Photoluminescence and Raman scattering characterization of Cu2ZnSiQ4 (Q=S, Se) single crystals

Levcenco, Sergiu; Dumcenco, Dumitru; Wang, Y.P.; Wu, Jie; Huang, Y. S.; Arushanov, E.; Tiong, K. K.

doi:10.1016/j.optmat.2012.01.004

Cited by 33 publications

(14 citation statements)

References 21 publications

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“…(f). This high band gap value is in good agreement with the results reported on CZSiSe single crystal , which therefore would confirm the synthesis of the CZSiSe thin film by using our multi‐step process.…”

Section: Resultssupporting

confidence: 91%

“…They can be obtained by replacing Indium in CIGSSe with relatively earth abundant and non‐toxic materials . In this category of compounds, Cu 2 ZnSiSe 4 (CZSiSe) has attracted significant interest because of its optical , thermoelectric , and optoelectronic properties . The optical band gap of CZSiSe was studied both theoretically and experimentally on single crystals and energies of direct transitions in the range of 2.33–2.35 eV at room temperature were obtained .…”

Section: Introductionmentioning

confidence: 99%

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Multistep deposition of Cu₂Si(S,Se)₃ and Cu₂ZnSiSe₄high band gap absorber materials for thin film solar cells

Elanzeery

Buffière

Messaoud

et al. 2015

Physica Rapid Research Ltrs

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Cu2ZnSi(S,Se)4 and Cu2Si(S,Se)3 are potential materials to obtain cost effective high band gap absorbers for tandem thin film solar cell devices. A method to synthesize Cu2SiS3, Cu2SiSe3and Cu2ZnSiSe4thin film absorbers is proposed. This method is based on a multistep process, using sequential deposition and annealing processes. X‐ray diffraction analysis performed on the final thin films have confirmed the presence of the Cu2Si(S,Se)3 and Cu2ZnSiSe4phases. Scanning electron microscopy images revealed the formation of polycrystalline layers with grains size up to 1 µm. The band gap of the ternary Cu2SiSe3 and Cu2SiS3, and quaternary Cu2ZnSiSe4 based thin films as determined from optical and photoluminescence measurements are found to be close to their theoretical values. (© 2015 WILEY‐VCH Verlag GmbH &Co. KGaA, Weinheim)

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Section: Resultssupporting

confidence: 91%

Section: Introductionmentioning

confidence: 99%

Multistep deposition of Cu₂Si(S,Se)₃ and Cu₂ZnSiSe₄high band gap absorber materials for thin film solar cells

Elanzeery

Buffière

Messaoud

et al. 2015

Physica Rapid Research Ltrs

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“…Recent Raman scattering studies of Cu

_{2}

ZnSiSe

_{4}

performed at room temperature revealed much smaller number of vibrational modes than predicted theoretically and observed experimentally for other quaternary counterparts with wurtzstannite structure , while the number of modes in unpolarized spectra at 90 K increases notably. Moreover, only a small number of observed modes were unambiguously assigned to a certain symmetry based on the dependence of their intensity on the scattering geometry.…”

Section: Introductionmentioning

confidence: 71%

Crystal structure and vibrational properties of Cu₂ZnSiSe₄quaternary semiconductor

Litvinchuk

Dzhagan

Yukhymchuk

et al. 2016

Phys. Status Solidi B

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The crystal structure of Cu2ZnSiSe4 semiconductor, grown by the chemical vapor transport method, was determined by the powder and single‐crystal X‐ray diffraction and shown to be orthorhombic wurtzstannite (space group P mn21). Lattice dynamics of Cu2ZnSiSe4 is studied by the low‐temperature off‐resonant polarized and resonant Raman scattering. Out of the total 45 optical vibrational modes allowed by the symmetry, 37 are observed in the spectra and are assigned to the specific lattice eigenmodes based on their polarization properties and a comparison of frequencies with the results of density functional lattice dynamics calculations. Good agreement between theoretical and experimental mode frequencies is established. The vibrational patterns for the most intense spectral lines in experimental spectra as well as pronounced resonant enhancement of Si‐related modes are discussed.

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“…On the other hand, Cu 2 ZnSnS 4 , which is analogous to CuInS 2 , is attractive for the advantage of low prices of constituent elements. The conversion efficiency of 12.6% has been achieved in a Cu 2 ZnSn(S,Se) 4 thin film solar cell [1].…”

mentioning

confidence: 99%

Characterization of CuInS₂‐Cu₂ZnSnS₄ crystals grown from the melt

Oishi

Nakamura

Yamazaki

et al. 2015

Phys. Status Solidi C

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Cu2(2.00‐x)((2In)y (ZnSn)(1.00‐y))x S4 crystals were grown from the melt. 23 samples with different x and y values were synthesized by heating constituent elementary Cu, In, S and Zn‐Sn alloy at 1,250 °C for 10 hours in each evacuated fused‐quartz ampule. All samples were characterized by powder X‐ray diffraction analysis. Two peaks are seen at the 112 diffraction positions in 0.3 ≤ y ≤ 0.9. The FWHM of the 112 diffraction peak broadened in 0.2 ≤ y ≤ 0.7. Lattice constants were obtained by Rietveld method using two tetragonal structure models simultaneously in the refinement. Both a and c obtained as CuInS2 phase changed almost linearly in y ≥ 0.7; therefore the existence of CuInS2 phase solid solution containing Zn and Sn was indicated in this region. The miscibility gap was also suggested as the region of 0.2 ≤ y ≤ 0.7 in our results because of the shape and the broadening of the 112 diffraction peaks. (© 2015 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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Photoluminescence and Raman scattering characterization of Cu2ZnSiQ4 (Q=S, Se) single crystals

Cited by 33 publications

References 21 publications

Multistep deposition of Cu₂Si(S,Se)₃ and Cu₂ZnSiSe₄high band gap absorber materials for thin film solar cells

Multistep deposition of Cu₂Si(S,Se)₃ and Cu₂ZnSiSe₄high band gap absorber materials for thin film solar cells

Crystal structure and vibrational properties of Cu₂ZnSiSe₄quaternary semiconductor

Characterization of CuInS₂‐Cu₂ZnSnS₄ crystals grown from the melt

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Photoluminescence and Raman scattering characterization of Cu2ZnSiQ4 (Q=S, Se) single crystals

Cited by 33 publications

References 21 publications

Multistep deposition of Cu2Si(S,Se)3 and Cu2ZnSiSe4high band gap absorber materials for thin film solar cells

Multistep deposition of Cu2Si(S,Se)3 and Cu2ZnSiSe4high band gap absorber materials for thin film solar cells

Crystal structure and vibrational properties of Cu2ZnSiSe4quaternary semiconductor

Characterization of CuInS2‐Cu2ZnSnS4 crystals grown from the melt

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Multistep deposition of Cu₂Si(S,Se)₃ and Cu₂ZnSiSe₄high band gap absorber materials for thin film solar cells

Multistep deposition of Cu₂Si(S,Se)₃ and Cu₂ZnSiSe₄high band gap absorber materials for thin film solar cells

Crystal structure and vibrational properties of Cu₂ZnSiSe₄quaternary semiconductor

Characterization of CuInS₂‐Cu₂ZnSnS₄ crystals grown from the melt