Spectral and conductivity features of novel ternary Tl_1–xIn_1–xSn_xS₂ crystals

Abstract

Complex studies of novel Tl 1-x In 1-x Sn x S 2 single crystalline alloys (x = 0.1; 0.2; 0.3; 0.4; 0.5) were performed. Here we present the study of the effect of the partial cation substitution of Sn ions by In ions on their optical absorption and photoconductivity characteristics. The dependences of optical and electric properties of the crystals of the crystalline solid solutions on temperature and composition are discussed within a framework of intrinsic defect states forming then fundamental absorption. The calculations of the charged defects responsible for the experimentally determined values of 0 were done. Some increase of the concentration for charged defects with the sample temperature is probably related to the thermal ionization of some of the defects that were neutral at lower temperature. The results obtained will be analyzed within the framework of the intrinsic defect's model.

Novel Quaternary TlGaSn2Se6 Single Crystal as Promising Material for Laser Operated Infrared Nonlinear Optical Modulators

“…[54] that the substitution is possible because the ionic radii are nearly equal, 0.63 Å for Fe 3+ and 0.61 Å for Ga 3+ . Therefore, it may be assumed that the~790 nm peak (~1.57 eV) in the TlGaSn 2 Se 6 crystals is related to the statistical substitution of Ga 3+ (0.61 Å) ions with Sn 4+ ions (0.69 Å), which agrees with the data reported in [19,28].…”

“…The most numerous group are the 1-1-1-4 compounds with the equimolar ratio of the system components. Currently, six such sulphide compounds are known: TlInSiS 4 (SG Pbmn) [25], TlInGeS 4 (dimorphous, SG Pa3 and Pnma) [27], TlInSnS 4 (SG P6 3 /mmc) [28,29], TlAlSiS 4 , TlGaSiS 4 , and TlGaGeS 4 (SG Pbmn) [30]. The crystal structure is fully determined only for the first three of these compounds.…”

Vast Structural and Polymorphic Varieties of Semiconductors AMM′Q4 (A = K, Rb, Cs, Tl; M = Ga, In; M′ = Ge, Sn; Q = S, Se)

“…For the 32 different element combinations, a total of 52 different polymorphs have been reported. The only exceptions are TlInSnQ 4 (Q = S, Se), which rather form various solid solutions of Sn 4+ in layered TlInQ 2 (TlGaSe 2 structure type). − A similar situation has been reported for TlInGeSe 4 . However, we still managed to isolate a quaternary phase from several batches.…”

Manifestation of intrinsic defects in the band structures of quaternary chalcogenide Ag2In2SiSe6and Ag2In2GeSe6crystals

“…12 All of the mentioned systems, even the crystalline chalcogenides, contain plenty of intrinsic point defects of different origins. 13 This fact is usually neglected during theoretical studies and calculations but the role of the defects may be very crucial. Structural imperfections make irrefutable contributions to the band structure and optical character of the materials which are principally different to perfect crystalline features.…”