Photoluminescence assessment of B, P, and Al in Si wafers: The problem of sample heating by a laser beam

Pelant, I.; Dian, J.; Matouskova, J.; Valenta, J.; Hála, J.; Ambroz, M.; Vácha, Martin; Kohlová, V.; Vojtěchovský, K.; Kašlík, K.

doi:10.1063/1.352952

Cited by 14 publications

(18 citation statements)

References 13 publications

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“…However, measurement under the high excitation power had a serious error in determining the BE and FE line intensities [6] caused primarily by the rise of the sample temperature. Therefore, we improved the technique by controlling the sample temperature.…”

Section: Introductionmentioning

confidence: 99%

Quantitative analysis of impurities in solar‐grade Si by photoluminescence spectroscopy around 20 K

Iwai

Tajima

Ogura

2010

Phys. Status Solidi (c)

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We report details about the quantitative analysis of B and P impurities in the concentration range between 1 × 1014 and 1 × 1017 cm–3 by photoluminescence (PL) in solar‐grade Si (SOG‐Si). The intensity ratio of impurity‐bound exciton (BE) to free exciton (FE) at 4.2 K was used as a measure of the impurity concentration in the range between 5 × 1010 and 1 × 1015 cm–3 in the standard PL method. We raised the sample temperature to enhance the FE emission, which enabled us to extend the concentration range higher. The sample temperature was accurately determined from the FE‐line shape. We deduced a formula for the determination of the B and P concentrations in the higher range from the BE/FE ratio and the sample temperature (© 2011 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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Section: Introductionmentioning

confidence: 99%

Quantitative analysis of impurities in solar‐grade Si by photoluminescence spectroscopy around 20 K

Iwai

Tajima

Ogura

2010

Phys. Status Solidi (c)

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“…Therefore, a suitable method for the determination of the sample temperature has to be applied. We found this in Pelant et al [ 16 ] This is because stable measurement conditions and evaluation methods are of crucial importance, especially for the question of whether activation of the B Si –Si i defect leads to a reduction in the B TO (BE)/I TO (FE) intensity ratio. [ 10 ]…”

Section: Methodsmentioning

confidence: 59%

“…The sample temperature and the B TO (BE) peak height were determined according to Pelant et al [ 16 ] in this work. Figure is presented to give a short overview of our spectra evaluation method.…”

Section: Methodsmentioning

confidence: 99%

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Low‐Temperature Photoluminescence Investigation of Light‐Induced Degradation in Boron‐Doped CZ Silicon

Peh

Lauer

Flötotto

et al. 2022

Physica Status Solidi (a)

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Light‐induced degradation (LID) in boron‐doped Czochralski grown (CZ) silicon is a severe problem for silicon devices such as solar cells or radiation detectors. Herein, boron‐doped CZ silicon is investigated by low‐temperature photoluminescence (LTPL) spectroscopy. An LID‐related photoluminescence peak is already found while analyzing indium‐doped p‐type silicon samples and is associated with the ASi–Sii defect model. Herein, it is investigated whether a similar peak is present in the spectra of boron‐doped p‐type CZ silicon samples. The presence of change in the photoluminescence signal intensity due to activation of the boron defect is investigated as well. Numerous measurements on boron‐doped samples are made. For this purpose, samples with four different boron doping concentrations are analyzed. The treatments for activation of the boron defect are based on the LID cycle. During an LID cycle, an additional peak or shoulder neither in the areas of the boron‐bound exciton transverse acoustic and nonphonon‐assisted peaks (BTA, BNP) nor in the area of the boron‐bound exciton transverse optical phonon‐assisted peak (BTO) is found. The defect formation also does not lead to a lower photoluminescence (PL) intensity ratio BTO(BE)/ITO(FE).

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“…In this work, the spectra measured on samples with different doping concentrations were modelled based on a PL curve that was measured on a lightly doped silicon wafer ( N A < 1 × 10 15 cm −3 ) which has minimum influence from the dopants at liquid nitrogen temperature . Note that no model was applied to the mentioned PL spectra although in principle it can be modelled with the Maxwell‐Boltzmann distribution . The normalised PL spectrum for this lightly doped sample is provided in a supplementary file, refer to Supporting Information for details.…”

Section: Resultsmentioning

confidence: 99%

Reconstructing photoluminescence spectra at liquid nitrogen temperature from heavily boron‐doped regions of crystalline silicon solar cells

Nguyen

Liu

et al. 2017

Progress in Photovoltaics

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When measured at low temperature (79 K), the photoluminescence (PL) spectra from silicon wafers containing a diffused heavily doped layer exhibit a second peak due to band gap narrowing in the diffused region. This work aims to decompose this peak into components arising from the various doping concentrations within the diffused layer. Whilst the peak position of silicon band-to-band PL spectra changes significantly with the doping concentration in silicon, the shape of the spectra also varies strongly with doping concentrations due to the broadening effects of band-filling and band-tail states. By measuring PL spectra on a range of uniformly heavily doped wafers, we show that these changes in spectral position and shape can be accurately modelled for doping concentrations above 1 × 10 19 cm −3 using simple parameterisations, with minimal impact of variations in excitation intensity or injection level. This allows the PL spectra for a range of arbitrary doping concentrations to be reconstructed. We then show that the PL spectra from a thermally boron-diffused wafer, in which the boron concentration changes with depth, can be reconstructed based on a superposition of PL spectra arising from the layers of different doping beneath the surface. Furthermore, the scaling factor for each layer can be accurately estimated based on the doping profile and the fraction of incident light absorbed in the layer.

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Photoluminescence assessment of B, P, and Al in Si wafers: The problem of sample heating by a laser beam

Cited by 14 publications

References 13 publications

Quantitative analysis of impurities in solar‐grade Si by photoluminescence spectroscopy around 20 K

Quantitative analysis of impurities in solar‐grade Si by photoluminescence spectroscopy around 20 K

Low‐Temperature Photoluminescence Investigation of Light‐Induced Degradation in Boron‐Doped CZ Silicon

Reconstructing photoluminescence spectra at liquid nitrogen temperature from heavily boron‐doped regions of crystalline silicon solar cells

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