2008
DOI: 10.1134/s1063782608090169
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Photoluminescence of GeSi/Si nanoclusters formed by sublimation molecular-beam epitaxy in GeH4 medium

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Cited by 9 publications
(8 citation statements)
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“…It should be noted that in the structures grown by MBE the formation of the super dome islands has been observed in the process of the post-growth annealing (Kamins et al, 1999). In contrary, in SMBE in GeH 4 ambient the formation of the super dome islands has been observed just during growth (Filatov et al, 2008a(Filatov et al, , 2008b, that was attributed to Ostwald ripening.…”
Section: Growth and Characterizationmentioning
confidence: 79%
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“…It should be noted that in the structures grown by MBE the formation of the super dome islands has been observed in the process of the post-growth annealing (Kamins et al, 1999). In contrary, in SMBE in GeH 4 ambient the formation of the super dome islands has been observed just during growth (Filatov et al, 2008a(Filatov et al, , 2008b, that was attributed to Ostwald ripening.…”
Section: Growth and Characterizationmentioning
confidence: 79%
“…The GeSi/Si(001) structures grown on the p-Si substrates with the nanoislands grown in the same conditions as the surface ones destined to the Tunnelling AFM studies but capped with the 40 nm thick cladding Si layers had been used for the optical investigations. It has been found that the nanoislands grown within T g = 600 ÷ 800C consisted of Ge x Si 1-x alloy with the Ge molar fraction x decreasing from 0.55 downto  0.25 with T g increasing from 600C up to 800C (Filatov et al, 2008b, Mashin et al, 2010.…”
Section: Growth and Characterizationmentioning
confidence: 99%
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