Photoluminescence and surface photovoltage of ethynyl derivative‐terminated Si(111) surfaces

Yang, F.; Hunger, R.; Rademann, Klaus; Rappich, Jörg

doi:10.1002/pssc.200982474

Cited by 7 publications

(4 citation statements)

References 21 publications

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“…Also, the halogen involved in the Grignard reaction has been shown to play a role in the electrochemical grafting process. 37,38 The kinetics of the reaction are increased by changing the halogen from Br to I. 39 The more electronegative the halogen is, the less efficient the grafting of the methyl groups becomes.…”

Section: Irse Sxps and Pl Measurementsmentioning

confidence: 99%

Near-Ideal Complete Coverage of CD₃ onto Si(111) Surfaces Using One-Step Electrochemical Grafting: An IR Ellipsometry, Synchrotron XPS, and Photoluminescence Study

et al. 2012

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A one-step electrochemical grafting process using Grignard reagents has been performed to achieve a complete monolayer methyl-terminated Si(111) surfaces. Anodic treatment (0.5 mA/cm 2 for 300 s) has been applied to atomically flat Hterminated Si(111) surfaces in methylmagnesium bromide (CH 3 MgBr), methylmagnesium iodide (CH 3 MgI), and methyl-d 3magnesium iodide (CD 3 MgI) to obtain methylated Si(111) surfaces. Infrared spectroscopic ellipsometry (IRSE) clearly reveals a vibrational shift of the symmetric "umbrella" mode characteristic for methyl groups (CH 3 and CD 3 ) with a preferential zorientation. Additionally, X-ray photoelectron spectroscopy using synchrotron radiation (SXPS) shows a well-defined splitting of the Si 2p core level spectra from the methylated Si(111) surfaces. This splitting is more pronounced for the CD 3 -terminated Si(111) surfaces. Moreover, the C 1s spectra also confirm the well-defined structure of the CD 3 -terminated Si(111) surfaces by the presence of C−D vibrational stretching features. Photoluminescence (PL) measurements reveal better surface passivation in the case of CD 3 -terminated Si(111) surfaces. Finally, the quality of the surfaces depends strongly on the counterions. Grignard reagents containing iodine show the best performance in the formation of complete monolayer methylated Si(111) surfaces.

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Section: Irse Sxps and Pl Measurementsmentioning

confidence: 99%

Near-Ideal Complete Coverage of CD₃ onto Si(111) Surfaces Using One-Step Electrochemical Grafting: An IR Ellipsometry, Synchrotron XPS, and Photoluminescence Study

et al. 2012

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Section: Resultsmentioning

confidence: 99%

“…16 RTPL is a fast and non-contact characterization technique to measure passivation and surface recombination of Si during or after processing/modification of Si surfaces at RT. 16,17 The integrated RTPL intensity is inversely proportional to the amount of non-radiative recombination centers. 18 A low level (350 ng/cm −2 ) of pentanoic acid (formula: C 16 H 30 O 4 ) out gassing was detected from FOSBs (made of polycarbonate and thermoplastic elastomer) for the batch A and B with particle issues by GC-MS (gas chromatography-mass spectroscopy).…”

Section: Resultsmentioning

confidence: 99%

Communication—In-Line Detection of Silicon Surface Quality Variation Using Surface Photovoltage and Room Temperature Photoluminescence Measurements

Kim

Han

Yoo³

2016

ECS J. Solid State Sci. Technol.

