Wet-chemical passivation of atomically flat and structured silicon substrates for solar cell application

Angermann, H.; Rappich, Jörg; Korte, Lars; Sieber, I.; Conrad, E.; Schmidt, M.; Hübener, K.; Polte, Jörg; Hauschild, Jan-Peter

doi:10.1016/j.apsusc.2007.10.099

Cited by 66 publications

(46 citation statements)

References 33 publications

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“…TMAH is an anisotropic etch solution, meaning it only etches along (111) crystal plains. Therefore during the chemical etch, small silicon pyramids are formed on the surfaces, exposing (111) plains, which roughens the surfaces and helps improve the hydrogen coverage when immersed in HF 21,22 . Therefore, with an optimized surface condition, surface recombination can be inhibited when the treated silicon wafers are immersed in HF and subsequently illuminated.…”

Section: Discussionmentioning

confidence: 99%

Light Enhanced Hydrofluoric Acid Passivation: A Sensitive Technique for Detecting Bulk Silicon Defects

Grant

2016

JoVE

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A procedure to measure the bulk lifetime (>100 µsec) of silicon wafers by temporarily attaining a very high level of surface passivation when immersing the wafers in hydrofluoric acid (HF) is presented. By this procedure three critical steps are required to attain the bulk lifetime. Firstly, prior to immersing silicon wafers into HF, they are chemically cleaned and subsequently etched in 25% tetramethylammonium hydroxide. Secondly, the chemically treated wafers are then placed into a large plastic container filled with a mixture of HF and hydrochloric acid, and then centered over an inductive coil for photoconductance (PC) measurements. Thirdly, to inhibit surface recombination and measure the bulk lifetime, the wafers are illuminated at 0.2 suns for 1 min using a halogen lamp, the illumination is switched off, and a PC measurement is immediately taken. By this procedure, the characteristics of bulk silicon defects can be accurately determined. Furthermore, it is anticipated that a sensitive RT surface passivation technique will be imperative for examining bulk silicon defects when their concentration is low (<10 12 cm -3

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Section: Discussionmentioning

confidence: 99%

Light Enhanced Hydrofluoric Acid Passivation: A Sensitive Technique for Detecting Bulk Silicon Defects

Grant

2016

JoVE

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“…The anisotropy etching process by changing the concentration and temperature of the alkaline solution can effectively change AF, which lead to the etch rate in the <111> direction is very low compared to the etch rate in the <100> direction. So that the surface of silicon wafers can form randomly distributed upside pyramids, called as light trapping structures [13]. The structures can effectively reduce the reflection loss from the front surface [14] and enhance the light absorption, so that improve the conversion efficiency of the solar cells.…”

Section: Resultsmentioning

confidence: 99%

Influence of Silicon Texturization on the Photovoltaic Properties of CuPc/n-Si Hybrid Solar Cells

Liu

2012

KEM

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Abstract. Hybrid solar cell based on copper-phthalocyanine (CuPc) and textured Si has been fabricated. Influence of silicon texturization on the photovoltaic properties of CuPc/n-Si hybrid solar cell was studied by current-voltage characteristic curves in the dark and under illumination conditions. As a result, it is found that textured Si can improve significantly the performance of hybrid solar cell. It exhibits a three times increase in the short-circuit current density with respect to that of the standard hybrid solar cell, and the short-circuit current density reaches up to 5.4 mA/cm 2 . In addition, the open-voltage and fill factor are almost constant. The solar-energy conversion efficiency is increased by about three times by the textured Si and achieved about 0.8% under "one Sun" illumination. Furthermore, the possible reasons for this result have been discussed.

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“…According these results the influence of wet-chemical oxidation and oxide removal on the surface morphology of a polished Si(111) substrate can be exemplified by AFM images (2 µm × 2 µm) [33] (Fig. 2).…”

Section: Reduction Of Si Surface Micro-roughness By Wetchemical Oxidamentioning

confidence: 99%

Effect of wet-chemical substrate smoothing on passivation of ultrathin-SiO2/n-Si(111) interfaces prepared with atomic oxygen at thermal impact energies

Gref

Stegemann

2011

Open Physics

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Abstract:Ultrathin SiO 2 layers for potential applications in nano-scale electronic and photovoltaic devises were prepared by exposure to thermalized atomic oxygen under UHV conditions. Wet-chemical substrate pretreatment, layer deposition and annealing processes were applied to improve the electronic Si/SiO 2 interface properties. This favourable effect of optimized wet-chemical pre-treatment can be preserved during the subsequent oxidation. The corresponding atomic-scale analysis of the electronic interface states after substrate pre-treatment and the subsequent silicon oxide layer formation is performed by field-modulated surface photovoltage (SPV), atomic force microscopy (AFM) and spectroscopic ellipsometry in the ultraviolet and visible region (UV-VIS-SE).

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Wet-chemical passivation of atomically flat and structured silicon substrates for solar cell application

Cited by 66 publications

References 33 publications

Light Enhanced Hydrofluoric Acid Passivation: A Sensitive Technique for Detecting Bulk Silicon Defects

Light Enhanced Hydrofluoric Acid Passivation: A Sensitive Technique for Detecting Bulk Silicon Defects

Influence of Silicon Texturization on the Photovoltaic Properties of CuPc/n-Si Hybrid Solar Cells

Effect of wet-chemical substrate smoothing on passivation of ultrathin-SiO2/n-Si(111) interfaces prepared with atomic oxygen at thermal impact energies

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