Photoluminescence properties of crystallized strontium aluminate thin films prepared by ion-beam evaporation

Suematsu, Hisayuki; Sengiku, M.; Kato, Keizo; Mitome, Masanori; Kimoto, Koji; Matsui, Y.; Jiang, Weihua; Yatsui, Kiyoshi

doi:10.1016/s0040-6090(02)00027-5

Cited by 26 publications

(21 citation statements)

References 7 publications

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“…[1][2][3] Over the past few years, there has been significant interest in the growth and characterization of SAOE thin films due to their potential applications in display devices, temperature sensors, and other devices. [2][3][4][5] Recent research has shown that SAOE exhibits the interesting phenomenon of triboluminescence ͑Tribo-L͒ and/or mechanoluminescence ͑ML͒, which has been extensively investigated by Xu and co-workers.…”

Section: Sral 2 Omentioning

confidence: 99%

Triboluminescence Properties of Highly Oriented SrAl[sub 2]O[sub 4]:Eu Films on Inconel 600 Substrate

Fu¹,

Yamada²,

Xu³

2008

Electrochem. Solid-State Lett.

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We successfully prepared highly oriented SrAl 2 O 4 :Eu ͑SAOE͒ films with different thicknesses on Inconel 600 substrates by radio frequency ͑rf͒ sputtering. The prepared films showed a preferred orientation of ͑0 3 1͒. The uniformity of the growth orientation was not degraded even though the films were more than 10 m thick. At the same time, all the films showed good adhesion on the substrate, as no peeling was observed after each triboluminescence measurement. When friction was applied, a strong green triboluminescence was observed, which suggests that SAOE films can be used as sensors to detect stress in an object.SrAl 2 O 4 :Eu ͑SAOE͒ is a well-known green phosphor with long afterglow characteristics. 1-3 Over the past few years, there has been significant interest in the growth and characterization of SAOE thin films due to their potential applications in display devices, temperature sensors, and other devices. 2-5 Recent research has shown that SAOE exhibits the interesting phenomenon of triboluminescence ͑Tribo-L͒ and/or mechanoluminescence ͑ML͒, which has been extensively investigated by Xu and co-workers. 6-8 Tribo-L is light emission caused by mechanical stimuli such as friction, scratching, cutting, collision, striking, and grinding. 6 This phenomenon can be used to detect mechanical stress by converting mechanical energy into visible light energy and has various widespread applications such as the fabrication of Tribo-L devices, the forecasting of earthquakes, and the predetection of sudden fractures in ceramic construction. 9,10 Currently, yellow Tribo-L films of ZnS deposited on glass substrates have been successfully prepared. 11,12 For developing and improving the Tribo-L sensors, it is necessary to develop other Tribo-L films with high intensity and more colors. Of the ML materials recently developed, including SAOE, 6-10

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Section: Sral 2 Omentioning

confidence: 99%

Triboluminescence Properties of Highly Oriented SrAl[sub 2]O[sub 4]:Eu Films on Inconel 600 Substrate

Fu¹,

Yamada²,

Xu³

2008

Electrochem. Solid-State Lett.

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“…Recent research, however, indicates that SAOE possesses mechanoluminescent (ML) properties, which have been comprehensively investigated by the Xu group [11][12][13][14]. Among the examined ML materials SAOE is one of the most intense and we believe that SAOE film is a promising candidate for novel application as, for example, mechanooptical devices and triboluminescence skin sensors [15].…”

Section: Introductionmentioning

confidence: 99%

Preparation and characterization of fiber-textured SrAl2O4:Eu films grown using a homo-buffer layer

Yamada

Nishikubo

et al. 2008

Journal of Crystal Growth

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“…[1][2][3][4][5][6][7][8][9][10][11][12] In fact, many sulfide and oxide thin-film phosphors have been developed for use in inorganic electroluminescent devices. Thin-film phosphors have advantages over powders in terms of their superior adhesion properties, high image resolution, good heat resistance, reduced outgassing, and long-term stability.…”

mentioning

confidence: 99%

Luminescence from Pulsed-Laser-Deposited (Sr[sub 0.7]Ba[sub 0.3])[sub 2]SiO[sub 4]:Eu[sup 2+] Thin-Film Phosphors

Kwak

Jung

Shin

et al. 2008

Electrochem. Solid-State Lett.

