Photoluminescence of three phonon replicas of the bound exciton in undoped InGaP prepared by liquid phase epitaxy

Abstract

Photoluminescence and Raman spectroscopies are employed to study undoped InGaP layers grown on GaAs (100) substrates at 750 °C by liquid phase epitaxy. There are four peaks in the photoluminescence spectrum in the energy range between 1.55 and 2.25 eV. Besides a bound exciton recombination, three longitudinal optical phonon replicas with one superimposed donor-acceptor emission are identified based upon their dependences of emission energies on temperature and excitation intensity.

Photoluminescence on ordered GaxIn1−xAsyP1−y

“…The PL bands observed at h c (A) ph ϭ1.734 eV ͑20 mW cm Ϫ2 ), h c (A) ph ϭ1.745 eV ͑20 W cm Ϫ2 ) and h c (A) 2ph ϭ1.698 eV ͑20 W cm Ϫ2 ) represent phonon sidebands of the transition ͑A͒ which are caused by the emission of one and two LO phonons, respectively (ប ph ϭ47.5 meV͒. [24][25][26] The peak energy and the linewidth variation of the band ͑A͒ versus the excitation density at 10 K are shown in Fig. 3͑b͒ in more detail.…”

Luminescence anisotropy of InGaP layers grown by liquid phase epitaxy

“…The strain dependence of the optical properties of disordered InGaP has been studied by spectroscopic ellipsometry [5]. At low temperatures, the excitonic PL emission of high purity InGaP films grown by LPE has been observed together with three additional peaks which have been identified as LO phonon replicas through analysis of the temperature dependences of PL [6].…”