2000
DOI: 10.1088/0953-8984/12/49/310
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Photoluminescence characterization of defects in Si and SiGe structures

Abstract: Low-temperature photoluminescence (PL) spectroscopy is a very sensitive tool to investigate the presence of dislocations in Si. The main dislocation-related bands (D1-D4) have been attributed to a wide range of causes, either intrinsic properties of the dislocation or impurity related. PL is a competitive recombination process and the non-radiative processes need to be measured to understand the overall effect of impurities. PL spectroscopy samples a large volume in comparison to the dislocation itself and the… Show more

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Cited by 22 publications
(14 citation statements)
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“…1 They are typically studied by means of radiation-induced secondary signals, such as light-beam ͑LBIC͒, 2,3 electron-beam ͑EBIC͒, 4 and x-ray-beam 5 ͑XBIC͒ induced current techniques, or cathodoluminescence 6 ͑CL͒ and photoluminescence. 7 Such techniques along with sophisticated theoretical modeling 8,9 provide valuable information about the underlying electronic structure of individual defects.…”
Section: Introductionmentioning
confidence: 99%
“…1 They are typically studied by means of radiation-induced secondary signals, such as light-beam ͑LBIC͒, 2,3 electron-beam ͑EBIC͒, 4 and x-ray-beam 5 ͑XBIC͒ induced current techniques, or cathodoluminescence 6 ͑CL͒ and photoluminescence. 7 Such techniques along with sophisticated theoretical modeling 8,9 provide valuable information about the underlying electronic structure of individual defects.…”
Section: Introductionmentioning
confidence: 99%
“…In addition to high-resolution transmission electron microscopy ͑TEM͒, 12 photoluminescence ͑PL͒ and Raman scattering measurements can provide critical information about the Si/SiGe HJ structural properties, including the presence of dislocations by detecting specific PL lines ͑e.g., D-lines, etc.͒, [14][15][16] the chemical composition, and the strain at the heterointerfaces. 5,17 In this work we present results of Raman and PL studies convincingly demonstrating strong spontaneous intermixing in axial Si/Ge NW HJs with preferential SiGe compositions and strain, which is due to the VLS NW formation process, as well as to the differences in Si and Ge lattice constants and their thermal expansion.…”
mentioning
confidence: 99%
“…First, Si substrate itself is known to have defect related PL emission in this part of the spectrum. These well documented emission lines dubbed as D1 through D4 occur $ 1528, 1423, 1317 and 1238 nm [20]. The physical origin of these emission lines have been studied both theoretically [21] and experimentally.…”
Section: Resultsmentioning
confidence: 99%