2002
DOI: 10.1002/1521-3951(200201)229:1<317::aid-pssb317>3.0.co;2-s
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Photoluminescence of Yb Doped ZnTe

Abstract: The photoluminescence from ZnTe : Yb films grown on (100) GaAs by MBE was studied at different temperatures (4.2-350) K. The efficient Yb 3þ -related emission in ZnTe was observed up to room temperature. The analysis of the fine structure of the Yb luminescence spectra allowed us to suggest the energy level diagram of the crystal-field-split 4f 13 levels for the dominant complex center based on Yb ion. IntroductionThe basis of possible applications of RE-doped semiconductors such as light emitting devices is t… Show more

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Cited by 10 publications
(6 citation statements)
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“…Although the photoluminescence of doped ZnTe has been widely reported, with effective dopants including oxygen [14][15][16][17], cooper [18], ytterbium [19], arsenic [20], etc., luminescence with suitable intensity and spectral properties for powder-phosphor applications has not been achieved in ZnTe. This is attributed to its high moisture sensitivity and chemical instability during synthesis.…”
Section: Introductionmentioning
confidence: 99%
“…Although the photoluminescence of doped ZnTe has been widely reported, with effective dopants including oxygen [14][15][16][17], cooper [18], ytterbium [19], arsenic [20], etc., luminescence with suitable intensity and spectral properties for powder-phosphor applications has not been achieved in ZnTe. This is attributed to its high moisture sensitivity and chemical instability during synthesis.…”
Section: Introductionmentioning
confidence: 99%
“…However, little work has been reported on the synthesis of ZnTe for powder phosphor applications. Although the photoluminescence of doped ZnTe has been widely reported, [7][8][9][10][11][12][13] with effective dopants including oxygen, [7][8][9][10] copper, 11 ytterbium, 12 arsenic, 13 etc., luminescence with suitable intensity and spectral properties for powder phosphor applications has not been achieved in ZnTe. This is attributed to its high moisture sensitivity and chemical instability dur-a͒ Electronic mail: zhitao.kang@grti.gatech.edu b͒ Author to whom correspondence should be addressed; electronic mail: chris.summers@mse.gatech.edu 14 which produce deep level electronic defect states in the energy gap that can quench luminescence.…”
mentioning
confidence: 99%
“…[3][4][5][6] Also, ZnTe thin films have been fabricated by epitaxial growth techniques. [7][8][9][10] However, little work has been reported on the synthesis of efficient luminescent ZnTe for powder phosphor applications. The photoluminescence of doped ZnTe has been widely reported, 3,4,[8][9][10][11][12][13][14][15][16][17][18] with effective dopants including oxygen, 3,[11][12][13][14][15][16][17] copper, 4,18 ytterbium, 9 arsenic, 10 etc.…”
Section: Introductionmentioning
confidence: 99%