Photoluminescence from anodized and thermally oxidized porous germanium

Miyazaki, Seiichi; Sakamoto, K.; Shiba, K.; Hirose, Masataka

doi:10.1016/0040-6090(94)05630-v

Cited by 71 publications

(46 citation statements)

References 9 publications

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“…Although the formation of porous silicon in HF has long been known, [1][2][3][4] the discovery of visible luminescence from porous silicon 5 led to a significant increase in research in the formation of porosity in other semiconductors. The list of semiconductors that can now be rendered porous electrochemically includes germanium, [6][7][8] GaP, [9][10][11] InP, [12][13][14][15][16][17] GaAs, [18][19][20][21][22] GaN, [23][24][25] and many others. A range of different porous structures can be obtained in these semiconductors by variation of electrolyte type and concentration, 14,26 carrier concentration and substrate orientation, 27,28 as well as the current density or potential at which the porous structures are formed.…”

Section: Introductionmentioning

confidence: 99%

Electrochemical Pore Formation in InP: Understanding and Controlling Pore Morphology

et al. 2017

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Pores formed anodically in InP at different temperatures, electrolyte (KOH) concentrations, carrier concentrations and current densities exhibit significant pore width variations. The pore width decreases as the temperature, carrier concentration or current density are increased. The pore width also decreases when the KOH concentration is increased up to 9 mol dm -3 , but increases slightly as the concentration is increased further. These pore width variations are explained by a three-step model for pore formation based on competition in kinetics between the different steps in the etching mechanism. The variation of pore width with current density is explained explicitly in terms of the crystallographic etching mechanism and this is supported by observation of the different crystallographic features of the pore cross section at different current densities.

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Section: Introductionmentioning

confidence: 99%

Electrochemical Pore Formation in InP: Understanding and Controlling Pore Morphology

et al. 2017

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“…It is still a challenge to produce porous, semiconducting and luminescent Ge films in a simple and robust way, allowing their subsequent processing and integration into working devices [1][2][3][14][15][16][17][18][19][20]. The porous structure plays an important role in the visible PL emission of the indirect bandgap semiconductors, such as Si and Ge [4][5][6][14][15][16][17][18][19][20]. Formation of porous structures likely enhances electrical resistivity and carrier scattering rate, hindering measurements of the transport properties; it also may decrease the adhesion between the film and substrate.…”

Section: Introductionmentioning

confidence: 99%

“…It has been particularly challenging to synthesize group IV materials, such as Si and Ge, primarily owing to their strong covalent bonding and the need for high temperatures to promote crystallization [11][12][13]. Anodization and electrochemical etching [3,[14][15][16][17][18], spark processing [19,20] and inductively coupled plasma chemical vapor deposition (ICPCVD) [2,21] have been used to prepare porous Ge films. It is still a challenge to produce porous, semiconducting and luminescent Ge films in a simple and robust way, allowing their subsequent processing and integration into working devices [1][2][3][14][15][16][17][18][19][20].…”

Section: Introductionmentioning

confidence: 99%

“…Anodization and electrochemical etching [3,[14][15][16][17][18], spark processing [19,20] and inductively coupled plasma chemical vapor deposition (ICPCVD) [2,21] have been used to prepare porous Ge films. It is still a challenge to produce porous, semiconducting and luminescent Ge films in a simple and robust way, allowing their subsequent processing and integration into working devices [1][2][3][14][15][16][17][18][19][20]. The porous structure plays an important role in the visible PL emission of the indirect bandgap semiconductors, such as Si and Ge [4][5][6][14][15][16][17][18][19][20].…”

Section: Introductionmentioning

confidence: 99%

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Fabrication and characteristics of porous germanium films

Chen

Zhang

Zang

et al. 2009

Science and Technology of Advanced Materials

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Porous germanium films with good adhesion to the substrate were produced by annealing GeO 2 ceramic films in H 2 atmosphere. The reduction of GeO 2 started at the top of a film and resulted in a Ge layer with a highly porous surface. TEM and Raman measurements reveal small Ge crystallites at the top layer and a higher degree of crystallinity at the bottom part of the Ge film; visible photoluminescence was detected from the small crystallites. Porous Ge films exhibit high density of holes (10 20 cm −3 ) and a maximum of Hall mobility at ∼225 K. Their p-type conductivity is dominated by the defect scattering mechanism.

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“…Most of the studies on light emission from group-IV semiconductors focused heavily on porous silicon, [1][2][3] silicon/silicon dioxide superlattices, 4 silicon nanoprecipitates in silicon dioxide 5 and silicon-rich silicon/germanium quantum wells. 6 A very little attention is devoted to porous Ge 7 or nanocrystallite (nc)-Ge. 8 As of today, the photoluminescence spectra from Ge films have shown mainly a broad peak in the 2.1-2.4 eV energy range.…”

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confidence: 99%

Photoluminescence of Ultraviolet Initiated Green Emission from Electrochemically Deposited Germanium Films on (100) Silicon

Jawad

Hashim

Ali

et al. 2014

J. Electrochem. Soc.

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Photoluminescence (PL) spectra of the germanium deposited nanostructures grown on silicon (Si) substrate showed a weak UV peaked at 353 nm (∼3.4 eV), violet-blue at 402 nm (∼3.1 eV), and a broad green band emission in the 470-500 nm (∼2.46 eV) range at room temperature when illuminated by 325 nm line laser beam. Electrochemical growth was monitored and evaluated using scanning electron microscopy (SEM), Raman spectroscopy, and PL. SEM images indicated varied current-density-dependent stoichiometry. The origin of the emissions is attributable to GeO 2 defect centers, exciton confined in a quantum well, and to unbridged oxygen hole centers. These results perhaps are an indication that the blue luminescence is correlated with the formation of Ge (or GeO 2 ) nanocrystals. The radiative recombinations of excitons confined in the nanocrystals are assessed with a possibility of contributing to the shift in the peak.

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Photoluminescence from anodized and thermally oxidized porous germanium

Cited by 71 publications

References 9 publications

Electrochemical Pore Formation in InP: Understanding and Controlling Pore Morphology

Electrochemical Pore Formation in InP: Understanding and Controlling Pore Morphology

Fabrication and characteristics of porous germanium films

Photoluminescence of Ultraviolet Initiated Green Emission from Electrochemically Deposited Germanium Films on (100) Silicon

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