Quantitative analysis of carbon impurity concentration in silicon epitaxial layers by luminescence activation using carbon ion implantation and electron irradiation

Nakagawa, Shoichi; Kashima, Katsunori

doi:10.1002/pssc.201400046

Cited by 18 publications

(26 citation statements)

References 5 publications

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“…The only difference between Si-epi and Si-Cz samples is given by the oxygen trapping peak located at the maximum melt depth (~500 nm), which is only observed in the Si-CZ sample. The formation of this trapping peak might be due to the interaction of the in-diffused oxygen atoms with the excess point defects generated at the maximum melt depth [29] as well as with C impurities already present in the substrate (whose concentration is much higher in Si-CZ wafers compared to Si-epi ones [30]). In a final experiment, we investigated a set of three CZ samples ("HF-pretreat", "Native oxide" and "Thermal oxide", cf.…”

Section: Impurities Penetration Mechanismmentioning

confidence: 99%

Investigation of oxygen penetration during UV nanosecond laser annealing of silicon at high energy densities

Monflier

Tabata²,

Rizk³

et al. 2021

Applied Surface Science

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In this work, we present a comprehensive investigation of impurities contamination in silicon during UV Nanosecond Laser Annealing at high energy density. By investigating in detail the impact of the annealing ambient and of the surface preparation prior to UV-NLA (including the variation of the surface oxide thickness), we show that the observed oxygen penetration originates from the surface oxide layer. It is proposed that, at high energy UV-NLA, the prolonged contact of SiO2 with high temperature liquid Si induces a partial degradation of the SiO2/Si interface, leading to bond breaking and subsequent injection of O atoms into the substrate. A degradation involving less than 5 % of the O atoms contained in the 1 st SiO2 ML is sufficient to account for the measured amount of in-diffused O in all of the analysed samples.

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Section: Impurities Penetration Mechanismmentioning

confidence: 99%

Investigation of oxygen penetration during UV nanosecond laser annealing of silicon at high energy densities

Monflier

Tabata²,

Rizk³

et al. 2021

Applied Surface Science

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“…Defects, such as oxygen precipitates and vacancy‐light element complexes, form due to the interaction between these impurities and point defects during device processes, such as ion implantation, so that they would degrade carrier lifetime and increase C–E leakage current and on‐voltage of IGBTs. It has recently been reported that carbon‐related complexes, such as Ci‐Cs (G‐line) and Ci‐Oi (C‐line), decrease lifetime . Therefore, reducing carbon in the crystal has been required.…”

Section: Comment On Development Of Mcz‐si Crystals For Future Siliconmentioning

confidence: 99%

“…It has recently been reported that carbonrelated complexes, such as Ci-Cs (G-line) and Ci-Oi (C-line), decrease lifetime. [57][58][59] Therefore, reducing carbon in the crystal has been required. In addition, because high-voltage IGBTs for infrastructure applications of a power supply require high resistivity and high lifetime materials, FZ-Si crystals with neutron transmutation doping (NTD) are used.…”

Section: Future Researchmentioning

confidence: 99%

Review and Comments for the Development of Point Defect‐Controlled CZ‐Si Crystals and Their Application to Future Power Devices

Hourai

Nagashima

Nishikawa

et al. 2018

Physica Status Solidi (a)

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Development of point defect‐controlled Czochralski silicon (CZ‐Si) crystal growth technology by v/G control, i.e., the ratio of growth rate (v) to the axial temperature gradient (G) in the crystal near its melting point, is reviewed and nitrogen‐ and hydrogen‐doping technologies are proposed for 300‐mm magnetic‐field‐applied CZ‐Si (MCZ‐Si) crystals free of grown‐in defects with very low oxygen for application to future silicon power devices such as insulated gate bipolar transistors (IGBTs). Using a hot zone with a uniform G distribution in a crystal radial direction, v/G is maintained by controlling v of around the critical value at which the amount of vacancies is balanced with that of self‐interstitials so that the generation of grown‐in defects, such as voids and dislocation clusters, are suppressed. Nitrogen‐doping or hydrogen‐doping technology combined with v/G control also enables the enlarging of the process window for grown‐in defect‐free MCZ‐Si crystals that can be used as an alternative material to floating zone‐Si crystals. The advantages and disadvantages of both technologies are discussed from the view point of crystal quality required to guarantee higher performance of future IGBTs.

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“…Interstitial oxygen and substitutional carbon in silicon show the greatest influence on the performance of silicon wafers, whereas other types of oxygen and carbon have no effect. Destructive methods, such as gas fusion analysis 2 , 3 , secondary ion mass spectrometry 4 , 5 , helium activation analysis 6 , and luminescence activation analysis 7 , are used to analyse the content of oxygen and carbon in silicon wafers. The result obtained is the total element content of oxygen and carbon rather than that of their real specific interstitial and substitutional forms bonded in silicon wafers.…”

Section: Introductionmentioning

confidence: 99%

Simulation of infrared spectra of trace impurities in silicon wafers based on the multiple transmission–reflection infrared method

2021

Sci Rep

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The content of trace impurities, such as interstitial oxygen and substitutional carbon, in silicon is crucial in determining the mechanical and physical characteristics of silicon wafers. The traditional infrared (IR) method is adopted as a normal means to analyse their concentration at home and abroad, but there are two problems. The first problem is the poor representativeness of a single local sampling point because the impurity distribution in a solid sample is not as uniform as that in a liquid sample. The second problem is that interference fringes appear in the infrared spectra of the sample due to the thin wafer (≤ 300 μm thick). Based on this, controversial issues existed regarding the measured trace impurity concentrations between wafer manufacturers and solar cell assembly businessmen who used silicon sheets made by the former. Therefore, multiple transmission-reflection (MTR) infrared (IR) spectroscopy was proposed to solve the problems mentioned above. In the MTR setup, because light passes through different parts of the silicon chip several times, multiple sampling points make the final result more representative. Moreover, the optical path is lengthened, and the corresponding absorbance is enhanced. In addition to amplification of weak signals, the MTR-IR method can eliminate interference fringes via the integrating sphere effect of its special configuration. The signal-to-noise ratio of the corresponding spectrum is considerably improved due to the aforementioned dual effects. Thus, the accuracy and sensitivity of the detection method for trace impurities in silicon chips are greatly increased. In this study, silicon wafers were placed in the MTR setup, and then, their relative properties at room temperature were investigated. The corresponding theoretical calculation and simulation of infrared spectra of silicon chips were provided. This affords an optional method for the semiconductor material industry to analyse trace impurities in their chips.

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Quantitative analysis of carbon impurity concentration in silicon epitaxial layers by luminescence activation using carbon ion implantation and electron irradiation

Cited by 18 publications

References 5 publications

Investigation of oxygen penetration during UV nanosecond laser annealing of silicon at high energy densities

Investigation of oxygen penetration during UV nanosecond laser annealing of silicon at high energy densities

Review and Comments for the Development of Point Defect‐Controlled CZ‐Si Crystals and Their Application to Future Power Devices

Simulation of infrared spectra of trace impurities in silicon wafers based on the multiple transmission–reflection infrared method

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