Photoluminescence of focused ion beam implanted Er³⁺:Y₂SiO₅crystals

Abstract

Erbium doped low symmetry Y2SiO5 crystals attract a lot of attention in perspective of quantum information applications. However, only doping of the samples during growth is available up to now, which yields a quite homogeneous doping density. In the present work, we deposit Er 3+ -ions by the focused ion beam technique at Yttrium sites with several fluences in one sample. With a photoluminescence study of these locally doped Er 3+ :Y2SiO5 crystals, we are able to evaluate the efficiency of the implantation process and develop it for the highest efficiency possible. We observe the dependence of the ion activation after the post-implantation annealing on the fluence value.Keywords: rare earth, concentration dependance, annealing, activation Rare-earth (RE) doped materials are in the focus of interest for modern physics due to their specific properties, such as the presence of high coherence transitions inside the 4f shell and long optical and microwave coherence times. The rapid progress with the REs has been expressed in number of dramatic achievements: the demonstration of long living optical holes in europium-doped yttrium silicate Among other REs, the erbium doped crystals are outstanding due to the presence of optical transitions inside the telecom C-band at the wavelength of around 1530-1565 nm. Moreover, the Er 3+ :Y 2 SiO 5 (Er:YSO) crystal possesses the longest measured optical coherence time of about 6 ms among all other solid state systems [5,6]. On the hand of the magnetic properties, erbium ions possess a very large magnetic moment of 7µ B . Electron Spin Resonance (ESR) studies revealed that the T 2 coherence time can reach the huge value of 100 ms [7]. The development of high fidelity and long-life quantum memory will boost the implementation of long distance quantum communication protocols in already existing fiber optical networks [8,9].So far, all of these research deals with the doped-asgrown Er 3+ :Y 2 SiO 5 crystals. However, implementation of Focused Ion Beam (FIB) technique for doping of the YSO crystals looks as a rather handy possibility to perform different types of quantum elements and quantum gates on one chip without mask-and alignment processes. It is especially advantageous in circuit Quantum Electrodynamics (QED) implementations, where one wants to separate the memory elements from the computation elements on the chip. FIB possesses a wide range of flexible parameters, which allow to perform implantation with controlled fluences at different depths at selected positions. Proper adjustment of these implantation parameters, as well as annealing procedure, makes it possible to implant the Erbium ions in the Yttrium sites and recover the distorted site-symmetry. In this letter, we discuss the results of FIB implantation of the Y 2 SiO 5 crystals with the Erbium ions.The implantation was performed into a nominally undoped YSO crystal, supplied by the Scientific Materials Inc. Doped as-grown Er:YSO 0.005 % crystal was taken as reference. All the crystals have the same orientation of opt...

Hybrid quantum circuit with implanted erbium ions

“…The implantation process was simulated with the SRIM software 23 , which yields an ion distribution with a mean depth of 60 nm and 39 nm mean deviation 21 . Since the incident Er 3+ beam severely damages the crystal lattice, thermal annealing is employed for its restoration.…”

Optical and Microwave Properties of Focused Ion Beam Implanted Erbium Ions in Y2SiO5 Crystals

“…Recently, we demonstrated first experiments on luminescence [3] and magnetic coupling [4] of selectively implanted Erbium ions in YSO. In this work, we show the influence of implantation and post-implantation treatment parameters on the resulting optical properties of the implanted ions.…”

Nanoscale nonlinear effects in Erbium-implanted Yttrium Orthosilicate

“…Therefore, a deep understanding of ion-matter interactions and activation rates in a particular substrate is indispensable. The first results on the activation rate of the implanted Erbium ensembles have already been reported in 13 . In this work, we demonstrate a more fundamental analysis of the focused ion beam implanted Erbium ensembles in the Y 2 SiO 5 (YSO) crystals in dependence on the preparation process.…”

“…Kramers RE ions possess large magnetic moments, which can be used for the manipulation of their spin states with microwaves. The realization of such spin ensembles by focused ion beam (FIB) implantation technique has many advantages, such as freedom in positioning of different ensembles in one crystal, variability of their concentrations and design of their arrangement in a single mask-less process 13 .…”