Gain spectra measurements by a variable stripe lengthmethod with current injection

Oster, A.; Erbert, G.; Wenzel, H.

doi:10.1049/el:19970605

Cited by 53 publications

(28 citation statements)

References 6 publications

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“…The spectral measurements therefore have to be done using a high resolution spectrometer in order to resolve the spectral modes and not to distort the observed contrast ratio and/or line width of the modes. Since such a high resolution spectrometer in the 1.60-1.80 µm wavelength region is not available to us we have used a measurement technique based on the analysis of ASE spectra from different lengths of amplifiers as described by (Oster et al 1997;Thomson et al 1999). By this method the gain can be calculated from the ASE spectra over a wide range of injection current densities.…”

Section: Gain Measurement Method Device Design and Fabricationmentioning

confidence: 99%

Measurement and analysis of optical gain spectra in 1.6 to 1.8 μm InAs/InP (100) quantum-dot amplifiers

et al. 2009

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Small signal modal gain measurements have been performed on two-section ridge waveguide InAs/InP (100) quantum-dot amplifiers that we have fabricated with a peak gain wavelength around 1.70 µm. The amplifier structure is suitable for monolithic active-passive integration, and the wavelength region and wide gain bandwidth are of interest for integrated devices in biophotonic applications. A 65 nm blue shift of the peak wavelength in the gain spectrum has been observed with an increase in injection current density from 1,000 to 3,000 A/cm 2 . The quantum-dot amplifier gain spectra have been analyzed using a quantum-dot rate-equation model that considers only the carrier dynamics. The comparison between measured and simulated spectra shows that two effects in the quantum-dot material introduce this large blue shift in the gain spectrum. The first effect is the carrier concentration dependent state filling with carriers of the bound excited and ground states in the dots. The second effect is the decrease in carrier escape time from the dots to the wetting layer with decreasing dot size.

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Section: Gain Measurement Method Device Design and Fabricationmentioning

confidence: 99%

Measurement and analysis of optical gain spectra in 1.6 to 1.8 μm InAs/InP (100) quantum-dot amplifiers

et al. 2009

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“…Modal gain spectra were studied 58 by the variable stripe length method with varying current injection following the technique described in Ref. 59. In this method modal gain spectra are extracted from the amplified spontaneous light emitted from the sample edge.…”

Section: Structure Designmentioning

confidence: 99%

GaAs-based 1.3 µm InGaAs quantum dot lasers: A status report

Maximov

Ledentsov

Ustinov

et al. 2000

Journal of Elec Materi

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“…Optical gain can be extracted from both ASE and TSE, as well as using some other methods, such as direct transmission measurement or variable stripe length (VSL) technique [5]. Direct transmission measurement may be advantageous when both facets are anti-reflection AR coated (mirror loss is very high) and Fabry-Perot contrast is very small.…”

Section: )mentioning

confidence: 99%

Advances in Measurements of Physical Parameters of Semiconductor Lasers

Shtengel¹,

Kazarinov²,

Belenky

et al. 1998

Int. J. Hi. Spe. Ele. Syst.

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We present a summary of advances in characterization techniques allowing for comprehensive study of physical processes in semiconductor lasers. 5. Electrical and optical measurements of RF modulation response below threshold. 5.1. Determination of the differential carrier lifetime from the device impedance. 5.2. Determination of the differential carrier lifetime from the optical response measurements. 6. Optical measurements of RF modulation response and RIN above threshold 6.1. Determination of the resonant frequency and damping factor using carrier subtraction technique. Determination of the differential gain and the gain compression coefficient. 6.2. Determination of the resonant frequency and differential gain from the RIN measurements. 7. Measurements of the linewidth enhancement factor. 7.1. Measurements of linewidth enhancement factorfrom ASE and TSE spectra. 8. Measurements of the carrier temperature and carrier heating in semiconductor lasers. 8.1. Determination of carrier heating from wavelength chirp and TSE measurements. 9. References.

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Gain spectra measurements by a variable stripe lengthmethod with current injection

Cited by 53 publications

References 6 publications

Measurement and analysis of optical gain spectra in 1.6 to 1.8 μm InAs/InP (100) quantum-dot amplifiers

Measurement and analysis of optical gain spectra in 1.6 to 1.8 μm InAs/InP (100) quantum-dot amplifiers

GaAs-based 1.3 µm InGaAs quantum dot lasers: A status report

Advances in Measurements of Physical Parameters of Semiconductor Lasers

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