Photoluminescence and minority carrier lifetime of quinary GaInAsSbBi grown on GaSb by molecular beam epitaxy

Abstract

Quinary GaInAsSbBi is grown by molecular beam epitaxy, and the alloy is demonstrated with a bandgap energy of 291 meV (λcutoff ∼ 4.3 μm) and a minority carrier lifetime of 0.34 μs at 120 K. The GaInAsSbBi epilayer is grown to a thickness of 1 μm at 400 °C and lattice-matched to the GaSb substrate with a Bi mole fraction of 0.13% measured by Rutherford backscattering spectroscopy. Steady-state and time-resolved photoluminescence measurements are performed to gauge the comparative bandgaps and optical quality of GaInAsSbBi as well as InAsSbBi and GaInAsSb reference samples. A recombination rate analysis is performed on the low-injection temperature-dependent minority carrier lifetime to extract the Shockley–Read–Hall defect level and intrinsic doping concentration of the GaInAsSbBi.

Growth of nanotextured thin films of GaInAsP and GaInAsSbBi solid solutions on GaP substrates by pulsed laser deposition

“…The objects of study were Ga x In 1−x As y P 1−y and Ga x In 1−x As 1−y−z Sb y Bi z solid solutions deposited on GaP substrates. The solid solutions consisting of two group III metals and three highly volatile group V metalloids were selected based on the indicated difficulties in PLD, as well as on the relevance of their practical use for growing optoelectronic heterostructures in the visible [8] and infrared [9] ranges. The study of solid solutions with Bi and Sb is topical due to the discovery of the effect of valence band anticrossing [10], which significantly affects the optoelectronic properties of dilute A. S. Pashchenko, O. V. Devitsky, L. S. Lunin, M. L. Lunina, O. S. Pashchenko, E. M. Danilina semiconductors.…”

Structural properties of GaInAsSbBi solid solutions grown on GaSb substrates

“…Heterostructures on GaSb substrates are of practical interest for mid-and far-infrared devices. The GaInAsSbBi solid solution is a good candidate for the mid-infrared range as already at 2% Bi an absorption edge of 5 µm at 120 K can be reached [5]. The relevance of the development of bismuth-containing solid solutions is due to the possibility of improving the microstructure of epitaxial layers due to the proximity of the covalent radii of Bi and some elements of groups III and V. Also, Bi is the largest low-toxicity group V element which drastically reduces the band gap width of III−V compounds to between 55−90 meV/% Bi [6].…”

“…Previously, researchers have studied GaSb-based heterostructures that do not contain Bi [8][9][10]. The molecular beam epitaxy of GaInAsSb solid solution with Bi fraction of 0.13% on GaSb (100) substrates [5] has been known to be realized by now.…”