Photoluminescence in strained GaSb/InGaSb quantum wells by metalorganic chemical vapor deposition

Su, Yan Kuin; Juang, Fuh−Shyang; Su, Chung‐Ren

doi:10.1063/1.351255

Cited by 14 publications

(8 citation statements)

References 29 publications

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“…The dominating narrow (≈10 meV) peak at 0.750 eV originates from the (Ga, In)Sb QWs. The ratio between this transition and those related to the GaSb barriers is greater than 40, which constitutes a significant improvement compared with previously reported results [12,13].…”

Section: Optimum Growth Temperatures Of (Ga In)sb/gasb Qwscontrasting

confidence: 43%

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Long-wavelength (Ga, In)Sb/GaSb strained quantum well lasers grown by molecular beam epitaxy

Bertru

Баранов

Cuminal

et al. 1998

Semicond. Sci. Technol.

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The molecular beam epitaxy growth of strained (Ga, In)Sb/GaSb quantum wells is investigated. In a narrow range of growth conditions, (Ga, In)Sb quantum well structures exhibiting excellent structural properties as well as intense and narrow photoluminescence transitions are obtained. Stimulated emission at 1.98 µm is observed at room temperature from laser diodes with Ga 0.74 In 0.26 Sb/GaSb strained quantum wells as the active zone. The lasers exhibit threshold current densities as low as 280 A cm −2 and a characteristic temperature of 75 K.

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Section: Optimum Growth Temperatures Of (Ga In)sb/gasb Qwscontrasting

confidence: 43%

“…Nevertheless, the growth of Sb-based quantum structures by molecular beam epitaxy (MBE) has not been studied in detail yet. Very little work has been reported on the growth of (Ga, In)Sb/GaSb strained quantum wells which can be considered as a model system for studying strain effects in Sb compounds [8][9][10][11][12][13][14][15].…”

Section: Introductionmentioning

confidence: 99%

Long-wavelength (Ga, In)Sb/GaSb strained quantum well lasers grown by molecular beam epitaxy

Bertru

Баранов

Cuminal

et al. 1998

Semicond. Sci. Technol.

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“…The main reason for this fact is the lack of high-quality samples as illustrated by the dominance of impurity-related emission in the photoluminescence spectra of ͑Ga,In͒Sb/GaSb strained quantum wells ͑QW's͒. 6,7 Here, we present a detailed spectroscopic study of the optical properties of high-quality ͑Ga,In͒Sb/GaSb QW's. We show that the optical response is dominated by free excitons in both absorption and emission.…”

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confidence: 99%

Excitons in strained (Ga,In)Sb/GaSb quantum wells

et al. 1997

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We examine the nature of the lowest-energy optical transition in high-quality ͑Ga,In͒Sb/GaSb quantum wells. Despite the weak electron-hole interaction existing in this system, we observe a distinct exciton resonance in absorption. From the analysis of this resonance, we determine the binding energy and the oscillator strength of the quantum-confined exciton. The coincidence of the photoluminescence peak with the absorption resonance demonstrates that the dominant radiative channel is excitonic. Finally, we show that the thermal quenching of luminescence is related to the thermionic emission of excitons out of the well. ͓S0163-1829͑97͒06707-6͔Semiconductor heterostructures based on narrow-gap materials have been the subject of increasing interest in recent years. 1 These efforts are motivated by the possibility to extend optical studies to the mid-infrared region, and to eventually achieve cw lasing in this spectral range. Most studies have been performed on ͑Ga,In͒As/InP and ͑Ga,In͒͑As,Sb͒/ GaSb heterostructures 2,3 for which high-quality samples have become available. An alternative materials system for this spectral range is ͑Ga,In͒Sb/GaSb ͑Refs. 4 and 5͒ the band gap of which ranges from 0.81 eV ͑GaSb͒ to 0.15 eV ͑InSb͒. Despite its potential, little knowledge has been acquired about the physical properties of this materials system. The main reason for this fact is the lack of high-quality samples as illustrated by the dominance of impurity-related emission in the photoluminescence spectra of ͑Ga,In͒Sb/GaSb strained quantum wells ͑QW's͒. 6,7 Here, we present a detailed spectroscopic study of the optical properties of high-quality ͑Ga,In͒Sb/GaSb QW's. We show that the optical response is dominated by free excitons in both absorption and emission. From the analysis of the absorption spectrum, we determine both the binding energy and the oscillator strength of the quantum-confined heavyhole exciton.We concentrate in our study on a sample consisting of five ͑Ga,In͒Sb QW's separated by GaSb barrier layers. The sample is grown by conventional solid source molecularbeam epitaxy ͑MBE͒ on GaSb͑001͒ substrate. Monomeric Sb, generated by thermal cracking of Sb 4 at 900°C, is used as the Sb source. During growth, the substrate temperature is set to 400°C and the V:III flux ratio is maintained at 1.8. Further details about the substrate preparation and the optimization of growth have been described elsewhere. 8 For the absorption measurements, we use a Fourier transform spectrometer with a resolution of 1.0 cm Ϫ1 . Photoluminescence ͑PL͒ spectra are recorded using a HeNe laser ͑ϭ632.8 nm͒ and a Kr laser ͑ϭ647.1 nm͒ for high excitation density measurements. The luminescence signal is detected with a liquid-nitrogen-cooled InSb detector.Before discussing the optical properties, we present in Fig. 1 the symmetrical ͑004͒ and asymmetrical ͑115͒ x-ray diffraction rocking curves ͑XRC's͒ of the investigated sample. The pronounced splitting of the substrate and buffer layer peaks is due to the unintentional incorporation of 0.5% A...

