Photoluminescence enhancement of Si nanocrystals embedded in SiO2 by thermal annealing in air

Li, Yanli; Liang, Peipei; Hu, Zhiyun; Guo, Shuang; Hua, Cunqing; Huang, Feiling; Sun, Jian; Xu, Ning; Wu, Jiada

doi:10.1016/j.apsusc.2014.09.123

Cited by 10 publications

(7 citation statements)

References 34 publications

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“…The free-standing Si-NCs obtained after filtering usually emit blue light instead of red light. Considering that Si-NCs bonded to bulk SiO 2 emit light in the red region [5,16,23], it is suggested that small-sized bare Si-NCs might be poorly passivated by oxygen [29]. We coated the bare Si-NCs with SOG, followed by thermal annealing to modulate the bonding between Si and O atoms.…”

Section: Methodsmentioning

confidence: 99%

“…Si light source is of key importance for integrated Si optoelectronics [1][2][3][4][5][6][7][8][9][10][11][12][13]. As a promising material for Si light sources, Si nanocrystals, or Si-NCs, have received a lot of interest concerning enhancements of their light emissions and optical gains [14][15][16][17][18][19][20][21][22][23]. Meanwhile, tuning the wavelength of light emission has also attracted considerable attention for the flexibility of application such as multi-wavelength optical communication [24][25][26][27][28].…”

Section: Introductionmentioning

confidence: 99%

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White light emission and optical gains from a Si nanocrystal thin film

et al. 2015

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We report a Si nanocrystal thin film consisting of free-standing Si nanocrystals, which can emit white light and show positive optical gains for its red, green and blue (RGB) components under ultraviolet excitation. Si nanocrystals with ϕ = 2.31 ± 0.35 nm were prepared by chemical etching of Si powder, followed by filtering. After being mixed with SiO2 sol-gel and thermally annealed, a broadband photoluminescence (PL) from the thin film was observed. The RGB ratio of the PL can be tuned by changing the annealing temperature or atmosphere, which is 1.00/3.26/4.59 for the pure white light emission. The origins of the PL components could be due to differences in oxygen-passivation degree for Si nanocrystals. The results may find applications in white-light Si lasing and Si lighting.

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Section: Methodsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

White light emission and optical gains from a Si nanocrystal thin film

et al. 2015

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“…However, the situation changed for overtreatment. SiNCs embedded SiO 2 samples were first annealed in N 2 atmosphere at 1,100°C and then passivated in dry air flow at temperatures ranging from 400 to 800°C for 15-90 min (Li et al, 2014a). When the passivation temperature was below 600°C, the effect was roughly the same as hydrogen passivation: the PL intensity was first improved and then gradually saturated as the temperature and passivation time increased.…”

Section: Defectsmentioning

confidence: 99%

“…Therefore, passivation is an excellent choice if the proper conditions are selected, to strengthen the PL for the merits of both the enhancement of PL intensity and the conservation of SiNCs' structure (Figure 4B) (López et al, 2002;Li et al, 2014a). However, the passivation procedure complicates the production process.…”

Section: Defectsmentioning

confidence: 99%

Thermal Disproportionation for the Synthesis of Silicon Nanocrystals and Their Photoluminescent Properties

Wang

Hong

et al. 2021

Front. Chem.

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In the past decades, silicon nanocrystals have received vast attention and have been widely studied owing to not only their advantages including nontoxicity, high availability, and abundance but also their unique luminescent properties distinct from bulk silicon. Among the various synthetic methods of silicon nanocrystals, thermal disproportionation of silicon suboxides (often with H as another major composing element) bears the superiorities of unsophisticated equipment requirements, feasible processing conditions, and precise control of nanocrystals size and structure, which guarantee a bright industrial application prospect. In this paper, we summarize the recent progress of thermal disproportionation chemistry for the synthesis of silicon nanocrystals, with the focus on the effects of temperature, Si/O ratio, and the surface groups on the resulting silicon nanocrystals’ structure and their corresponding photoluminescent properties. Moreover, the paradigmatic application scenarios of the photoluminescent silicon nanocrystals synthesized via this method are showcased or envisioned.

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“…Оптические свойства кремниевых нанокластеров в различных диэлектрических матрицах представляют значительный интерес для оптоэлектроники, посколь-ку в таких структурах, в отличие от объемного кремния, наблюдается эффективная фотолюминесцен-ция (ФЛ) [1][2][3][4][5][6][7][8][9][10][11][12][13]. В частности, перспективным является создание светоизлучающих элементов на основе кремни-евых нанокристаллов в кремнийсодержащей матрице и последующее их интегрирование в устройства нанофото-ники [1,3].…”

Section: Introductionunclassified

Фотолюминесценция Аморфных И Кристаллических Кремниевых Нанокластеров В Сверхрешетках Из Нитрида И Оксида Кремния

Шулейко¹,

Заботнов²,

Жигунов³

et al. 2017

Физика И Техника Полупроводников

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Исследованы фотолюминесцентные свойства сверхрешеток на основе нитрида и оксида кремния, изготовленных методом плазмохимического осаждения из газовой фазы. В структурах, отожженных при температуре 1150oC, зарегистрированы пики фотолюминесценции в районе 1.45 эВ, обусловленные рекомбинацией экситонов в кремниевых нанокристаллах, формируемых в результате отжига. Наряду с этим были зарегистрированы пики, вызванные рекомбинацией на дефектах, существующих на границе нанокристаллов и матрицы нитрида кремния. Структуры, отожженные при температуре 900oC, имеют ряд пиков фотолюминесценции в диапазоне 1.3-2.0 эВ, обусловленных как дефектами, так и рекомбинацией экситонов в аморфных кремниевых нанокластерах, формирующихся при используемой температуре отжига. Наблюдаемые особенности всех спектров фотолюминесценции подтверждаются характером ее кинетики. DOI: 10.21883/FTP.2017.02.44106.8323

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Photoluminescence enhancement of Si nanocrystals embedded in SiO2 by thermal annealing in air

Cited by 10 publications

References 34 publications

White light emission and optical gains from a Si nanocrystal thin film

White light emission and optical gains from a Si nanocrystal thin film

Thermal Disproportionation for the Synthesis of Silicon Nanocrystals and Their Photoluminescent Properties

Фотолюминесценция Аморфных И Кристаллических Кремниевых Нанокластеров В Сверхрешетках Из Нитрида И Оксида Кремния

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