sn x S 2 crystals may be caused by the acceptor origin of the stoichiometric cation vacancies with energy levels situated in the lower half of the band gap which is common for various complex chalcogenide semiconductors . The invariability of the conductivity type with х , accompanied by the heterovalent substitution of Sn for In (with the formation of donor centers), indicates that the concentration of the doping atoms Sn is smaller with respect to the concentration of the stoichiometric vacancies as well as other structural defects.…”
Section: Resultsmentioning
confidence: 99%
“…All investigated crystals, regardless of х , are high‐resistant materials with p ‐type conductivity according to the sign of thermo‐EMF coefficient. The hole‐originated conductivity for the Tl 1–x In 1–x Sn x S 2 crystals may be caused by the acceptor origin of the stoichiometric cation vacancies with energy levels situated in the lower half of the band gap which is common for various complex chalcogenide semiconductors . The invariability of the conductivity type with х , accompanied by the heterovalent substitution of Sn for In (with the formation of donor centers), indicates that the concentration of the doping atoms Sn is smaller with respect to the concentration of the stoichiometric vacancies as well as other structural defects.…”
Section: Resultsmentioning
confidence: 99%
“…All previous calculations (known to the author) on the band structure of thallous halides are performed applying the Slater approximation (u = 1) for the exchange-correlation potential. Therefore, the calculations possess only empirical character and the e(r) distribution (and E(k) dispersion as well) is approximate [17]. The results for T1I single crystals [8] (space group D;:) demonstrate the restricted validity of such an approach for this compound.…”
Section: Discussionmentioning
confidence: 99%
“…In [17] analytical expressions for the integrals (13), (14) were used. The lattice parameter of TI1 (NaCl-type) crystals is: a = 0.649 nm.…”
Section: Followsmentioning
confidence: 99%
“…The calculations that have been done are either very old non-self-consistent calculations [5], or they were done without taking into account the experimental data [6]. In this work we report a tight-binding calculation of Ag,AsS, band structure corrected by experimental results on the polarized optical frequencies in visible and infrared spectral region as the scale factor.…”
Section: Methodsmentioning
confidence: 99%
“…Our previous investigations using the experimental methods of modulated spectroscopy [6] have revealed the absence of exciton effects. This can be explained by the great number of screening carriers.…”
Section: Fig L a And Bmentioning
confidence: 98%