Photoluminescence of i-Ga x In1 − x As/n-GaAs heterostructures containing a random InAs quantum dot array

Lunin, L. S.; Sysoev, I. A.; Alfimova, D. L.; Chebotarev, S. N.; Pashchenko, A. S.

doi:10.1134/s0020168511080103

Cited by 13 publications

(8 citation statements)

References 3 publications

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“…The intensive development of nanoelectronics has increased the interest in obtaining new classes of materials. The generally recognized and well-studied technological methods for the preparation of such nanostructures are molecular-beam and gas-phase epitaxy [6,7]. In addition to these methods, classical growth methods actively adapt to the growth of nanomaterials: liquid-phase epitaxy [8], zone sublimation recrystallization [9][10][11], sputtering with laser [12], electron [13], and ion beams [14].…”

Section: Introductionmentioning

confidence: 99%

Low-Energy Ion Technique for Semiconductor Surface Preparation

Chebotarev

Irkha

Mohamed

2018

SSP

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We proposed an experimental technique for determining the sputtering yields of two-component semiconductors – gallium arsenide and indium arsenide by low-energy argon ions. It was suggested to measure the volume of a crater formed by inert ions bombarding on the target surface using the method of scanning laser confocal microscopy. It was demonstrated that in the energy range from 100 to 300 eV, the energy dependence of sputtering yields for these materials is practically linear. It is established that the sputtering yields for normal bombardment by argon ions at optimum energy of 150 eV are equal to Y(GaAs) = 0.41 and Y(InAs) = 0.73. It is found that an increase in the etching time of the surface of gallium arsenide and indium arsenide leads to a characteristic transformation of the surface relief. The studies of the sputtering of two-component targets indicate the initial strong non-stechiometry. Etching for a certain period of time leads to an equalization of the concentrations of the sputtered components. It was found that to obtain a uniform composition of the mass flow it is necessary to pre-sputter the targets with shielded substrates.

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Section: Introductionmentioning

confidence: 99%

Low-Energy Ion Technique for Semiconductor Surface Preparation

Chebotarev

Irkha

Mohamed

2018

SSP

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“…The detectability of such structures is of the order of D* = 3•10 8 cm•Hz 1/2 at room temperature. These structures, with interband absorption, give a peak of photoactivity in the range 1.1 -1.5 μm [14] (which corresponds to the near-infrared range) and allow to achieve multispectrality on longer wavelength ranges due to changes in the growth processes of different layers of quantum dots in the matrix of the same device. In [10], a detailed description of the possibility of creating a multispectral state of the QD-InAs / GaAs heterostructure, with peaks 2.96•10 10 (λ -9 μm), 8.7•10 10 (λ -7.4 μm), 8.5•10 12 (λ -6.5 μm) и 2.2•10 10 (λ -7.4 μm) cm•Hz 1/2 at operating temperatures 77, 70, 40 and 5 K respectively.…”

Section: Introductionmentioning

confidence: 99%

Functional Characteristics of QD-InAs/GaAs Heterostructures with Potential Barriers AlGaAs and GaAs

Blokhin

Arustamyan

Goncharova

2018

SSP

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In this paper we present the results of investigation of heterostructures with an array of InAs quantum dots grown on GaAs substrates with GaAs and AlGaAs front barriers for high-speed near-IR photodetectors. The thickness of the barrier layers did not exceed 30 nm. It is shown that the ion-beam deposition method makes it possible to grow quantum dots with lateral dimensions up to 30 nm and 15 nm height. The spectral dependences of the external quantum efficiency and dark current-voltage characteristics are investigated.

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“…Метод ИЛК используется для выращивания тонких пле-нок соединений групп III-V [26; 27] и II-VI [28; 29] периодической таблицы химических элементов. Ранее мы сообщали о выращивании методом IBD слоев Si [30; 31], а также гетероструктур в системах InAs/GaAs [32][33][34][35] и Ge/Si [36; 37]. цель данной работы заключается в исследова-нии влияния потенциальных энергетических барь-еров AlGaAs на функциональные характеристики гетероструктур InAs/GaAs.…”

Section: Introductionunclassified

THE STUDY OF InAs/GaAs HETEROSTRUCTURES WITH POTENTIAL BARRIERS AlGaAs

Blokhin¹,

Pashchenko²,

Lunin³

et al. 2017

Sc. South Russ.

