Photoinduced Structural Instability of the InP<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mo stretchy="false">(</mml:mo><mml:mn>110</mml:mn><mml:mo stretchy="false">)</mml:mo><mml:mtext mathvariant="normal">−</mml:mtext><mml:mo stretchy="false">(</mml:mo><mml:mn>1</mml:mn><mml:mo>×</mml:mo><mml:mn>1</mml:mn><mml:mo stretchy="false">)</mml:mo></mml:math>Surface

Gotoh, Tetsuji; Kotake, Shigeo; Ishikawa, Ken-ichi; Kanasaki, J.; Tanimura, Katsumi

doi:10.1103/physrevlett.93.117401

Cited by 17 publications

(22 citation statements)

References 15 publications

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“…22͒ while clustering occurs in Si͑111͒-͑2 ϫ 1͒, 9 InP͑110͒-͑1 ϫ 1͒, and GaAs͑110͒-͑1 ϫ 1͒. 23 Due to the low surface absorption coefficient of 1064 nm radiation in Si, photoexcitation takes place in the bulk, 1 resulting in a high density of electron-hole pairs that can transfer to the surface leading to charge redistribution and surface instability. 7 Hole localization onto particular surface sites results in selective bond breaking via a proposed THL mechanism.…”

Section: Resultsmentioning

confidence: 99%

Nonthermal laser-induced formation of crystalline Ge quantum dots on Si(100)

Hegazy

Elsayed-Ali

2008

Journal of Applied Physics

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The effects of laser-induced electronic excitations on the self-assembly of Ge quantum dots on Si͑100͒-͑2 ϫ 1͒ grown by pulsed laser deposition are studied. Electronic excitations due to laser irradiation of the Si substrate and the Ge film during growth are shown to decrease the roughness of films grown at a substrate temperature of ϳ120°C. At this temperature, the grown films are nonepitaxial. Electronic excitation results in the formation of an epitaxial wetting layer and crystalline Ge quantum dots at ϳ260°C, a temperature at which no crystalline quantum dots form without excitation under the same deposition conditions.

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Section: Resultsmentioning

confidence: 99%

Nonthermal laser-induced formation of crystalline Ge quantum dots on Si(100)

Hegazy

Elsayed-Ali

2008

Journal of Applied Physics

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“…Reconstructed surfaces show structural and electronic properties significantly different from those in bulk crystals, and exhibit several surface-specific phenomena such as structural instability under electronic excitation. As demonstrated by several recent studies, laser excitation induces electronic bond rupture, which leads to drastic changes in semiconductor surface structure and desorption of constituent atoms [2][3][4][5][6][7][8][9][10][11][12]. This structural instability induced by electronic excitation, excitation-induced structural instability, is intrinsic in the sense that atoms at perfect surface sites are subject to bond rupture [3][4][5][6][7][8][10][11][12].…”

Section: Introductionmentioning

confidence: 99%

“…As demonstrated by several recent studies, laser excitation induces electronic bond rupture, which leads to drastic changes in semiconductor surface structure and desorption of constituent atoms [2][3][4][5][6][7][8][9][10][11][12]. This structural instability induced by electronic excitation, excitation-induced structural instability, is intrinsic in the sense that atoms at perfect surface sites are subject to bond rupture [3][4][5][6][7][8][10][11][12]. Therefore, studies to elucidate the fundamental mechanism of the instability are important not only for the basic research of light-matter interaction, but also for deeper understanding of the physical properties of semiconductor surfaces.…”

Section: Introductionmentioning

confidence: 99%

Excitation-induced structural instability of semiconductor surfaces

Tanimura

Kanasaki

2006

J. Phys.: Condens. Matter

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The present work reviews laser-induced electronic processes of structural instability on covalent semiconductor surfaces. In particular, we concentrate on the mechanism of the instability that takes place at the intrinsic sites of reconstructed surface structures. In order to elucidate the primary processes involved, we focus our attention on experimental results obtained by scanning tunnelling spectroscopy studies, to reveal surface structural changes at the atomic level, and by post-ionization spectroscopy studies, to probe desorption processes with high sensitivity. First, the results obtained for reconstructed Si surfaces and {110} surfaces of III–V compound semiconductors are systematically surveyed. The instability is characterized by local bond rupture at intrinsic surface sites that show important common features. Also, we find significantly different aspects of the instability, which depend on the basic properties of surfaces. Based on the characteristics revealed by the experimental results, we then propose a mechanistic model based on the generalized two-hole localization mechanism, and demonstrate, through the quantitative analysis of typical experimental results, that the model describes all the important features quantitatively and consistently.

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“…To date, attempts to demonstrate site specific desorption have been restricted to laser stimulated desorption of Si adatoms from Si(1 1 1)-(7 · 7) [1], Si dimers on Si(1 0 0)-(2 · 1) [2], and P and In atoms from InP(1 1 0)-(1 · 1) [3]. Though it is well known that the electronic excitations involved in laser stimulated desorption of semiconducting and ionic materials are often the same as those governing electron stimulated desorption (ESD) [4], the success in demonstrating spatial control and site specificity in ESD is indeed limited.…”

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confidence: 99%