Photoluminescence probing of non-radiative channels in hydrogenated In(Ga)As/GaAs quantum dots

Saint-Girons, Guillaume; Lemaître, A.; Navarro-Paredes, V.; Patriarche, G.; Rao, V.; Sagnes, I.; Theys, B.

doi:10.1016/j.jcrysgro.2004.01.017

Cited by 3 publications

(2 citation statements)

References 15 publications

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“…In our samples, photocurrent could be measured only after H-plasma treatment. Hydrogenation is known to passivate defects in semiconductor materials [7][8][9]. The spectral photoresponse of the QDIP at T = 4.2 K is shown in Fig.…”

Section: Resultsmentioning

confidence: 99%

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Far-Infrared/THz Photodetector with Self-assembled Quantum Dots

Nam

Song

Choi³

et al. 2005

2005 International Topical Meeting on Microwave Photonics

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In this paper, we report 21 µ µ µ µm photoresponse with InAs/InGaAs/GaAs quantum-dot-in-awell photodetector structure. The self-assembled InAs quantum dots were grown on InGaAs/GaAs well structure via atomic layer molecular beam epitaxy and fabricated as intersubbamd photoconductive structure. The farinfrared/THz 21 µ µ µ µm photoresponse was measured at 4.2K. Photoresponses were observed over the range of λ λ λ λ = 3 µ µ µ µm to 25µ µ µ µm with peaks at 21, 15, 8 µ µ µ µm, respectively.Index Terms -Teraherz, quantum dot, photodetectors.

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Section: Resultsmentioning

confidence: 99%

“…The bottom contact was referenced as the ground. After all the device fabrication processes, the sample was exposed to hydrogen (H)-plasma to reduce the dark current [7][8][9].…”

Section: Device Structure and Fabricationmentioning

confidence: 99%

Far-Infrared/THz Photodetector with Self-assembled Quantum Dots

Nam

Song

Choi³

et al. 2005

2005 International Topical Meeting on Microwave Photonics

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show abstract

Radiation Effects in Quantum Dot Structures

Соболев

2008

Handbook of Self Assembled Semiconductor Nanostructures for Novel Devices in Photonics and Electronics

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Characterization of hydrogen passivated defects in strain-engineered semiconductor quantum dot structures

Gurioli

Zamfirescu

Vinattieri

et al. 2006

Journal of Applied Physics

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The effects of hydrogen incorporation on carrier relaxation and recombination efficiencies in a large series of InAs self-assembled quantum dot structures deposited on InGaAs lower confining layers with different thicknesses and compositions have been addressed. With increasing H dose we observe an improvement in the radiative efficiency. By comparing steady state and time resolved photoluminescence measurements, it is established that the H passivation does not enhance the relaxation and capture efficiencies, but instead directly improves the emission yield from carriers in the dots. We therefore conclude that the H-passivated defects are located nearby, or even inside, the dots.

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Photoluminescence probing of non-radiative channels in hydrogenated In(Ga)As/GaAs quantum dots

Cited by 3 publications

References 15 publications

Far-Infrared/THz Photodetector with Self-assembled Quantum Dots

Far-Infrared/THz Photodetector with Self-assembled Quantum Dots

Radiation Effects in Quantum Dot Structures

Characterization of hydrogen passivated defects in strain-engineered semiconductor quantum dot structures

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