Photoluminescence from SiN_xO_y films deposited by reactive sputtering

Luminescence from Si-Implanted SiO2-Si3N4 Nano Bi-Layers for Electrophotonic Integrated Si Light Sources

“…Moreover, this band matches a combination of different relative contributions by a variety of well-known centers observed in silicon nitrides and oxynitrides [ 5 , 24 , 25 , 26 , 27 ]. Emission within the same wavelengths is likely to be caused by the contribution of emission from centers introduced by nitrogen dangling bonds in SiN O films [ 26 , 27 ] (this is the only significant contribution to luminescence in sample R ), transitions between the silicon nitride conduction band and defect levels of the type ≡Si [ 24 ], and defect levels of either the type ≡Si [ 27 ] or ≡Si [ 25 ].…”

A Review: Preparation, Performance, and Applications of Silicon Oxynitride Film

“…For these mentioned applications, SiN x O y is a more promising candidate, in addition, it has tunable optical and electrical performance. By varying the chemical composition of SiN x O y , during the fabrication process, its refractive index and dielectric constant will be tuned [22,23,24]. Except the tunable refractive index, SiN x O y also has adjustable thin film stress [25] and exhibits photoluminescence (PL) in the visible light range at room temperature [26].…”

Mapping of a Ni/SiN x /n-SiC structure using scanning internal photoemission microscopy

“…21) On the other hand, many researchers have examined the characteristics of SiN x films deposited by reactive sputtering in recent years. [22][23][24][25] Reference 22, obtained reactively sputtered SiN x films with a high density, high refractive index, and low hydrogen content at low deposition temperatures. However, the evaluation of the electrical characteristics of these sputtered SiN x films is still insufficient.…”