Zone specificity in low energy electron stimulated desorption of Cl+ from reconstructed Si(111)-7×7:Cl surfaces

Oh, Doogie; Sieger, M. T.; Orlando, Thomas M.

doi:10.1016/j.susc.2006.07.004

Cited by 5 publications

(5 citation statements)

References 26 publications

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“…The Si(111)-7x7 surface has been extensively used in studies of molecular adsorption, desorption and more particularly STM induced manipulation both of atomic and molecular adsorbates and the silicon surface itself [20][21][22][23][24][25]. It has also demonstrated photo-induced silicon atom desorption through laser irradiation [26][27][28].…”

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confidence: 99%

Molecular and atomic manipulation mediated by electronic excitation of the underlying Si(111)-7x7 surface

Rusimova

Sloan

2016

Nanotechnology

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We report the local atomic manipulation properties of chemisorbed toluene molecules on the Si(111)-7x7 surface and of the silicon adatoms of the surface. Charge injected directly into the molecule, or into its underlying bonding silicon adatom, can induce the molecule to change bonding site. The voltage dependence of the rates of these processes match closely with scanning tunnelling spectroscopy of the toluene and adatom species. The branching ratio between toluene molecules which are moved to a neighbouring site, or those that travel further is invariant to voltage, suggesting a common final manipulation step for both injection into the molecule and into the bonding adatom site. At low temperatures the rate of silicon adatom manipulation matches that of toluene manipulation, further suggesting that all these manipulation processes are driven by electronic excitation of the underlying silicon surface. Our results therefore suggest that a common non-adiabatic process mediates atomic and molecular manipulation induced by the STM on the Si(111)-7x7 surface and may also mediate similar manipulation induced by the laser irradiation of the Si(111)-7x7 surface.

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confidence: 99%

Molecular and atomic manipulation mediated by electronic excitation of the underlying Si(111)-7x7 surface

Rusimova

Sloan

2016

Nanotechnology

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“…In an effort to experimentally demonstrate DESD and to illustrate the role DESD can play in determining which sites are ESD active, we have examined the yield of Cl + from the Si(111)-(1 × 1):Cl, Si(7 × 7)A:Cl and Si(7 × 7)B:Cl surfaces as a function of azimuthal angle and incident electron energy. Although the apparatus and approach have been described in detail elsewhere [14], we briefly describe the most relevant aspects. For preparation of the Si(111):Cl sample, n-type Si(111) substrates were cleaned in situ by heating to 1300 • C for 10 s to desorb the oxide layer.…”

Section: Experimental Approach and Sample Preparationmentioning

confidence: 99%

“…In view of the DESD results, the threshold energy of 17 eV and the available information on the surface electronic structure [35][36][37][38][39][40] we have proposed two mechanisms for the ESD of Cl + from Si(111) surfaces [13,14,41]. The first is based on the initial ionization of the Si 3s level.…”

Section: Desd In the Si(111)-(1 × 1):cl Systemmentioning

confidence: 99%

“…Previously, we observed interference effects in the electron-stimulated desorption of Cl + from Cl terminated Si(111) surfaces and referred to this potentially useful effect as diffraction in electron-stimulated desorption (DESD) [13,14]. Related work on standing wave effects in high-energy (e.g.…”

Section: Introductionmentioning

confidence: 99%

“…In this paper, we re-examine the DESD of Cl + from Si(111)-(1 × 1):Cl [13,14] and present information on the Si(111)-(7 × 7):Cl surfaces that demonstrates the ability to extract site specific desorption information. We also describe DESD with an abridged theoretical description based, in part, upon previous LEED [18], extended x-ray absorption near edge structure (XANES) [19], and photoelectron diffraction [20] theories.…”

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

A theoretical description and experimental demonstration of diffraction in electron-stimulated desorption

Oh¹,

Sieger²,

Orlando³

2010

J. Phys.: Condens. Matter

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The role of diffraction in electron-stimulated desorption (DESD) is demonstrated experimentally and described theoretically. Specifically, initial state effects in DESD of Cl (+) from Si(111)-(1 × 1):Cl and Si(111)-(7 × 7):Cl are examined and a theoretical treatment that includes spherical-wave effects and multiple scattering of low-energy incident electrons is presented. Although contributions from complicated defect configurations such as SiCl2 and SiCl3 cannot be ruled out, comparison of the experimental data with theory indicates that Cl (+) desorption from Si(111)-(1 × 1):Cl and Si(111)-(7 × 7):Cl surfaces may be dominated by monochloride terminal sites. The initial states probably contain significant Si 3s and/or Si-Cl σ-bonding character. In the Si(111)-(7 × 7):Cl case, these excitations favor a propensity for Cl (+) desorption from the unfaulted, rather than faulted, zones of the 7 × 7 reconstructed rest atom area. This propensity may be related to increased screening and hole localization in the Si-Si backbonds within the faulted region. Finally, introducing Debye-Waller factors into each scattering path accounts for much of the experimentally observed DESD width broadening at room temperature.

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Inelastic electron scattering and energy-selective negative ion reactions in molecular films on silicon surfaces

Lane¹,

Orlando²

2007

Applied Surface Science

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Zone specificity in low energy electron stimulated desorption of Cl+ from reconstructed Si(111)-7×7:Cl surfaces

Cited by 5 publications

References 26 publications

Molecular and atomic manipulation mediated by electronic excitation of the underlying Si(111)-7x7 surface

Molecular and atomic manipulation mediated by electronic excitation of the underlying Si(111)-7x7 surface

A theoretical description and experimental demonstration of diffraction in electron-stimulated desorption

Inelastic electron scattering and energy-selective negative ion reactions in molecular films on silicon surfaces

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