Photoluminescence characterization of non-radiative defect density on silicon surfaces and interfaces at room temperature

Wet-chemical passivation of atomically flat and structured silicon substrates for solar cell application

“…[8,[13][14][15]. A dye-laser with an excitation wavelength of 743 nm (pulse width 0.5 ns, pulse energy 75 mJ) was used for PL.…”

“…A procedure to calibrate the PL intensity with defect concentration at the SiO 2 /Si interface is described in ref. [15]. Fig.…”

Electrochemical Passivation and Modification of c-Si surfaces

“…To control these states, sensitive methods are mandatory to measure the density of electronic states in the range from 10 13 cm -2 eV -1 to 10 10 cm -2 eV -1 , or below. One possible and easy to use method is pulsed photoluminescence (PL) spectroscopy [4,5,12,13], which can be used to determine the correlation between the electrochemical substrate treatments [4,14,15], the density of recombination active interface states [15], and the stability of different Si surface passivation in ambient air [16]. The Si surface morphology and the type of surface species are usually determined by Atomic Force Microscopy (AFM) and infrared spectroscopic ellipsometry (IRSE) or infrared Fourier-Transform spectroscopy (FTIR) in the attenuated total reflection (ATR) configuration [9,10,24].…”

“…The radiative interband recombination can be measured by photoluminescence (PL) techniques, where the quenching of the PL signal contains information about non-radiative recombination [5,12]. This situation has been used to examine the change in non-radiative surface recombination during surface treatments and processing of c-Si by taking into account that the bulk life time remains constant [5,12].…”

“…This situation has been used to examine the change in non-radiative surface recombination during surface treatments and processing of c-Si by taking into account that the bulk life time remains constant [5,12]. For more details on PL spectroscopy, especially the modulated techniques using continuous wave (cw) lasers, see Chapter 8 in this book.…”