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Micro-Raman facet temperatures of high-power diode lasers with different waveguide architectures are compared. For regular operation conditions, the thermal behavior of "unaged" arrays emitting in the 808-nm wavelength region with different architectures is similar, however, with an increased load thermal behaviors differ significantly and exhibit failure events at facet temperatures typically between 150 and 450 deg C. From various experiments, among them facet temperature measurements for ultrahigh-power operation as well as by preparative failure analytics, we provide evidence that in arrays the front facets are significantly affected by device operation and influence the failure behavior of the whole high-power diode laser also in cases when the device failure is accompanied by dislocation creation inside the device

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We have investigated the effect of high-temperature annealing on device performance of GaInP/GaAs HBTs using a wide range of MOVPE growth parameters for the C-doped base layer. Carbon doping was achieved either via TMG and AsH 3 only or by using an extrinsic carbon source. High-temperature annealing causes degradation of carbon-doped GaAs in terms of minority carrier properties even at doping levels of p = 1 × 10 19 cm -3 . The measured reduction in electron lifetime and luminescence intensity correlates with HBT device results. It is shown that the critical temperature where material degradation starts is both a function of doping method and carbon concentration.