Photoluminescence Measurement of Carbon in Silicon Crystals Irradiated with High Energy Electrons

Abstract

A high energy electron irradiation-photoluminescenee (PL) technique is employed for developing an analytical method for determining the concentration of carbon in silicon crystals. Particular attention is paid to the effect of oxygen concentration on the PL intensity. The intensity of the 0.790 eV PL peak (C-line) due to the complex C~-O~ (I: interstitial) formed by electron irradiation can be used to measure the lowest levels of 10 TM to i0 I~ atom/em 3 of carbon, almost independently of oxygen concentration. The intensity of the 0.969 eV peak (G-line) due to the complex Cs-Si1-Cs (S: substitutional) is highly affected by the oxygen concentration. When the oxygen concentration in the crystal is known, by using this peak, carbon concentrations of 1O ~ to i0 ~7 atom/cm ~ can be determined within an uncertainty of -+30%. By using both PL peak intensities and theoretical curves obtained from the rate equations of the complex formation, it is possible to determine carbon concentrations in the i014 to 1017 atom/cm 3 range.

Origin of room-temperature photoluminescence around C-line in electron-irradiated Si and its applicability for quantification of carbon

“…Photoluminescence (PL) measurement after the introduction of carbon-related radiation damage [8][9][10][11][12][13][14][15][16][17] attracts considerable attention in detecting carbon in the concentration range lower than 5 × 10 15 cm −3 . It is well established that the highenergy-particle irradiation produces the interstitial C and interstitial O complex (C i -O i ) and the C i and substitutional C complex (C i -C s ), and that they are responsible for the PL emissions of the C-line at 0.789 eV and the G-line at 0.969 eV, respectively.…”

“…The carbon concentration varied from 2 × 10 14 to 4 × 10 16 cm −3 , which was determined either by the IR absorption method for the concentration range higher than 1 × 10 15 cm −3 or by secondary ion mass spectrometry (SIMS) for the range higher than 5 × 10 14 cm −3 , or estimated by PL measurement at 4.2 K for the range lower than 2 × 10 15 cm −3 . [12][13][14][15][16][17] We did not perform the IR or SIMS measurements and used the data given by the suppliers. The samples were irradiated with 2 MeV electrons with a fluence varying from 1 × 10 15 to 1 × 10 17 cm −2 at room temperature, where a fluence of 1 × 10 15 cm −2 was our most typical condition.…”

Quantitative analysis of carbon impurity concentration in silicon epitaxial layers by luminescence activation using carbon ion implantation and electron irradiation

“…2(b)). Higher G-line peaks indicate higher carbon concentrations [5,6]. The C-line intensity was weak (Fig.…”

Crystal growth and evaluation of ultra-long carrier lifetime Czochralski silicon

“…[19][20][21] Carbon concentrations lower than 3.0 × 10 15 atoms=cm 3 were determined using PL spectroscopy. 9,[22][23][24] The PL measurements were conducted using a 532-nm laser as an excitation source. Chip samples were extracted from the centers of whole wafers and immersed in liquid helium in a cryostat with quartz windows.…”