GaAs (1 1 1) epilayers grown by MBE on Ge (1 1 1): Twin reduction and polarity

Pelati, D.; Patriarche, G.; Mauguin, O.; Largeau, L.; Travers, Laurent; Brisset, François; Oehler, Fabrice

doi:10.1016/j.jcrysgro.2019.05.006

Cited by 17 publications

(9 citation statements)

References 37 publications

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“…The LT-PL measurement shown in Figure d indicates that the high As 2 flux degrades the optical properties. At a high As 2 pressure, defects like twinning and point defects can act as a nonradiative recombination center, which degrades the optical property of the materials . However, relating the optical properties of the material with twin defects is not a trivial job.…”

Section: Resultsmentioning

confidence: 99%

“…23,26,27 However, in the mismatched epitaxy of GaAs (111)A on Ge (111), the need for an optimum As 2 flux was observed for minimum twinning. 28 Here, the lowest As 2 flux results in minimum twinning.…”

Section: Effect Of Asmentioning

confidence: 91%

“…At a high As 2 pressure, defects like twinning and point defects can act as a nonradiative recombination center, which degrades the optical property of the materials. 28 However, relating the optical properties of the material with twin defects is not a trivial job. Twin % calculated from the XRD data only tells us about the volume of twinned material but not the density of twin boundaries, which is responsible for degradation in optical properties.…”

Section: Effect Of Asmentioning

confidence: 99%

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Improving the Material Quality of GaAs Grown on the c-Plane Sapphire by Molecular Beam Epitaxy to Achieve Room-Temperature Photoluminescence

Kumar,

Saha,

Kuchuk

et al. 2023

Crystal Growth & Design

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High-quality GaAs on the c-plane sapphire has been achieved by employing a two-step growth technique, multiple annealing, and an AlAs nucleation layer using molecular beam epitaxy (MBE). The effect of growth parameters, namely, growth temperature, As2 flux, and low-temperature layer growth temperature (LTLGT) in two-step growth have been investigated. In all of the grown samples, the epitaxial orientation of the film is GaAs (111)A. Unlike the homoepitaxial GaAs (111)A MBE growth, where increasing the As2 flux improves the film quality, here the lowest As2 flux resulted in the best film quality. Very low LTLGT resulted in highly twinned material and film surface with many pits. Growth temperature also plays an important role, as seen by the exceptional structural and optical properties of samples grown at 650 °C, but at the cost of the rough film surface. We have observed low-temperature photoluminescence (PL) for all of the samples. However, for the first time, to the best of our knowledge, room-temperature PL (RT-PL) has been demonstrated from a heteroepitaxial GaAs (111)A film. This result is important because RT-PL from the epitaxial GaAs/c-plane sapphire will lead to the fabrication of GaAs laser on sapphire, which is an important functionality to realize photonic circuits on the sapphire platform.

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Section: Resultsmentioning

confidence: 99%

Section: Effect Of Asmentioning

confidence: 91%

Section: Effect Of Asmentioning

confidence: 99%

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Improving the Material Quality of GaAs Grown on the c-Plane Sapphire by Molecular Beam Epitaxy to Achieve Room-Temperature Photoluminescence

Kumar,

Saha,

Kuchuk

et al. 2023

Crystal Growth & Design

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“…The issue of the polarity of the nucleating GaP layer is not obvious; however, it can be suggested that nucleating GaP islands are (111)A polar, which agrees with the low number of [111] rotational twins, as it is commonly observed for nanowires grown along the group III polar [111]A direction. − Indeed, we observe a higher density of rotational twinning on the inclined {111̅} planes, which agrees with an assumption that they are group V terminated (B-polar {111} planes). In addition, half-order streaks in the RHEED pattern were observed after high-temperature annealing of the two-step grown sample (procedure #A), indicating the presence of (2 × 2) surface reconstruction, which is typical only for a (111)A-type surface .…”

Section: Resultsmentioning

confidence: 99%

Nanoscale Gallium Phosphide Epilayers on Sapphire for Low-Loss Visible Nanophotonics

Fedorov

Koval²,

Ryabov

et al. 2022

ACS Appl. Nano Mater.

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Gallium phosphide is a low-loss, high-refractive-index semiconductor considered as a promising material for active and passive components in modern nanophotonics. In this work, we show that nanoscale epitaxial layers of GaP with high optical quality can be formed directly on the transparent sapphire wafers despite the symmetry and lattice constant mismatch. This is achieved using a two-step growth technique through the framework of a domain matching epitaxy mechanism. Direct molecular beam epitaxial growth enables the control of material properties and layer thickness with subnanometer precision and allows us to obtain (111)-oriented epitaxial layers of GaP on high-optical-contrast sapphire wafers without the use of postgrowth layer transfer techniques. The influence of growth conditions on the structural quality of GaP-on-sapphire is revealed using Raman spectroscopy and X-ray diffraction reciprocal space mapping. We study the impact of the growth procedure employing a low-temperature seeding layer on the GaP layer morphology and structural quality. Spectroscopic ellipsometry measurements confirm that both the refractive index and the absorption coefficient of the epitaxial GaP layers are close to those of bulk GaP crystals. We also discuss how the GaP layer morphology and structural quality affect its optical density, drawing special attention to the mechanisms of optical losses. Finally, by nanostructuring the grown layer, we fabricate single GaP nanoantennas and confirm their highly resonant optical response in the visible spectral range, thus confirming the feasibility of the reported technology for various nanophotonic applications.

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“…Twin % calculated from phi-scan only tells us about the volume of twinned material not the density of twin boundary which is responsible for RC broadening. 23…”

Section: (C) Effect Of Alas Nucleation Layer Thicknessmentioning

confidence: 99%

Single crystalline Ge thin film growth on c-plane sapphire substrates by molecular beam epitaxy (MBE)

et al. 2022

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GaAs (1 1 1) epilayers grown by MBE on Ge (1 1 1): Twin reduction and polarity

Cited by 17 publications

References 37 publications

Improving the Material Quality of GaAs Grown on the c-Plane Sapphire by Molecular Beam Epitaxy to Achieve Room-Temperature Photoluminescence

Improving the Material Quality of GaAs Grown on the c-Plane Sapphire by Molecular Beam Epitaxy to Achieve Room-Temperature Photoluminescence

Nanoscale Gallium Phosphide Epilayers on Sapphire for Low-Loss Visible Nanophotonics

Single crystalline Ge thin film growth on c-plane sapphire substrates by molecular beam epitaxy (MBE)

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