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We investigate the dependence of the threshold current of broad-area lasers on the stripe width. A comparison of differently deep-etched devices fabricated from the same wafer reveals that the stripe width dependence of the threshold current is caused by the current spreading effect. We propose a simple method to obtain a transparency current density characterizing a particular epitaxial structure without being influenced by current spreading.

Composition and carrier-concentration dependence of the electronic structure of In y Ga 1 − y As 1 − x N x films with nitrogen mole fraction of less than 0.012