Hemispherical silicon quantum dots with an average height of 6.3, 3.3 or 1–2 nm covered with an ultrathin SiO2 layer have been spontaneously formed on SiO2/Si(100) and quartz substrates by the thermal decomposition of pure silane at low pressure. It is found that the optical absorption edge determined from photothermal deflection spectroscopy exhibits blue shifts from 1.9 to 2.5 eV when the average dot size was decreased from 6.3 to 1–2 nm and correspondingly, the luminescence peak energy increases from 1.2 to 1.4 eV at room temperature. The large Stokes shift suggests that the localized, radiative recombination centers existing presumably in the SiO2/Si dot interface are responsible for the efficient, room-temperature luminescence from the silicon quantum dots.
Conventional AIAI deposition TiNRi/AICu/TiN/Ti: 50/25/450/40/20 nm AI etching (Structure A) Cover SiO, deposition By HDP-CVD SiO,-CMP Cover SiO, etching (Structure B) H, anneal (Structure C) Kazutoshi Shiba and Yoshihiro Hayashi Damascene AI PECVD-Si0, deposition SiO,: ,700 nm Si0,-RIE AI deposition AICuiTi: 1000/30 nm Cover SiO, deposition By Conventional PECVD Cover SiO, etching (Structure D) H, anneal (Structure E)
AbstractPlasma-charging damage on nMOSFETs with conventional or damascene A1 interconnects has been investigated. High density plasma (HDP) CVD process for filling SiO, between narrow pitched metal lines gives serious damage on MOSFETs, resulting in increase of the gate leakage current and junction leak (low. In the case of damascene interconnect without HDP-SiO, deposition process, no junction leak is observed, and the chip yield is improved twice to the conventional one. The damascene interconnect is a key for keeping the chip-yield high for deep sub-quarter-micron MOSFETs.
We establish hydrodynamic equations which describe the shear dynamics of a supercooled liquid composed of anisotropic molecules. We use these equations to analyse 90 • depolarized light scattering experiments performed in supercooled metatoluidine, and show that the shear viscosity values extracted from the analysis are consistent with independent static measurements performed in the same temperature range. 0953-8984/99/SA0139+08$19.50
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