Photoluminescence energy and interface chemistry of GaInP/GaAs quantum wells

Mesrine, M.; Massies, J.; Vanelle, E.; Grandjean, N.; Deparis, C.

doi:10.1063/1.120388

Cited by 14 publications

(7 citation statements)

References 17 publications

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“…It thus means that, after GalnP and AHnP layer growth, the In carry-over effect takes place and In atoms tend to segregate at the surface, in such way that they will likely incorporate into the GaAs outer layer. This is a well-known phenomenon described by several authors for the interface GaAs/GalnP [4, 6,22,23]. According to our results, In atoms in the GaAs/AllnP interface would exhibit the same behavior.…”

Section: Interfacesupporting

confidence: 60%

Differences between GaAs/GaInP and GaAs/AlInP interfaces grown by movpe revealed by depth profiling and angle-resolved X-ray photoelectron spectroscopies

López-Escalante

Gabás

García

et al. 2016

Applied Surface Science

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GaAs/GalnP and GaAs/AlInP interfaces have been studied using photoelectron spectroscopy tools. The combination of depth profile through Ar + sputtering and angle resolved X-ray photoelectron spectroscopy provides reliable information on the evolution of the interface chemistry. Measurement artifacts related to each particular technique can be ruled out on the basis of the results obtained with the other technique. GaAs/GalnP interface spreads out over a shorter length than GaAs/AlInP interface. The former could include the presence of the quaternary GalnAsP in addition to the nominal GaAs and GalnP layers. On the contrary, the GaAs/AlInP interface exhibits a higher degree of compound mixture. Namely, traces of P atoms in a chemical environment different to the usual AllnP coordination were found at the top of the GaAs/AlInP interface, as well as mixed phases like AllnP, GalnAsP or AlGalnAsP, located at the interface.

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Section: Interfacesupporting

confidence: 60%

Differences between GaAs/GaInP and GaAs/AlInP interfaces grown by movpe revealed by depth profiling and angle-resolved X-ray photoelectron spectroscopies

López-Escalante

Gabás

García

et al. 2016

Applied Surface Science

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“…The image of In atoms will appear brighter because In atoms are bigger than Ga atoms (also the band gap of InAs is smaller than that of GaAs, which would contribute to a larger tunnel current near In atoms [11]). Indium is known to segregate on InGaP surface [13,14], and thus it will likely incorporate into following GaAs layer. It was proposed that the exchange of P atoms by As atoms is the main reason for degradation of interface abruptness, especially for GaAs-on-InGaP interfaces [6].…”

mentioning

confidence: 99%

Cross-sectional scanning tunneling microscopy and spectroscopy of InGaP/GaAs heterojunctions

Yang

Feenstra

Semtsiv

et al. 2004

Applied Physics Letters

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Compositionally abrupt InGaP/GaAs heterojunctions grown by gas-source molecular beam epitaxy have been investigated by cross-sectional scanning tunneling microscopy and spectroscopy. Images inside the InGaP layer show non-uniform In and Ga distribution. About 1.5 nm of transition region at the interfaces is observed, with indium carryover identified at the GaAs-on-InGaP interface. Spatially resolved tunneling spectra with nanometer spacing across the interface were acquired, from which band offsets (revealing that nearly all of band offset occurs in the valence band) were determined.Heterojunctions between In x Ga 1-x P (hereafter InGaP) and GaAs have attracted attention recently because of their device applications. It has been predicted and confirmed that this system should have a large fraction of the total energy gap discontinuity occurring in the valence band, which improves the electron injection efficiency of an heterojunction bipolar transistor (HBT) [1]. However, there exist discrepancies between band offsets results obtained by different techniques for samples grown by different methods/groups. It is known that properties of the interface depend sensitively on the detailed growth conditions [2][3][4][5][6]. Prior experimental techniques used in this system are not spatially resolved and in order to better understand this material system a study of the atomic-scale structural and electronic properties of the junctions is useful.In this work we use scanning tunneling spectroscopy (STS) to study the spatial variation of the InGaP/GaAs electronic band structure at nanometer length scales. The advantage of such work is that band offsets can be measured while simultaneously imaging the atomic-scale structural properties of the interfaces. Due to the experimental challenges of measuring band offsets by STS, there are only a few prior examples of such work, most notably on AlGaAs/GaAs [7]. Liu et al. have used cross-sectional STM to study the ordering effect of InGaP [8]. In this paper, we report cross-sectional STM and STS studies of compositionally abrupt InGaP/GaAs heterojunctions prepared by gassource molecular beam epitaxy (GSMBE). Images inside the InGaP layer reveal a random arrangement of In and Ga atom. This result is consistent with PL results and growth conditions for similar samples that indicate a nearly fully disordered InGaP layer [9]. It is found that GaAs-on-InGaP interface has a slightly wider transition region and more interface intermixing than the InGaP-on-GaAs interface. Both interfaces exhibit InGaAs-like properties. Indium outdiffusion from InGaP into GaAs at the GaAs-onPublished in Appl. Phys. Lett. 84, 227 (2004).

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“…[22][23][24][25] Furthermore, the asymmetric nature of the 1.25-1.45 eV emission in Figs. Its broad energy distribution may be due to a range of incorporated In concentrations.…”

Section: Discussionmentioning

confidence: 82%

Atomic diffusion and interface electronic structure at In0.49Ga0.51P∕GaAs heterojunctions

Smith¹,

Lueck²,

Ringel³

et al. 2008

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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We have performed cross-sectional cathodoluminescence spectroscopy and secondary ion mass spectrometry measurements of lattice-matched, SiO x -capped In 0.49 Ga 0.51 P / GaAs double heterostructures ͑DHs͒ in order to investigate the relation between chemical interactions and localized electronic states at the epitaxial heterojunction. We measure atomic diffusion of over 100 nm resulting from anneals ranging from 650 to 850°C. A 20 meV increase in the near-band-edge ͑NBE͒ emission energy of InGaP is observed after the highest temperature anneals. This increase is consistent with an increase in the Ga concentration of the ternary layer as a result of diffusion from neighboring GaAs layers. Additionally, we observe InGaP / GaAs interface-localized features at ϳ1.49 and ϳ1.37 eV. The intensity of these emissions relative to the band-edge emission of the underlying layer depends sensitively on the anneal temperature and corresponding diffusion. These results reveal a correlation between cross diffusion and defect emission at InGaP / GaAs interfaces. They clarify the nature of the cross diffusion and reactions that occur at these interfaces in SiO x -capped structures, and those may be expected to occur during interface growth or processing at elevated temperatures. It is demonstrated that these chemical effects can have a significant impact on the electronic structure of lattice-matched III-V heterostructures.

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Photoluminescence energy and interface chemistry of GaInP/GaAs quantum wells

Abstract: Photoluminescence investigation of GaInP/GaAs multiple quantum wells grown on (001) and (311) B GaAs surfaces by gas source molecular beam epitaxy

Cited by 14 publications

References 17 publications

Differences between GaAs/GaInP and GaAs/AlInP interfaces grown by movpe revealed by depth profiling and angle-resolved X-ray photoelectron spectroscopies

Differences between GaAs/GaInP and GaAs/AlInP interfaces grown by movpe revealed by depth profiling and angle-resolved X-ray photoelectron spectroscopies

Cross-sectional scanning tunneling microscopy and spectroscopy of InGaP/GaAs heterojunctions

Atomic diffusion and interface electronic structure at In0.49Ga0.51P∕GaAs heterojunctions

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