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Thin-film ͑Sr,Ba͒ 2 SiO 4 :Eu 2+ phosphors were pulsed-laser deposited on quartz glass, sapphire, and Si wafers. The processing conditions were optimized to reduce substrate temperature during deposition and also to avoid high-temperature postdeposition annealing and reduction. In this study, the maximum processing temperature was reduced to 700°C, which must be lowered even further to produce on-chip phosphor films. The exact composition of the film obtained under the optimum processing conditions was identified by Rietveld refinement analysis, and two-peak emission behavior was investigated based on the exact structure.Thin-film phosphors have drawn considerable attention in an attempt to apply them to various display applications. 1-12 In fact, many sulfide and oxide thin-film phosphors have been developed for use in inorganic electroluminescent devices. Thin-film phosphors have advantages over powders in terms of their superior adhesion properties, high image resolution, good heat resistance, reduced outgassing, and long-term stability. In this regard, various deposition techniques have been employed in the production of thin-film phosphors, including radio frequency ͑rf͒ sputtering, pulsed laser deposition ͑PLD͒, pulsed electron-beam evaporation, and even sol-gel spin coating or spray pyrolysis. 1-12 In particular, thin-film phosphors developed by PLD are of great interest. 1-4 In addition to display applications, thin-film phosphors have been investigated for use in light-emitting diodes ͑LEDs͒. The preferred LED phosphor, Y 3 Al 5 O 12 :Ce 3+ ͑YAG͒ and its variants, already has been successfully developed in a thin-film form using rf magnetron sputtering and PLD techniques. 13,14 The YAG:Ce thin-film phosphors deposited by these techniques require high-temperature processing, either during or after the deposition. For example, at least 1200°C annealing after film deposition is required to achieve a complete crystallization of the YAG:Ce thin films. When the combination of thin-film YAG:Ce phosphors with InGaN chips is the object, breakdown of the InGaN chip at such high temperatures must be avoided.͑Sr,Ba͒ 2 SiO 4 :Eu 2+ phosphors, the luminance and color chromaticity of which are comparable to those of the YAG:Ce phosphor at blue LED excitations, 14-19 have attracted considerable attention for use in white-light-emitting diodes ͑WLEDs͒. Another merit of these phosphors is the ability to tune the emission peak by varying the Sr/Ba ratio. Despite their practical development in the powder form, there has been no attempt to achieve thin-film type ͑Sr,Ba͒ 2 SiO 4 :Eu 2+ phosphors. Our ultimate goal is to develop thinfilm ͑Sr,Ba͒ 2 SiO 4 :Eu 2+ phosphors with a processing temperature that can be lowered in the production of on-chip phosphor films, thereby avoiding breakdown of the InGaN chip. In this study we were not able to secure a processing temperature low enough to avoid InGaN chip breakdown. However, by lowering the maximum processing temperature ͑substrate temperature͒ as low as 700°C and by skipping th...

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Photoluminescence properties of crystallized strontium aluminate thin films prepared by ion-beam evaporation

Cited by 26 publications

References 7 publications

Triboluminescence Properties of Highly Oriented SrAl[sub 2]O[sub 4]:Eu Films on Inconel 600 Substrate

Triboluminescence Properties of Highly Oriented SrAl[sub 2]O[sub 4]:Eu Films on Inconel 600 Substrate

Preparation and characterization of fiber-textured SrAl2O4:Eu films grown using a homo-buffer layer

Luminescence from Pulsed-Laser-Deposited (Sr[sub 0.7]Ba[sub 0.3])[sub 2]SiO[sub 4]:Eu[sup 2+] Thin-Film Phosphors

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