Photoluminescence and Raman spectroscopy in porous SiC

Low-dimensional SiC nanostructures: Fabrication, luminescence, and electrical properties

“…In another piece of work, the CL spectra obtained from bulk 6H-SiC show emission at about 600 nm that is shifted to 355-400 nm for the porous samples [67]. Readers are referred to several other reports for more details on luminescence from porous SiC [68][69][70][71][72][73][74].…”

Size dependent photoluminescence of SiC nanocrystals

“…At the same time some prospective applications of SiCbased homoepitaxial [5,6] or GaN-based heteroepitaxial [7,8] device structures formed on PSiC substrates have been presented as well. Despite the technological progress, fundamental properties of SiC NCs and methods of NC characterizations for future technological applications are under developing.…”

Early Attainments of Porous Silicon Carbide Technology: a Bibliographic Digest

“…The most complete and consistent studies were performed within the effort undertaken to develop porous structures based on wide-gap materials SiC and GaN (the latter was obtained for the first time) within the framework of the program "Nanoporous templates for reducing large defects in SiC and GaN, nanocatalysis, magnetic clusters and biotechnology ". As part of these studies with broad international participation, a comprehensive characterization of the properties of porous SiC structures was carried out using almost all available methods for assessing their chemical composition and quality of the crystal structure, electrical and optical properties, as well as the stability of the studied properties under external influence [61][62][63][64][65][66][67][68][69][70][71][72].…”