Photoluminescence of GaSe: Mn Single Crystals

Abstract

The luminescent properties of undoped and doped GaSe single crystals in the region of the fundamental absorption edge have been studied by a number of authors /1 to l o / . The impurity photoluminescence (PL) in GaSe is not completely understood as compared to the near-gap luminescence /11 to 13/. Investigations of P L spectra of GaSe:Mn single crystals at 4.2 K a r e dealt with by the authors of /12/ and /13/. However, the authors of these reports have not studied excitation spectra, P L kinetics, dependences of the shapes and

Photoluminescence of layered semiconductor GaS doped with Mn

“…However, the type of the conduction of the Mn-doped samples is p-type from Hall effect measurement. Tagiev et al have shown that in layered GaSe crystals the Mn ions occupy the Ga site and are in the bivalent state Mn 2+ [17]. We consider that the acceptor level in Mn-doped GaS is connected to Mn atoms at Ga site.…”

Tin-related double acceptors in gallium selenide single crystals

“…In this issue, detailed information on doping processes plays an important role. The problem of doping, that was investigated early without drawing definitive conclusions, [8][9][10][11][12][13] has been recently approached by other groups that have specially studied the influence of impurities from groups I and II as acceptors in GaSe. [14][15][16][17][18][19][20][21] Room temperature hole concentrations of the order of 10 15 -10 16 cm Ϫ3 have been reported by doping with Cd, 17 Zn, 18 Cu, 19 and Ag.…”

Transport properties of nitrogen doped p-gallium selenide single crystals

“…[1][2][3][4][5][6][7][8] The possibility of preparing GaSe high-quality thin films through the so-called van der Waals epitaxy [9][10][11][12] has lead to a renewed interest because of the potential optoelectronic applications. The problem of doping, that was early investigated without drawing definitive conclusions, [13][14][15][16][17][18] has been recently attacked by other groups that have specially studied the role of group II impurities as acceptors in GaSe. [19][20][21][22][23] Attempts to get low resistivity n-type GaSe have been up to now unsuccessful.…”