Photoinduced surface deformations in ion-conducting Ag–As–S glasses. I. Isotropic deformations produced by small light spots

Abstract

Prominent surface deformations appear in Ag-As-S chalcogenide glasses when exposed to focused laser beams. Deformation behaviors change with the beam diameter, the photon energy, the temperature at which illumination is provided, and the sample composition. In thin AgAsS 2 films exposed at room temperature to a 2.0 eV light spot with a diameter of 2 m, an isotropic convex structure with a height of ϳ0.1 m appears. The expanded region accompanies an Ag-content enhancement by ϳ3 at. %, which suggests that the deformation is caused by photoinduced accumulation of Ag ϩ ions.

Structural elucidation of AgAsS2 glass by the analysis of clusters formed during laser desorption ionisation applying quadrupole ion trap time‐of‐flight mass spectrometry

“…A series of clusters with an increasing number of Ag 2 S units was observed. The general stoichiometry of the clusters in the series was found to be Ag m AsS x (m = even numbers in the range 16, 20-32 while the value of x was in the range [10][11][12][13][14][15][16][17][18] or MS n analysis MS 2 spectra were recorded for the peaks at m/z~1593.93, 1343.83,~1098.18, and~850.35 via collision-induced dissociation (CID) using argon. For example, the product ion spectrum obtained for the cluster at m/z 1343.83 is shown in Fig.…”

“…It exhibits photo-induced phenomena such as photo-surface deposition and photo-induced chemical modification. [10][11][12] In AgAsS 2 glass, the electrical conductivity is governed by the migration of Ag + ions. Therefore, the material is regarded as an ion-conducting amorphous semiconductor.…”

“…AgAsS 2 glass shows some interesting physical and electronic properties. It exhibits photo‐induced phenomena such as photo‐surface deposition and photo‐induced chemical modification . In AgAsS 2 glass, the electrical conductivity is governed by the migration of Ag + ions.…”