Photoluminescence behaviour of Gd2SiO5 phosphor

Tamrakar, Raunak Kumar; Upadhyay, Kanchan

doi:10.1016/j.ijleo.2016.02.059

Cited by 5 publications

(1 citation statement)

References 15 publications

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“…For this characterization, some of the as-grown sample rods were crushed to powder form. In the non-doped sample, some unidentified peaks relative to the reference were observed in the 2θ range of 25-35 deg, and similar diffraction peaks were observed in the Gd 2 SiO 5 (70) and Lu 2 SiO 5 (71) phases. In the Ce-doped samples, no impurity phases were detected, or the amount largely decreased.…”

Section: Resultssupporting

confidence: 56%

Growth, Optical, and Scintillation Properties of (Gd0.4Lu0.6)8Sr2(SiO4)6O2 Crystals

Yanagida¹,

Kato²,

Nakauchi³

et al. 2022

Sensors and Materials

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Non-doped and 0.1, 0.5, 1.0, and 2.0% Ce-doped (Gd 0.4 Lu 0.6 ) 8 Sr 2 (SiO 4 ) 6 O 2 crystals were prepared and their optical and scintillation properties were investigated. Their X-ray diffraction (XRD) patterns confirmed that the Ce-doped samples did not contain an impurity phase, whereas the non-doped one contained some impurity phases such as Gd 2 SiO 5 and Lu 2 SiO 5 . The emission due to 5d-4f transitions of Ce 3+ was observed at 380-650 nm in both the photoluminescence (PL) and scintillation spectra of the Ce-doped samples. The scintillation light yields (LYs) of the 0.5 and 1.0% Ce-doped samples under 241 Am α-ray irradiation were ~230 and ~620 ph/5.5 MeV-α, respectively.

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Section: Resultssupporting

confidence: 56%