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“…All mentioned aspects have been mainly investigated for GaAs-based quantum wells ____________________ * Corresponding author: e-mail: kudrawie@if.pwr.wroc.pl [7,[9][10][11][12][13][14]. So far, only few papers [15][16] have been devoted to similar investigations in GaSb-based structures. In our belief, the recombination process is particularly important for In x Ga 1-x Sb/GaSb QW's, because the exciton binding energy is relatively small in such wells.…”

Section: Introductionmentioning

confidence: 97%

Optical properties of an In_0.22Ga_0.78Sb/GaSb single quantum well

Kudrawiec¹,

Bryja

Sęk

et al. 2003

Cryst. Res. Technol.

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Optical properties of an In 0.22 Ga 0.78 Sb/GaSb single quantum well (SQW) have been investigated by photoluminescence (PL) and photoreflectance (PR). Two electron and heavy hole confined states, which had been expected from envelope function calculations, have been detected experimentally. Besides two allowed transitions (1HH-1C and 2HH-2C) also forbidden one (1HH-2C) has been observed in PR. In PL experiment, which had been performed in broad excitation power (EP) range at different temperatures, the state filling effect has been investigated. At 10 K with the increase of EP density to 2 W/cm 2 a linear dependence of integrated PL intensity has been observed. The character of the PL emission is excitonic and does not change with the increase of EP in that excitation range. Above the excitation density of 2 W/cm 2 the in-plane heating of the quantum well carriers occurs. With the increase of temperature the nature of recombination process changes from excitonic to free-carrier recombination type. Above 60 K only the free-carrier recombination take place and for high excitation power an emission from the excited state (2HH-2C) emerges.

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Photoluminescence in strained GaSb/InGaSb quantum wells by metalorganic chemical vapor deposition

Cited by 14 publications

References 29 publications

Long-wavelength (Ga, In)Sb/GaSb strained quantum well lasers grown by molecular beam epitaxy

Long-wavelength (Ga, In)Sb/GaSb strained quantum well lasers grown by molecular beam epitaxy

Excitons in strained (Ga,In)Sb/GaSb quantum wells

Optical properties of an In_0.22Ga_0.78Sb/GaSb single quantum well

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Photoluminescence in strained GaSb/InGaSb quantum wells by metalorganic chemical vapor deposition

Cited by 14 publications

References 29 publications

Long-wavelength (Ga, In)Sb/GaSb strained quantum well lasers grown by molecular beam epitaxy

Long-wavelength (Ga, In)Sb/GaSb strained quantum well lasers grown by molecular beam epitaxy

Excitons in strained (Ga,In)Sb/GaSb quantum wells

Optical properties of an In0.22Ga0.78Sb/GaSb single quantum well

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Optical properties of an In_0.22Ga_0.78Sb/GaSb single quantum well