Radiation Effects in Quantum Dot Structures

Соболев, Н. А.

doi:10.1016/b978-0-08-046325-4.00013-x

Cited by 10 publications

(11 citation statements)

References 396 publications

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“…When the grain size and the diffusion path of the radiation defects to interfaces are comparable one can expect very effective annihilation of the radiation defects and higher radiation resistance of a nanomaterial than that of its three-dimensional counterpart. The described difference in the radiation behavior of homogeneous 3D and nanostructured materials has been reported in a number of studies on radiation hardness of nanocrystalline materials of various compositions. , …”

Section: Electron and Neutron Irradiation Of Nanostructured Oxidesmentioning

confidence: 72%

“…It can penetrate a wide range of materials and deliver the required irradiating dose in a few seconds, and thus the entire process can take place in minutes with no chemical residuals or induced radioactivity remaining in the processed products. Irradiation with high-energy particles has been applied for the modification and synthesis of various materials, in particular, nanomaterials. , …”

Section: Introductionmentioning

confidence: 99%

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Electron and Neutron Beam Irradiation Effects in Homogeneous and Nanostructured Oxides

Nesheva

2023

ACS Omega

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Oxide-based materials have a variety of applications in chemical sensing and photocatalysis, thin-film transistors, complex-oxide field-effect transistors, nonvolatile memories, resistive switching, energy conversion, topological oxide electronics, and many others. The radiation resistance of these materials in such devices plays an important role in device operation in radiation environment, and this attracts much attention in the research area. In spite of damage in a number of cases high-energy particles may have a beneficial effect on the target. In this mini-review article examples of both creation of defects and beneficial changes in the structure and properties of homogeneous and nanostructured oxides caused by high-energy electron and neutron irradiation are given by considering some recently published results. First, the attention is turned to ionizing and displacement effects of electron and neutron irradiation in homogeneous bulk and thin-film oxides reported in the literature. Then, the effect of electron and neutron irradiation on nanostructured oxides and semiconductor nanoparticles embedded in an oxide matrix is regarded. Considerable attention is paid to silicon oxide layers since they are widely used in microelectronic products, which are among the most manufactured devices in human history. Processes of irradiation-induced lattice rearrangement, compositional changes, growth of nanoparticles and their size reduction, creation of point defects and their complexes, electron−hole generation, and charge trapping are discussed.

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Section: Electron and Neutron Irradiation Of Nanostructured Oxidesmentioning

confidence: 72%

Section: Introductionmentioning

confidence: 99%

Electron and Neutron Beam Irradiation Effects in Homogeneous and Nanostructured Oxides

Nesheva

2023

ACS Omega

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“…The InAs layer thickness for all the samples was around 2 ML which has been demonstrated to be the optimal value for similar material systems [9]. Sample A is an undoped InAs/GaAs quantum dots, while samples B and C include an ntype doping profile within the quantum dots of 8x10 10 cm -2 and 16x10 10 cm -2 respectively.…”

Section: Structural Detailsmentioning

confidence: 98%

Variable temperature photocurrent characterization of quantum dots intermediate band photovoltaic devices

et al. 2014

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The key issue for enhancing the efficiency of semiconductor photovoltaic material devices is to reduce point defects recombination phenomena and to extend the absorption wavelength range. By inserting InAs Quantum Dots in a host GaAs semiconductor structure, new energy levels can be generated resulting in wavelength absorption enhancement. Thus, the main objective of this work was to design a material based on GaAs host semiconductor with extended absorption wavelength in the infrared region. We extend our previous characterisation of GaAs/InAs material systems by studying variable temperature photocurrent spectroscopy from 300K down to 50K in order to study the effect of different inter-dot doping profiles on cell efficiency.

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“…All these structures are summarised in Table 1. The QD layer thickness is critical for the material's performance, the optimal value was found to be around 2 ML [16].…”

Section: Structure Detailsmentioning

confidence: 99%

Characterisation of InAs/GaAs quantum dots intermediate band photovoltaic devices

Garduño-Nolasco

Carrington²,

Krier³

et al. 2014

IET Optoelectronics

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Radiation Effects in Quantum Dot Structures

Cited by 10 publications

References 396 publications

Electron and Neutron Beam Irradiation Effects in Homogeneous and Nanostructured Oxides

Electron and Neutron Beam Irradiation Effects in Homogeneous and Nanostructured Oxides

Variable temperature photocurrent characterization of quantum dots intermediate band photovoltaic devices

Characterisation of InAs/GaAs quantum dots intermediate band photovoltaic devices

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