Photoluminescence fatigue and inhomogeneous line broadening in semi-insulating Tl<sub>6</sub>SeI<sub>4</sub>single crystals

Kostina, Svetlana S.; Peters, John A.; Lin, Wenwen; Chen, Pice; Liu, Zhifu; Wang, P L; Kanatzidis, M. G.; Wessels, Bruce W.

doi:10.1088/0268-1242/31/6/065009

Cited by 17 publications

(24 citation statements)

References 41 publications

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“…(f) Statistics of electron rise times at 100 V bias for a TlSn 2 I 5 detector from α-particles. Among all the new candidates that have been proposed in the past decade, − TlSn 2 I 5 is among the top in terms of promise in view of its ease of crystal growth and initial photoresponse properties.…”

Section: Resultsmentioning

confidence: 99%

TlSn₂I₅, a Robust Halide Antiperovskite Semiconductor for γ-Ray Detection at Room Temperature

et al. 2017

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The semiconductor TlSn 2 I 5 with a two-dimensional crystal structure and an antiperovskite topology is a promising novel detection material. The compound crystallizes in the I4/mcm space group, has an indirect band gap of 2.14 eV, and melts congruently at 314 °C. Electronic band structure calculations reveal that the most facile electron transport is along the ab layered plane. Compared to CH 3 NH 3 PbX 3 (X = Br, I), TlSn 2 I 5 features higher long-term stability, higher photon stopping power (average atomic number of 55), higher resistivity (∼10 10 Ω•cm), and robust mechanical properties. Centimeter-size TlSn 2 I 5 single crystals grown from the melt by the Bridgman method can be used to fabricate detector devices, which detect Ag Kα X-rays (22 keV), 57 Co γ-rays (122 keV), and 241 Am α-particles (5.5 MeV). The mobility-lifetime product and mobility for electrons were estimated to be 1.1 × 10 −3 cm 2 •V −1 and 94 ± 16 cm 2 •V −1 •s −1 , respectively. Unlike other halide perovskites, TlSn 2 I 5 shows no signs of ionic polarization under longterm, high-voltage bias.

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Section: Resultsmentioning

confidence: 99%

TlSn₂I₅, a Robust Halide Antiperovskite Semiconductor for γ-Ray Detection at Room Temperature

et al. 2017

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“…The optical transmission spectrum was measured on a Lambda 1050 UV–vis-IR spectrophotometer in the range of 300–1500 nm. For photoluminescence (PL) spectroscopy measurements, the setup was identical to the one reported previously . The samples were illuminated using a CW 405 nm semiconductor laser source (0.8 mm laser spot diameter) with power below 5 mW (<1000 mW/cm 2 ).…”

Section: Methodsmentioning

confidence: 99%

“…For photoluminescence (PL) spectroscopy measurements, the setup was identical to the one reported previously. 31 The samples were illuminated using a CW 405 nm semiconductor laser source (0.8 mm laser spot diameter) with power below 5 mW (<1000 mW/cm 2 ).…”

Section: T H Imentioning

confidence: 99%

Resolving the Energy of γ-Ray Photons with MAPbI₃ Single Crystals

et al. 2018

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Halide perovskites exhibit remarkably high-performance as semiconductors compared to conventional materials because of an unusually favorable combination of optoelectronic properties. We demonstrate here that solution-grown single-crystals of organic–inorganic hybrid perovskite CH3NH3PbI3 (MAPbI3), implemented in a Schottky-type device design, can produce outstanding hard radiation detectors with high spectral response and low dark current for the first time. Schottky-type MAPbI3 detector achieves an excellent energy resolution of 6.8% for 57Co 122 keV gamma ray. The high detector performance is achieved due to the balanced charge collection efficiency for both electrons and holes, reflected in the high mobility-lifetime (μτ) products of both carriers (∼0.8 × 10–3 cm2/V). MAPbI3 also demonstrates remarkably long electron and hole lifetimes (τe = 10 μs and τh = 17 μs) and impressive operational stability over time. Furthermore, dual-source detection of α particle (5.5 MeV) and γ-ray (59.5 keV) from the 241Am radiation source is achieved simultaneously by Schottky-type MAPbI3 detector. These results reveal the great potential of MAPbI3 as a high-performance, low-cost radiation detection material.

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“…According to recent studies, thallium chalcogenides and ternary chalcohalide hybrids (Tl 6 SeI 4 ,Tl 6 SI 4 ) have potential applications, such as radiation detectors, and form a new class of inorganic semiconductor detector materials [49][50][51][52][53][54][55][56][57]. These compounds and phases on their basis are far more promising than CZT (Cd 0.9 Zn 0.1 Te) of industrial importance -the most sensitive detector material for functional indications, and are one of the most promising materials for new generation electronic devices.…”

Section: Introductionmentioning

confidence: 99%

Physicochemical Aspects of Ternary and Complex Phases Development Based on Thallium Chalcohalides

Бабанлы¹,

Тагиев²

2018

Chemical Problems

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The results of physical and chemical investigation of some ternary and more complex systems which are of interest in terms of obtaining thallic chalcohalides and new multicomponent phases on their basis have been systematized and analyzed in the review paper. This class of inorganic substances is of scientific and practical interest as promising functional materials with thermoelectric, optical, magnetic, sensor and detector properties. The literature data on crystal structure, thermodynamic and some physico-chemical properties of thallium chalcohalides and intermediate phases on their basis have been investigated.

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Photoluminescence fatigue and inhomogeneous line broadening in semi-insulating Tl₆SeI₄single crystals

Cited by 17 publications

References 41 publications

TlSn₂I₅, a Robust Halide Antiperovskite Semiconductor for γ-Ray Detection at Room Temperature

TlSn₂I₅, a Robust Halide Antiperovskite Semiconductor for γ-Ray Detection at Room Temperature

Resolving the Energy of γ-Ray Photons with MAPbI₃ Single Crystals

Physicochemical Aspects of Ternary and Complex Phases Development Based on Thallium Chalcohalides

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Photoluminescence fatigue and inhomogeneous line broadening in semi-insulating Tl6SeI4single crystals

Cited by 17 publications

References 41 publications

TlSn2I5, a Robust Halide Antiperovskite Semiconductor for γ-Ray Detection at Room Temperature

TlSn2I5, a Robust Halide Antiperovskite Semiconductor for γ-Ray Detection at Room Temperature

Resolving the Energy of γ-Ray Photons with MAPbI3 Single Crystals

Physicochemical Aspects of Ternary and Complex Phases Development Based on Thallium Chalcohalides

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Product

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Photoluminescence fatigue and inhomogeneous line broadening in semi-insulating Tl₆SeI₄single crystals

TlSn₂I₅, a Robust Halide Antiperovskite Semiconductor for γ-Ray Detection at Room Temperature

TlSn₂I₅, a Robust Halide Antiperovskite Semiconductor for γ-Ray Detection at Room Temperature

Resolving the Energy of γ-Ray Photons with MAPbI₃ Single Crystals