Photoluminescence properties of cuprous phosphide prepared through phosphating copper with a native oxide layer

Abstract

The presence of cuprous oxide results in band bending at the interface between cuprous phosphide and cuprous oxide, forming carrier traps, which improves the fluorescence properties of cuprous phosphide.

Chemical Vapor Deposition and Thermal Oxidation of Cuprous Phosphide Nanofilm

“…Therefore, the frequency difference cannot be utilized to determine the thickness of Cu 3 P film. The Raman peaks of bulk Cu 3 P are centered at 273 and 607 cm −1 , respectively [9]. Compared with the bulk material, peak positions of Cu 3 P nanofilm shift and the frequency difference increases, which indicates the existence of the lattice defects and disorder [29,30].…”

“…The peak at 524.5 cm −1 is corresponding to silicon [25,26], which was used to calibrate the peak position. There are two peaks centred at 253 and 632 cm −1 , which are due to Cu 3 P [9,27]. The frequency difference between the two peaks is constant, unlike Van Der Waals two-dimensional materials, such as graphene, hexagonal boron nitride and molybdenum sulfide, of which the frequency difference is a function of the film thickness [28].…”

“…680 nm. We had discussed the photoluminescence behavior of Cu 3 P in the presence of copper oxide in our previous work [9]. Cuprous phosphide is a direct band gap semiconductor with a band gap of ca.…”

“…To facilitate the study of thermal stability, Cu 3 P film with thickness of ca. 2.7 µm was prepared by the reaction between copper foil and sodium hypophosphite according to the reference [9,23,24]. Sodium hypophosphite (Aladdin, Shanghai, China, 99.5%, 0.05 mol) was first placedin a corundum crucible covered with copper foil (Aladdin, Shanghai, China, 99.9%) with a size of 1 cm × 1 cm × 250 µm.…”

“…Copper compounds generally show ptype properties, such as cuprous oxide, cuprous sulfide and cuprous halide [5][6][7], and cuprous phosphide (Cu 3 P) is one of them. Cuprous phosphide is a p-type, narrow band gap semiconductor with an energy gap of about 1.6 eV [8][9][10][11], which is of potential applications in light-emitting diodes, photodetectors, sensors and catalysis [12][13][14][15][16][17][18]. The morphologies of cuprous phosphide reported are usually thick film or nanosheets.…”