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Occasionally, in volume device manufacturing, a large number of particles may be generated on cleaned Si wafers. Surface (ionic, organic and/or metallic) contamination is generally suspected. However, conventional chemical analysis techniques for contamination are generally not able to distinguish between Si wafers with good and poor particle performance. No suspicious chemicals and elements were detected from any wafers regardless of characterization techniques. Surface photovoltage (SPV) measurement barely showed the differences between wafers with good and poor particle performance. Multiwavelength room temperature photoluminescence (RTPL) showed significant differences in intensity between them, indicating the presence of surface quality variations. Contamination related yield loss is a major failure mode in advanced silicon (Si) device volume manufacturing.1 Silicon wafers are routinely inspected at various stages using in-line and off-line characterization techniques. Incoming wafers are inspected for ionic, inorganic and metal contamination. As device dimensions are shrinking, contamination related device yield loss tends to increase.Conventional incoming wafer contamination test techniques include ion chromatography (IC) for ionic contamination, gas chromatography with flame ionization detector (GC-FID) for organic contamination and inductive coupled plasma-mass spectroscopy (ICP-MS) for metal contamination.2-4 Other X-ray techniques, such as total X-ray fluorescence (TXRF) and wavelength dispersive X-ray fluorescence (WDXRF) techniques, are also used as in-line metal contamination techniques. 4 Most techniques have detection limits in the range of ppm ∼ ppb.2-4 They are not sensitive enough for certain types of process anomalies.In this study, the root cause of a recent incident generating a large number of particle/defects was investigated using surface photovoltage (SPV) 5 and multiwavelength room temperature photoluminescence (RTPL) 6,7 measurements. Figure 1 shows the flow of Si wafer inspection and process steps. The wafers in front opening shipping boxes (FOSBs) were transferred into front opening unified pods (FOUPs). The wafers were cleaned in deionized (DI) water and the surface inspected for particles and defects. Typically, all wafers pass the inspection. Silicon dioxide (SiO 2 ) films were deposited on 300 mm Si (100) wafers in a plasma enhanced chemical deposition (PECVD) system using liquid tetraethyl orthosilicate (TEOS: Si(OC 2 H 5 ) 4 ) as a source of Si. The Si wafers with PECVD SiO 2 films were inspected for particles and defects again. ExperimentalThree batches (A, B and C) of 25 Si wafers (3 × 25 = 75 wafers) with native oxide (SiO 2 /Si) were allocated for this study. Four wafers per batch were used for chemical analyses (IC for ionic contamination, GC-FID for organic contamination and ICP-MS for metal contamination). For SPV measurements, the contact potential difference (or probe potential), V cpd , was mapped under green light-emitting-diode (LED) illumination at a peak wavelen...

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“…Nevertheless, there is detectable photoluminescence at 1130 nm on flat Si, which can be used as a sensitive probe of the electrical quality of the interface. (84,85) …”

Section: Ecs Transactionsmentioning

confidence: 99%

Characterization of Semiconductor Surfaces during Surface Conditioning and Functionalization

et al. 2011

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Semiconductor surface cleaning, passivation and functionalization are critical steps for applications such as microelectronics, MEMS, sensors, and solar energy harvesting. Progress has relied in part on the development of surface chemical treatments. However, the ability to characterize surfaces at all steps of processing has also been essential and will be emphasized here. This work focuses on the chemical modification of oxide-free, hydrogen-passivated silicon, including wet chemical treatments, atomic layer deposition, and physical deposition. Characterization methods include in-situ infrared absorption spectroscopy, low energy ion scattering, x-ray photoelectron spectroscopy and mass spectrometry, and is complemented by ex-situ spectroscopic ellipsometry and atomic force microscopy.

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Photoluminescence and surface photovoltage of ethynyl derivative‐terminated Si(111) surfaces

Cited by 7 publications

References 21 publications

Near-Ideal Complete Coverage of CD₃ onto Si(111) Surfaces Using One-Step Electrochemical Grafting: An IR Ellipsometry, Synchrotron XPS, and Photoluminescence Study

Near-Ideal Complete Coverage of CD₃ onto Si(111) Surfaces Using One-Step Electrochemical Grafting: An IR Ellipsometry, Synchrotron XPS, and Photoluminescence Study

Communication—In-Line Detection of Silicon Surface Quality Variation Using Surface Photovoltage and Room Temperature Photoluminescence Measurements

Characterization of Semiconductor Surfaces during Surface Conditioning and Functionalization

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Photoluminescence and surface photovoltage of ethynyl derivative‐terminated Si(111) surfaces

Cited by 7 publications

References 21 publications

Near-Ideal Complete Coverage of CD3 onto Si(111) Surfaces Using One-Step Electrochemical Grafting: An IR Ellipsometry, Synchrotron XPS, and Photoluminescence Study

Near-Ideal Complete Coverage of CD3 onto Si(111) Surfaces Using One-Step Electrochemical Grafting: An IR Ellipsometry, Synchrotron XPS, and Photoluminescence Study

Communication—In-Line Detection of Silicon Surface Quality Variation Using Surface Photovoltage and Room Temperature Photoluminescence Measurements

Characterization of Semiconductor Surfaces during Surface Conditioning and Functionalization

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Near-Ideal Complete Coverage of CD₃ onto Si(111) Surfaces Using One-Step Electrochemical Grafting: An IR Ellipsometry, Synchrotron XPS, and Photoluminescence Study

Near-Ideal Complete Coverage of CD₃ onto Si(111) Surfaces Using One-Step Electrochemical Grafting: An IR Ellipsometry, Synchrotron XPS, and Photoluminescence Study