Photoluminescence of single<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:mi>GaN</mml:mi><mml:mo>∕</mml:mo><mml:mi>AlN</mml:mi></mml:mrow></mml:math>hexagonal quantum dots on<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:mi>Si</mml:mi><mml:mo>(</mml:mo><mml:mn>111</mml:mn><mml:mo>)</mml:mo></mml:mrow></mml:math>: Spectral diffusion effects

Bardoux, Richard; Guillet, Thierry; Lefèbvre, Pierre; Taliercio, Thierry; Bretagnon, Thierry; Rousset, Sébastien; Gil, Bernard; Sèmond, F.

doi:10.1103/physrevb.74.195319

Cited by 62 publications

(42 citation statements)

References 26 publications

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“…The wurtzite symmetry generally induces internal electric fields of several MV/cm along the (0001) growth axis. This results in giant quantum-confined Stark effect that, when the QD height is increased over ~2-3 nm, red-shifts exciton energies over hundreds of meV [11,12], yields non-conventional recombination dynamics [13], increasing radiative lifetimes over several orders of magnitude [14] and induces strong electron-hole dipoles that are especially sensitive to their electrostatic environment [15].…”

Section: Introductionmentioning

confidence: 99%

“…In spite of these challenging experimental conditions, single-dot spectroscopy has been performed on wurtzite GaN/AlN QDs either grown along the (0001) direction [15][16][17][18][19] or along the non-polar (11)(12)(13)(14)(15)(16)(17)(18)(19)(20) direction [20,21], which reduces electric field effects. Biexcitonic recombination was identified and studied [16,19,22], as well as spectral diffusion effects [15], Stark shift [23,24], and controlled single photon emission has proven to be at hand [17].…”

Section: Introductionmentioning

confidence: 99%

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Polarized emission from GaN/AlN quantum dots: Single-dot spectroscopy and symmetry-based theory

et al. 2008

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We report micro-photoluminescence studies of single GaN/AlN quantum dots grown along the (0001) crystal axis by molecular beam epitaxy on Si(111) substrates. The emission lines exhibit a linear polarization along the growth plane, but with varying magnitudes of the polarization degree and with principal polarization axes that do not necessarily correspond to crystallographic directions. Moreover, we could not observe any splitting of polarized emission lines, at least within the spectral resolution of our setup (1 meV). We propose a model based on the joint effects of electron-hole exchange interaction and in-plane anisotropy of strain and/or quantum dot shape, in order to explain the quantitative differences between our observations and those previously reported on, e.g. CdTe-or InAs-based quantum dots.

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Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Polarized emission from GaN/AlN quantum dots: Single-dot spectroscopy and symmetry-based theory

et al. 2008

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“…polarisation anisotropy and/or spectral diffusion. However, spectral diffusion usually appears as the dominant mechanism, particularly in polar and non polar GaN QDs [2][3][4]. It is assumed to originate from the interplay of carriers in the dots with loosely trapped charges around the QDs.…”

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confidence: 99%

Homogeneous and inhomogeneous linewidth broadening of single polar GaN/AlN quantum dots

Demangeot

Simeonov

Butté

et al. 2009

Phys. Status Solidi (c)

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We report on the dependence on temperature of the homogeneous and inhomogeneous broadening of the fundamental transition of single polar GaN/AlN quantum dots (QDs). Stranski‐Krastanov QDs have been grown by molecular beam epitaxy using NH3 as a nitrogen source, with a very low surface density. Low temperature (LT) microphotoluminescence measurements have been performed on 200 nm wide mesas in order to isolate the luminescence of single QDs. The linewidth is found to vary from 590 μeV at 4 K up to 1350 μeV at 65 K in a dot of 6 monolayer height. Though the LT linewidth is still dominated by spectral diffusion, the temperature dependent broadening up to 50 K is mainly accounted for by interactions between excitons and acoustic phonons through a coupling coefficient value nearly two orders of magnitude larger than its counterpart in InAs QDs. (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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“…Indeed, because of low temperature PL quenching can be only due to tunneling of carriers from the QDs to defects in the matrix. It is apparently that carriers captured by the traps change the electric field in vicinity of the QDs that causes shift of QDs and defects energy levels [12]. The matrix will be charged until the energy levels of QDs and recombination centers match that results in an increases of the leakage rate and rate of recombination in the matrix.…”

Section: Discussionmentioning

confidence: 99%

Linear polarized photoluminescence from GaN quantum dots imbedded in AlN matrix

Журавлев

Aleksandrov

Holtz

2010

Phys. Status Solidi (c)

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We report microphotoluminescence studies of GaN/AlN quantum dots grown along the (0001) crystal axis by molecular‐beam epitaxy on sapphire substrates. To obtain quantum dots with different density and size a nominal GaN coverage was varied from 1 to 4 monolayers. The highest density of quantum dots was about 1011 cm‐2, so about 103 quantum dots was excited in experiments. We found that the photoluminescence intensity of a sample with the smallest amount of deposited GaN decreases in more than two orders of magnitude under continuous‐wave laser exposure during about 30 minutes and then it remains stable. The photoluminescence intensity of the rest samples was time‐independent quantity. The emission band of the former sample exhibits a prominent linear polarization along the growth plane. We assume that the quite high degree of polarization can be due anisotropy of strain and/or shape of the quantum dots formed near dislocations which act also as recombination centers causing photoluminescence quenching. (© 2010 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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Photoluminescence of singleGaN∕AlNhexagonal quantum dots onSi(111): Spectral diffusion effects

Cited by 62 publications

References 26 publications

Polarized emission from GaN/AlN quantum dots: Single-dot spectroscopy and symmetry-based theory

Polarized emission from GaN/AlN quantum dots: Single-dot spectroscopy and symmetry-based theory

Homogeneous and inhomogeneous linewidth broadening of single polar GaN/AlN quantum dots

Linear polarized photoluminescence from GaN quantum dots imbedded in AlN matrix

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