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Аннотация. Проведены исследования фотолюминесценции и темновых вольт-амперных характе-ристик гетероструктур InAs/GaAs с тремя типами потенциальных барьеров для квантовых точек: GaAs, Al 0,2 Ga 0,8 As, Al 0,4 Ga 0,6 As. Гетероструктуры выращены методом ионно-лучевой кристаллизации. Наличие пиков излучения фотолюминесценции, обусловленных смачивающим слоем для трех типов потенци-альных барьеров, свидетельствует о росте квантовых точек InAs в режиме Странского -Крастанова. Введение в конструкцию широкозонных барьеров AlGaAs приводит к смещению пика излучения фо-толюминесценции основных состояний GS в квантовых точках InAs в высокоэнергетическую область (синее смещение) и увеличивает интенсивность пика. В случае использования барьеров Al x Ga 1-x As ха-рактерным признаком является уменьшение ширины пика излучения на половине максимума излуче-ния в сравнении с потенциальными барьерами GaAs. Изменение состава тройного твердого раствора Al x Ga 1-x As с x = 0,2 до x = 0,4 ат. %, покрывающего сверху квантовые точки InAs, приводит к повыше-нию интенсивности пика излучения основных состояний квантовых точек. Результаты исследования темновых вольт-амперных характеристик экспериментальных образцов показывают, что доминирую-щими механизмами переноса носителей заряда являются термоэлектронная эмиссия и туннелирова-ние, стимулированное внешним электрическим полем. Использование широкозонных потенциальных барьеров AlGaAs вместо GaAs способствует уменьшению напряжения смещения (до 0,48 В), при ко-тором происходит изменение механизма переноса носителей заряда с термоэмиссионного на туннели-рование, стимулированное внешним электрическим полем. Введение потенциального барьера состава Al 0,4 Ga 0,6 As позволяет добиться минимального темнового тока 10 -9 А в гетероструктурах InAs/GaAs с квантовыми точками.Ключевые слова: гетероструктуры InAs/GaAs, ИК-диапазон, барьер AlGaAs, оптоэлектроника, тройные твердые растворы на основе AIIIBV. abstract. Research has been conducted on the photoluminescence and the dark current-voltage characteristics of InAs/GaAs heterostructures with three types of potential barriers to the quantum dots: GaAs, Al 0,2 Ga 0,8 As, Al 0,4 Ga 0,6 As. Heterostructures were grown with an ion-beam crystallization method. The presence of the photoluminescence emission peaks specified by the wetting layer for the three types of potential barriers shows the Stransky Krastanow growth mode of InAs quantum dots. The introduction of wide-AlGaAs barriers into the design leads to the shift of the photoluminescence emission peak of the ground states (GS) in the InAs quantum dots into the high-energy region (blue shift) and increases the peak intensity. In case of Al x Ga 1-x As barrier usage the characteristic feature is the reduction of the emission peak width at half maximum of the emission, in comparison with the potential barriers of GaAs. It is shown that the change in the composition of the ternary solid solution Al x Ga 1-x As from x = 0.2 to x = 0.4 at. % which coats the InAs quantum dots from 1 Южный научный центр Росс...

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Photoluminescence of i-Ga x In1 − x As/n-GaAs heterostructures containing a random InAs quantum dot array

Cited by 13 publications

References 3 publications

Low-Energy Ion Technique for Semiconductor Surface Preparation

Low-Energy Ion Technique for Semiconductor Surface Preparation

Functional Characteristics of QD-InAs/GaAs Heterostructures with Potential Barriers AlGaAs and GaAs

THE STUDY OF InAs/GaAs HETEROSTRUCTURES WITH POTENTIAL BARRIERS AlGaAs

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