Transport properties of nitrogen doped <i>p</i>-gallium selenide single crystals

Sánchez‐Royo, J. F.; Segura, A.; Chévy, A.; Roa, L.

doi:10.1063/1.360932

Cited by 15 publications

(23 citation statements)

References 45 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…We also carried out temperature dependent resistivity measurement for unimplanted and annealed sample at 500 °C and no appreciable change in resistivity was observed for the sample A0. As seen from Table 1, doping with nitrogen by ion implantation reduced the resistivity of GaSe single crystal five orders of magnitudes; this result suggests the effect of N-induced modification and doping of GaSe single crystal and the resistivity values obtained in this study are consistent with what was observed by chemical doping technique [8].…”

Section: Resultssupporting

confidence: 93%

“…Using Bridgman systems, GaSe single crystals doped with different elements from different group by adding the impurities to the growth ampoule are produced and studied by various researchers [5,6,7,8]. It is quite hard to control the amount of impurity in the method of adding the impurities to the ampoules due to segregation and solubility problems.…”

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Electrical properties of nitrogen implanted GaSe single crystal

Karabulut

Parlak

Turan

et al. 2003

Cryst. Res. Technol.

View full text Add to dashboard Cite

N-implantation to GaSe single crystals was carried out perpendicular to c-axis with ion beam of 6x10 15 ions/cm 2 dose having energy values 30 keV and 60 keV. Temperature dependent electrical conductivities and Hall mobilities of implanted samples were measured along the layer in the temperature range of 100-320 K. It was observed that N-implantation decreases the resistivity values down to 10 3 Ω-cm depending on the annealing temperature, from the room temperature resistivity values of as-grown samples lying in the range10 6 -107 Ω-cm. The temperature dependent conductivities exhibits two regions (100-190 and 200-320 K) with the activation energies of 234-267 meV and 26-74 meV, for the annealing temperatures of 500 and 700 °C, respectively. The temperature dependence of Hall mobility for the sample annealed at 500 °C shows abrupt increase and decrease as the ambient temperature increases. The analysis of the mobility-temperature dependence in the studied temperature range showed that impurity scattering and lattice scattering mechanisms are effective at different temperature regions with high temperature exponent. Annealing of the samples at 700 °C shifted impurity scattering mechanism toward higher temperature regions. In order to obtain the information about the defect produced by N-implantation, the carrier density was analyzed by using single donor-single acceptor model. We found acceptor ionization energy as E a =450 meV, and acceptor and donor concentration as 1.3x10 13 and N d =3.5x10 10 cm -3 , respectively.

show abstract

Section: Resultssupporting

confidence: 93%

Section: Introductionmentioning

confidence: 99%

Electrical properties of nitrogen implanted GaSe single crystal

Karabulut

Parlak

Turan

et al. 2003

Cryst. Res. Technol.

View full text Add to dashboard Cite

show abstract

“…Although the structural, electrical, optical absorption and photoelectric properties have been widely investigated [6][7][8][9][10], only a few reports have been published on the metal/p-GaSe SBDs [11][12][13][14][15][16]. In contrast to other layered semiconductors [17][18][19][20][21], to my knowledge, measurements and modelling of the characteristic parameters for silver SBDs fabricated on p-GaSe have not yet 0925-8388/$ -see front matter © 2010 Elsevier B.V. All rights reserved.…”

Section: Introductionmentioning

confidence: 99%

Measurement and modelling of the characteristic parameters for silver Schottky contacts on layered p-GaSe compound in a wide temperature range

Abay

2010

Journal of Alloys and Compounds

View full text Add to dashboard Cite

“…Most of the investigations about the optical and electrical properties have been made on chemically doped crystals [4][5][6][7]. It is difficult to control the amount of impurity in the method of adding the impurities to the ampoules due to segregation and solubility problems.…”

Section: Introductionmentioning

confidence: 99%

Annealing effect on electrical and photoconductive properties of Si implanted GaSe single crystal

Karabulut¹,

Parlak

Yılmaz

et al. 2003

Cryst. Res. Technol.

View full text Add to dashboard Cite

GaSe single crystals grown by Bridgman method have been doped by ion implantation technique. The samples were bombarded in the direction parallel to c-axis by Si ion beam of about 100 keV to doses of 1x10 16 ions/cm 2 at room temperature. The effects of Si implantation with annealing at 500 and 600 o C on the electrical properties have been studied by measuring the temperature dependent conductivity and photoconductivity under different illumination intensities in the temperature range of 100-320 K. It is observed that Si implantation increases the room temperature conductivity 10 -7 to 10 -3 (Ω-cm) -1 depending on the post annealing temperature. The analysis of temperature dependent conductivity shows that at high temperature region above 200 K, the transport mechanism is dominated by thermal excitation in the doped and undoped GaSe samples. At lower temperatures, the conduction of carriers is dominated by variable range hopping mechanism in the implanted samples. Annealing of the samples at and above 600 o C weakens the temperature dependence of the conductivity and photoconductivity. This indicates that annealing of the implanted samples activates Si-atoms and increases structural deformations and stacking faults. The same behavior was observed from photoconductivity measurements. Hence, photocurrent-illumination intensity dependence in the implanted samples obeys the power low I pc ∝ Φ n with n between 1 and 2 which is an indication of continuous distribution of localized states in the band gap.

show abstract

Transport properties of nitrogen doped p-gallium selenide single crystals

Cited by 15 publications

References 45 publications

Electrical properties of nitrogen implanted GaSe single crystal

Electrical properties of nitrogen implanted GaSe single crystal

Measurement and modelling of the characteristic parameters for silver Schottky contacts on layered p-GaSe compound in a wide temperature range

Annealing effect on electrical and photoconductive properties of Si implanted GaSe single crystal

Contact Info

Product

Resources

About