Photoionization cross-section of donor impurity in spherical quantum dots under electric and intense laser fields

Burileanu, L.M.

doi:10.1016/j.jlumin.2013.08.043

Cited by 57 publications

(14 citation statements)

References 25 publications

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“…In consequence, both the degree of the electron confinement and the binding energy decrease as well. This result is in consistent with reported results in [39] (and references there in). Also, in order to see how the effective width of the δ-type axial potential change with respect to the intense laser field, we report the variations of the axial confinement potential profile and the squared ground state wave function for different values of ILF parameters in figure 3.…”

Section: Resultssupporting

confidence: 94%

“…They have suggested that the strong localization of the electronic and impurity states, due to the QW and QD, is further enhanced by laser confinement. Using a perturbative method, Burileanu [39] have investigated the behavior of the binding energy and photoionization cross-section of a donor impurity in spherical GaAs-GaAlAs QDs under the influence of electric and intense high-frequency laser fields. The obtained results show that the amplitude of photoioniz ation cross-section grows as the dot radius increases and the peak of the cross-section blue shifts with the laser intensity increment.…”

Section: Introductionmentioning

confidence: 99%

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Hydrogenic donor impurities in $\delta$ -doped cylindrical quantum dots under intense laser field

et al. 2019

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A theoretical study of the effects of non-resonant intense laser field on the donor impurity binding energy in a cylindrical quantum dot with δ-doped axial potential is performed in the framework of the effective mass approximation. The obtained results indicate that, 2D impurity concentration and intense laser field intensity have a significant effect on the impurity binding energy and energy levels of electrons in the cylindrical quantum dots with δ-type axial potential.

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Section: Resultssupporting

confidence: 94%

Section: Introductionmentioning

confidence: 99%

Hydrogenic donor impurities in $\delta$ -doped cylindrical quantum dots under intense laser field

et al. 2019

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“…During the few last decades, IIInitrides semiconductor systems such AlN, GaN, (In,Ga)N and (Al,Ga)N have emerged as the adequate materials for applications such solar cell, laser, diode laser. They present attractive properties like chemical and thermal stabilities, great radiation resistance and high absorption and also because the recent progress in quality of materials grown by different technique such beam epitaxy molecular (BEM) and metal organic chemical vapor deposition (MOCVD) [17][18][19][20][21][22][23][24][25][26].…”

Section: Introductionmentioning

confidence: 99%

Impact of QW coupling on the binding energy in InGaN/GaN under the effects of the size, the impurity and the internal composition

et al. 2020

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In the present paper, the binding energy of hydrogenic shallow-donor impurity in simple and double coupled quantum wells based on unstrained wurtzite (In,Ga)N/GaN is investigated. Considering the effective-mass and dielectric mismatches between the well and its surrounding matrix, the numerical calculations are performed within the framework of the parabolic band and the single band effective-mass approximations under the finite potential barrier using finite element method (FEM). According to our results, it appears that the main effect of the wells coupling is to enhance the binding energy. It is also obtained that the binding energy is strongly sensitive to the internal and external parameters and can be adjusted by the quantum well/barrier width, the impurity position and the internal Indium composition. Our results are in good agreement with the finding especially for those obtained by the variational approach.

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“…9−15 Here, we built an optical tweezers system coupled with a laser confocal fluorescence imaging system, which can fluorescently image and trap the viruses in the culture medium in real time. 16,17 Under these conditions, we harnessed this technology to achieve fluorescence imaging of viruses and obtain trap stiffness. Here, we built an optical tweezers system coupled with a laser confocal fluorescence imaging system, which can fluorescently image and trap the viruses in the culture medium in real time.…”

Section: ■ Introductionmentioning

confidence: 99%

Boosting the Optical Trapping of a Single Virus by Quantum Dots Tagging Increases Virus Polarizability and Trap Stiffness

Xu,

Li,

Liu

et al. 2023

ACS Appl. Mater. Interfaces

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Optical tweezers use the momentum of photons to capture and manipulate particles in a noncontact way. Although related techniques have been widely used in biology and materials, research on viruses is still relatively limited. It is hard to optically trap viruses because trap stiffness is rather low and the size of viruses is too small. Here, we used an optical tweezers system coupled with a laser confocal fluorescence imaging system, which allows individual viruses to be imaged and trapped in real time and analyzed using multiple parameters in the culture medium. We show that a single virus tagged by quantum dots (QDs) can increase the real part of polarizability, further increasing gradient force and trap stiffness. With this method, we not only can trap and manipulate viruses in real time but also can analyze their interactions with other targets.

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Photoionization cross-section of donor impurity in spherical quantum dots under electric and intense laser fields

Cited by 57 publications

References 25 publications

Hydrogenic donor impurities in $\delta$ -doped cylindrical quantum dots under intense laser field

Hydrogenic donor impurities in $\delta$ -doped cylindrical quantum dots under intense laser field

Impact of QW coupling on the binding energy in InGaN/GaN under the effects of the size, the impurity and the internal composition

Boosting the Optical Trapping of a Single Virus by Quantum Dots Tagging Increases Virus Polarizability and Trap Stiffness

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