Photoinduced topological phase transition in epitaxial graphene

Zhai, Xuechao; Jin, Guojun

doi:10.1103/physrevb.89.235416

Cited by 77 publications

(61 citation statements)

References 43 publications

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“…On the other hand, one could also be interested in addressing the role of scattering effects at finite momenta. In this context, it has been recently shown by Zhai and Jin in [35] that, within the off-resonant approximation for epitaxial graphene, the photon dressing of the static eigenstates leads to an asymmetry between the scattering amplitudes for the intervalley and intravalley conductances. This is explained as a consequence of the degeneracy lifting of the valley degree of freedom which is due to the timereversal symmetry breaking introduced by the electromagnetic radiation field.…”

Section: Discussionmentioning

confidence: 99%

Photoinduced pseudospin effects in silicene beyond the off-resonant condition

et al. 2015

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We study the photoinduced manipulation of charge carriers in monolayer silicene subject to intense electromagnetic terahertz radiation. Considering the Dirac cone approximation and going beyond the off-resonant condition for large frequencies of the radiation field, where only virtual photon processes are allowed, we present the exact zero-momentum pseudospin polarization and numerical results for the quasienergy band structure and time-averaged density of states. We find that resonant processes, due to real photon emission and absorbtion processes, induce a band inversion that qualitatively modifies the quasienergy spectrum. These band-structure changes manifest themselves as an inversion of the averaged pseudospin polarization. Through the analysis of the time-averaged density of states we find that effective photoinduced gap manipulation can only be achieved in the intermediate and strong matter-radiation coupling regime where the off-resonant approximation breaks down.

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Section: Discussionmentioning

confidence: 99%

Photoinduced pseudospin effects in silicene beyond the off-resonant condition

et al. 2015

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“…[135][136][137][138][139][140][141] The interplay between the superconductivity and the linear dispersion of graphene is responsible for not only the specular Andreev reflection, [142][143][144][145][146][147][148][149] but also the unusual supercurrent phenomenon (i.e., a finite Josephson current induced by the zero energy state), while controllable superconductor nanoelectronics require a high on/off rate. Therefore, controllable Josephson current in graphene superconductor junction needs to be realized.…”

Section: Strain-manipulated Graphene Superconductor Nanoelectronicsmentioning

confidence: 99%

Generalized Hamiltonian for a graphene subjected to arbitrary in-plane strains

Wang

Liu

2015

Funct. Mater. Lett.

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The interplay between the linear elastic deformation up to 20% and the unique electronic properties of graphene nanostructures offers an attractive prospect to manipulate their properties by strain. Here we review the recent progress on the electronic response of graphene to the in-plane strains, including the strain-modulated electronic structure and the strain-modulated spin, valley and superconducting transports. A generalized Hamiltonian for a graphene was constructed subjected to arbitrary in-plane strains. The Hamiltonian is helpful to design and optimize the graphene-based nano-electromechanical systems (NEMS).

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“…Thus, the use of monochromatic laser irradiation does indeed allow for interesting topological scenarios in two-dimensional systems. For instance, the authors of 51 have shown that due to the competition of staggered lattice potential and photon dressing in epitaxial graphene, a threshold value of light intensity is necessary to realize a Floquet topological insulator. In this paper, we propose a different mechanism for the exper-imental realization of a controllable Quantum Spin Hall effect in graphene.…”

Section: Introductionmentioning

confidence: 99%

Photoprotected spin Hall effect on graphene with substrate induced Rashba spin–orbit coupling

López¹,

Molina²

2020

J. Phys.: Condens. Matter

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We propose an experimental realization of the Spin Hall effect in graphene by illuminating a graphene sheet on top of a substrate with circularly polarized monochromatic light. The substrate induces a controllable Rashba type spin-orbit coupling which breaks the spin-degeneracy of the Dirac cones but it is gapless. The circularly polarized light induces a gap in the spectrum and turns graphene into a Floquet topological insulator with spin dependent edge states. By analyzing the high and intermediate frequency regimes, we find that in both parameter limits, the spin-Chern number can be tuned by the effective coupling strength of the charge particles to the radiation field and determine the condition for the photoinduced topological phase transition.

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Photoinduced topological phase transition in epitaxial graphene

Cited by 77 publications

References 43 publications

Photoinduced pseudospin effects in silicene beyond the off-resonant condition

Photoinduced pseudospin effects in silicene beyond the off-resonant condition

Generalized Hamiltonian for a graphene subjected to arbitrary in-plane strains

Photoprotected spin Hall effect on graphene with substrate induced Rashba spin–orbit coupling

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