Photolithography-free fabrication of a-IGZO thin film transistor with interconnecting metal lines

Jeon, Sangeon; Cho, Jaewan; Cho, Sung Min

doi:10.1016/j.mssp.2020.105417

Cited by 7 publications

(2 citation statements)

References 12 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Thin-film transistor (TFT) technology has contributed to a marked improvement in industry. [1][2][3][4][5] Hydrogenated amorphous silicon (a-Si:H) TFTs, for instance, have been widely utilized in various ways. [6][7][8][9] However, devices that require higher mobility beyond that of a-Si:H TFTs lead us to a quest for alternative channel materials.…”

Section: Introductionmentioning

confidence: 99%

Investigation on electrical characteristics of TFTs fabricated with germanium films crystallized by atmospheric-pressure micro thermal plasma jet irradiation

Sato¹,

Hanafusa²,

Higashi³

2022

Jpn. J. Appl. Phys.

View full text Add to dashboard Cite

Crystalline-germanium (c-Ge) is an attractive material for a thin-film transistor (TFT) channel because of its high carrier mobility and applicability to a low-temperature process. We present the electrical characteristics of c-Ge crystallized by atmospheric pressure micro-thermal-plasma-jet (µ-TPJ). The µ-TPJ crystalized c-Ge showed the maximum Hall mobility of 1070 cm2·V−1·s−1 with its hole concentration of ~ 1016 cm−3, enabling us to fabricate the TFT with field-effect mobility (μ FE) of 196 cm2·V−1·s−1 and ON/OFF ratio (R ON/OFF) of 1.4 × 104. On the other hand, RON/OFFs and μFEs were dependent on the scanning speed of the TPJ, inferring different types of defects were induced in the channel regions. These findings show not only a possibility of the TPJ irradiation as a promising method to make a c-Ge TFT on insulating substrates.

show abstract

Section: Introductionmentioning

confidence: 99%

Investigation on electrical characteristics of TFTs fabricated with germanium films crystallized by atmospheric-pressure micro thermal plasma jet irradiation

Sato¹,

Hanafusa²,

Higashi³

2022

Jpn. J. Appl. Phys.

View full text Add to dashboard Cite

show abstract

“…Bottom-gate thin film transistors (TFTs) have attracted much attention because of their advantages in industry. [1][2][3][4][5] By using backside exposure of photoresist on the top of the plate, the bottom-gate acts as a mask to define the channel length. 6,7) With this approach, it only needs four masks which is the smallest mask number for TFTs fabrication process.…”

Section: Introductionmentioning

confidence: 99%

Investigation on characteristics of millisecond solid-phase crystallized silicon films annealed by atmospheric pressure DC arc discharge micro-thermal-plasma-jet and their application to bottom-gate thin film transistors fabrication

Nguyêñ¹,

Hanafusa²,

Kawakita³

et al. 2021

Jpn. J. Appl. Phys.

View full text Add to dashboard Cite

Millisecond solid phase crystallization (SPC) of silicon film induced by micro-thermal-plasma-jet is a potential method for small grain bottom-gate thin-film transistors (TFTs). The characteristics of millisecond SPC films under the conditions of scanning speed (v) from 500 to 900 mm s−1 were investigated. The films show good crystalline quality when formed at a slow v. The crystallinity estimated by micro-Raman spectroscopy is 61% when v was 500 mm s−1. Hall effect measurement results indicate that under v at 500 mm s−1, the resistivity is 1.36 × 10−3 Ωcm, the carrier concentration is 3.41 × 1020 cm−3, and the carrier mobility is 12.2 cm2 Vs−1. Millisecond SPC films surface reduce larger than 76% roughness compared to that of the melted film surface. Bottom-gate TFTs fabricated with millisecond SPC film, which annealed under conditions close to melted condition, show high field effect mobility of 28 cm2 Vs−1 and good uniformity.

show abstract

A top-down fabrication process for a-IGZO thin film transistor and patterned organic light-emitting diode

Park

Na²,

Lee³

et al. 2023

Korean J. Chem. Eng.

View full text Add to dashboard Cite

Photolithography-free fabrication of a-IGZO thin film transistor with interconnecting metal lines

Cited by 7 publications

References 12 publications

Investigation on electrical characteristics of TFTs fabricated with germanium films crystallized by atmospheric-pressure micro thermal plasma jet irradiation

Investigation on electrical characteristics of TFTs fabricated with germanium films crystallized by atmospheric-pressure micro thermal plasma jet irradiation

Investigation on characteristics of millisecond solid-phase crystallized silicon films annealed by atmospheric pressure DC arc discharge micro-thermal-plasma-jet and their application to bottom-gate thin film transistors fabrication

A top-down fabrication process for a-IGZO thin film transistor and patterned organic light-emitting diode

Contact Info

Product

Resources

About