Photoluminescence of Si-doped GaAs epitaxial layers

Yaremenko, N. G.; Карачевцева, М. В.; Страхов, В. А.; Галиев, Г. Б.; Mokerov, V. G.

doi:10.1134/s1063782608130058

Cited by 3 publications

(2 citation statements)

References 11 publications

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“…Another way to characterize the sample quality is to calculate the activation energies of the defects via the evolution of the PL intensity with temperature, using the Arrhenius expression of log (I 0 /I−1) versus 1/T, where I 0 is the PL intensity at 0 K [21].…”

Section: Resultsmentioning

confidence: 99%

Reduction of defect density by rapid thermal annealing in GaAsBi studied by time-resolved photoluminescence

Mazzucato¹,

Boonpeng²,

Carrère³

et al. 2013

Semicond. Sci. Technol.

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Time-resolved photoluminescence was performed on as-grown and annealed bulk GaAsBi samples. Rapid thermal annealing was carried out at a temperature of 750 • C. With annealing, we observed a significant change in the photoluminescence decay time at low temperature and low excitation power, which is likely due to a reduction of localized states. Although the time-integrated photoluminescence intensity did not show a large variation, this enhancement was confirmed by the observed removal after annealing of the S-shape behaviour present in the as-grown sample.

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Section: Resultsmentioning

confidence: 99%

Reduction of defect density by rapid thermal annealing in GaAsBi studied by time-resolved photoluminescence

Mazzucato¹,

Boonpeng²,

Carrère³

et al. 2013

Semicond. Sci. Technol.

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“…According to this, band B can be associated with an As Ga acceptor (either Si As or C As ) complex, 14 although the V Ga -Ga As complex has also been claimed to be responsible for such emission. 15 Band C could be associated with As Ga -Si Ga donor-donor pairs. 16 In spectrum type (b), the band A¢ corresponds to band-to-band (B2B) recombination, which peaks above the bandgap energy because of the band filling effect; this means that, around the dislocation core, the free electron concentration is enhanced, which can be associated with an increase of [Si Ga ] shallow donors and/or a decrease of compensating acceptors around the dislocation core.…”

Section: Resultsmentioning

confidence: 99%

A Spectrum Image Cathodoluminescence Study of Dislocations in Si-Doped Liquid-Encapsulated Czochralski GaAs Crystals

González

Martínez

Jiménez

et al. 2010

Journal of Elec Materi

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Dislocations in Si-doped liquid-encapsulated Czochralski GaAs crystals have been studied by spectrum imaging cathodoluminescence. The interaction between the dislocations and the crystal matrix results in complex atmospheres, which can extend several tens of micrometers around the dislocations. The formation of these atmospheres depends on the melt stoichiometry and the doping level. Different atmospheres formed during growth and postgrowth cooling were studied. Their main characteristics and possible scenarios of formation are suggested, taking account of the characteristics of the samples in terms of [As]/[Ga] ratio and doping. Excess As defects seem to play a major role in the formation of the atmospheres.

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GaAs (1 1 1) epilayers grown by MBE on Ge (1 1 1): Twin reduction and polarity

Pelati

Patriarche

Mauguin

et al. 2019

Journal of Crystal Growth

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We perform the growth of GaAs (111) epilayers on nominal Ge(111) wafers by molecular beam epitaxy (MBE). The polarity of GaAs is (111)A and homongeneous over the full area, as measured by transmission electron microscopy and high energy electron diffraction. This orientation conflicts with the common growth model for GaAs on Ge(111). Twinned domains are the main defects in our GaAs (111) epilayers. Using cathodoluminescence, we observe that some twin boundaries hold large number of non-radiative recombination centers. During growth, we find that only a narrow domain of As:Ga ratios lead to the growth of smooth and twin-free GaAs (111)A epilayers. At low As:Ga ratio, the surface is rough; while at high As:Ga ratio the epilayers present large densities of twinned domains.

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Photoluminescence of Si-doped GaAs epitaxial layers

Cited by 3 publications

References 11 publications

Reduction of defect density by rapid thermal annealing in GaAsBi studied by time-resolved photoluminescence

Reduction of defect density by rapid thermal annealing in GaAsBi studied by time-resolved photoluminescence

A Spectrum Image Cathodoluminescence Study of Dislocations in Si-Doped Liquid-Encapsulated Czochralski GaAs Crystals

GaAs (1 1 1) epilayers grown by MBE on Ge (1 1 1): Twin reduction and polarity

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