Photoluminescence emission from a nanofabricated scanning probe tip made of epitaxial germanium

Bollani, Monica; Giliberti, Valeria; Sakat, Emilie; Baldassarre, Leonetta; Celebrano, Michele; Frigerio, Jacopo; Isella, Giovanni; Finazzi, Marco; Melli, Mauro; Weber‐Bargioni, Alexander; Cabrini, Stefano; Biagioni, Paolo; Ortolani, Michele

doi:10.1016/j.mee.2016.03.047

Cited by 1 publication

(1 citation statement)

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“…As a first demonstration of the optical functionality of the epitaxial layers forming our scanning probe tips, we performed PL microspectroscopy recording spectra and spatial maps of the spontaneous emission of a n‐Ge tip at the direct‐gap energy E g = 0.80 eV corresponding to an IR wavelength λ ≈ 1.55 µm. Electromagnetic simulations and initial tests were previously carried out to determine how the micropyramid acts as an effective subwavelength‐sized photon source . We used a confocal microscopy setup with an excitation diode laser source emitting at 785 nm coupled to a high numerical aperture (N.A.…”

Section: Optical Properties Of Epitaxial Germanium‐on‐siliconmentioning

confidence: 99%

Functionalization of Scanning Probe Tips with Epitaxial Semiconductor Layers

et al. 2017

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Functionalized scanning probe tips hold great promise for the controlled delivery of signals from and to selected nanoscale volumes. Here, a new nanotechnological approach for the functionalization of scanning probe tips is presented, targeting the transfer of the optical, electrical, thermal, or chemical properties of precisely characterized epitaxial semiconductor layers to the nanoscale probe tip. Homogeneously doped, strain‐relaxed heteroepitaxial germanium layers, several micrometers thick, are first grown on silicon wafers by low‐energy plasma‐enhanced chemical vapor deposition and then employed to functionalize the probe apex. This choice of materials and growth technique enables the future scalability of the tip functionalization process toward high production volumes. The fabricated probe tips are investigated in a transmission electron microscope, revealing that the crystal structure and the homogeneous doping level of the epitaxial layers are unchanged after the probe‐tip functionalization process. These doped‐germanium tips are also tested as nanoemitters of light at telecom wavelengths (1.55 µm) and applied as scattering probes for near‐field mid‐infrared microscopy. The reported combination of heteroepitaxial growth and a nanofabrication approach can be extended to a variety of epitaxial materials, thus enabling a new generation of scanning probes for the investigation of nanostructured materials and devices.

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Section: Optical Properties Of Epitaxial Germanium‐on‐siliconmentioning

confidence: 99%