Metamorphic growth of tensile strained GaInP on GaAs substrate

Epitaxy and Device Properties of InGaAs Photodetectors with Relatively High Lattice Mismatch

“…To acquire high-device performance wavelength-extended InGaAs PD on InP substrate, the growth temperature should be optimized for each layer. Generally, a high T g can reduce the incorporation of background impurities into the epilayers during the growth process, whereas the higher T g will enhance the In segregation on the surface of InGaAs with a high In content [16], which will cause a poor surface and nonuniformity of compositions in the epilayer and then increase the dark current of PDs. In this work, T g was optimized for the InAlAs buffer layer and InGaAs absorption layer, respectively [17].…”

“…Each structure consisted of a 1.95-μm N + (N = 3 × 10 18 cm −3 ) InAlAs buffer layer and a 2-μm-thick n − (n = 3 × 10 16 cm −3 ) In 0.84 Ga 0.16 As absorption layer followed by a P + (P = 7 × 10 18 cm −3 ) 600-nm-thick In 0.84 Al 0. 16 As cap. The In profiles and T g at stages A, B, C, and D of the four PD structures were shown in Figure 1.…”

“…In 0.84 Ga 0. 16 As PD structures with and without compositional overshoot in the linearly graded InAlAs MBLs were grown. The effects on the material properties and the lattice relaxation degree have been investigated in detail [28].…”

“…The In composition x in the In x Al 1−x As buffer of this structure was graded from 0.52 to 0.78 for sample 1 and from 0.52 to 0.82 for sample 2. For the In 0.84 Ga 0 16. As PD structures, theIn composition x in the In x Al 1−x As buffer was designed grading from 0.52 to 0.84 for sample 3 and from 0.52 to 0.88 for sample 4, as shown inFigure 10(c) and (d), respectively.…”

Low-Temperature and Metamorphic Buffer Layers

“…Lowtemperature growth decreases the surface roughness [35,51,100,106,131,132], and this is expected because the reduced surface mobility of adatoms would decrease surface roughening by either mechanism. This model predicts increased indium segregation and, therefore, surface roughness, with increasing thickness or grading coefficient.…”