Photoluminescence investigation of high quality GaAs1−xBix on GaAs

Abstract

Dynamics of above-barrier state excitons in multi-stacked quantum dots J. Appl. Phys. 110, 093515 (2011) Substrate nitridation induced modulations in transport properties of wurtzite GaN/p-Si (100) heterojunctions grown by molecular beam epitaxy J. Appl. Phys. 110, 093718 (2011) Extremely high absolute internal quantum efficiency of photoluminescence in co-doped GaN:Zn,Si Appl. Phys. Lett. 99, 171110 (2011) Two-color InGaN/GaN microfacet multiple-quantum well structures grown on Si substrate J. Appl. Phys. 110, 083518 (2011) Experimental evidence of Ga-vacancy induced room temperature ferromagnetic behavior in GaN films Appl. Phys. Lett. 99, 162512 (2011) Additional information on Appl. Phys. Lett.

Recombination mechanisms and band alignment of GaAs1−xBix/GaAs light emitting diodes

“…It shows that the EL peak of the GaAsBi devices shifts less with increasing temperature than the band gap of GaAs. This behavior is consistent with previous photoluminescence measurements 7 and may be attributed to a valence band anti-crossing effect. 12 Fig .…”

“…6 The spectroscopic data reported to date show promising optical properties in this material. 7,8 Strong photoluminescence (PL) and electroluminescence (EL) from GaAs 1Àx Bi x light emitting diodes (LEDs) have been reported. 9 However little, if any, research has been undertaken to assess the carrier recombination and temperature dependent processes occurring in such devices.…”

“…1), we do not observe the typical strong "S"-shape behaviour down to 80 K due to the localization effect as observed by others. 7,15 Under higher carrier injection, localisation effects may be screened compared with much lower injection photoluminescence studies. The temperature dependence of the fundamental energy gap of GaAs, E g (GaAs) is obtained from the wellknown Varshni equation (given in Fig.…”

Room temperature photoluminescence intensity enhancement in GaAs1‐xBix alloys

“…The cleaning and oxide removal procedures were as described in Ref. [8]. The active region is a 25 nm thick GaAs 1-x Bi x grown at 400 °C at a rate of 160 nm per hour.…”

The effect of Bi composition to the optical quality of GaAs1−xBix

“…The cleaning and oxide removal procedures were as described in Ref. 10. A 80 nm GaAs buffer was grown at 590 C, followed by GaAs 1Àx Bi x layer at a rate of 160 nm per hour and then capped with 50 nm of GaAs.…”