Photoluminescence of InAs1−xSbx/AlSb single quantum wells: Transition from type-II to type-I band alignment

Abstract

Public reporting burden for the collection of information is estimated to average 1 hour per response, including the time for reviewing instructions, searching existing data sources, gathering and maintaining the data needed, and completing and reviewing the collection of information. Send comments regarding this burden estimate or any other aspect of this collection of information, including suggestions for reducing this burden, to Washington Headquarters Services, Directorate for Information Operations and Reports, 1215 Jefferson Davis Highway, Suite 1204, Arlington VA 22202-4302. Respondents should be aware that notwithstanding any other provision of law, no person shall be subject to a penalty for failing to comply with a collection of information if it does not display a currently valid OMB control number.

Two-band superlinear electroluminescence in GaSb based nanoheterostructures with AlSb/InAs1−x Sbx/AlSb deep quantum well

“…That is why the transition to the type II junction should occur for Sb content in the solid solution less than 12%, in contrast to the value of 15% predicted in the paper. 11 It should be noted that the EL intensity of sample A was 2-3 times higher than one of the sample B, which indicates better structural parameters probably due to the lower strain in the structure.…”

“…Sample A exhibits better structural parameters. According to the paper, 11 the transition from type II to type I for AlSb/InAsSb is at 15% Sb content in the solid state phase. Fig.…”

Channel Characteristics of InAs/AlSb Heterojunction Epitaxy: Comparative Study on Epitaxies with Different Thickness of InAs Channel and AlSb Upper Barrier

“…A heavy doping was applied on the ohmic contact region of InAs cap layer in order to reduce the contact resistant [18]. A Schottky contact forms between the gate metal electrode and the InAlAs protection layer [19], to prevent the electrons continually spreading to the metal. Controlling the gate bias voltage can change the Schottky barrier, thus controlling the 2DEG density in channel.…”

Self‐consistent analysis of InAsSb quantum‐well heterostructures

“…In this paper, we propose a material design of AlSb/InAsSb heterostructures with an InAs 1– x Sb x alloy composition corresponding to x = 0.2 that is latticed matched to AlSb and x = 0.6 which has the narrowest bandgap and smallest effective mass . Owing to the small effective mass and narrow bandgap, InAsSb alloy is expected to have a higher electron mobility, along with its higher 2DEG concentration for intersubband scattering and type‐I band alignment with AlSb to confine both electrons and holes, making it superior for HEMT applications than AlSb/InAs heterostructures . To test the potential advantage that AlSb/InAsSb heterostructures could achieve, we employ the improved theoretical model of self‐consistent calculation of Schrödinger–Poisson equations by taking into account the strain effect and the nonparabolicity effect.…”