Photoluminescence from GaInP layers and GaInP/AlGaInP quantum wells grown by molecular beam epitaxy with varying growth temperature, phosphorus gas pressure, and substrate orientation

Optical properties of digital-alloy In0.49(Ga1−zAlz)0.51P/GaAs and InGaP/In0.49(Ga1−zAlz)0.51P multi-quantum wells grown by molecular-beam epitaxy

“…4(c), it was observed that the interfaces in the MQW structure were clear. In 0.49 (Ga 0.6 Al 0.4 ) 0.51 P layer and In 0.49 Ga 0.51 P/ In 0.49 (Ga 0.6 Al 0.4 ) 0.51 P MQW through digital-alloy were successfully grown with good optical quality, as compared with results by Toikkanen et al [4] and Dong et al [15]. These results mean that the band gap control through a digital-alloy method can easily realize graded composition layers and separate-confinement heterostructure (SCH) with linear and graded index in the laser diode structures.…”

“…PL peak energy of 1.911 eV and line width of 38 meV were obtained, respectively. Recently, Toikkanen et al [4] reported that the line width of $44 meV was obtained from tensile-strained In 0.42 Ga 0.58 P(6.5 nm)/In 0.49 (Ga 0.6 Al 0.4 ) 0.51 P MQW grown on GaAs (1 0 0) using MBE system. Moreover, it was reported by Dong et al [15] that the line width of 35 meV was obtained from In 0.51 Ga 0.49 P(10 nm)/In 0.48 (Ga 0.6 Al 0.4 ) 0.52 P MQW grown on GaAs (1 0 0) 71 off toward (1 1 1)A to suppress the spontaneous ordering in InGaP and InGaAlP using LP-MOCVD system.…”

“…High-power semiconductor lasers operating at 630-650 nm wavelength range have been investigated intensively and they have been improved for applications, such as the digital versatile disk (DVD) player, bar-code readers and laser pointers [1][2][3][4]. In most cases, InGaAlP lasers are grown by metalorganic chemical vapor deposition (MOCVD) [5][6][7] and a few results for high-quality InGaAlP material grown by molecular beam epitaxy (MBE) have been reported.…”

Metamorphic growth of tensile strained GaInP on GaAs substrate

“…Long range ordering in GaInP is a significant effect that must be taken into account when such samples are studied. In our earlier study [14] we showed that the ordering parameter Z for lattice matched bulk GaInP is 0.34-0.35 at growth temperature of 523 1C determining a red shift via ordering of about 60 meV (calculated at 20 K).…”

“…8 shows the calculated dependence between the PL wavelength of Ga x In 1 À x P and Ga composition, x, in fully relaxed and fully strained cases. Difference between calculated (dashed lines) and experimental curves (solid lines) is assumed to arise from the ordering effect [14]. Four experimental PL spectra of partially ordered samples are shown in insets.…”